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FDS4559-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs Publish 0.1.0 · Ray 29d ago
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fds4559-hxy-etched.glb fds4559-hxy: factory component page (tier=lcsc) · Ray 29d ago
fds4559-hxy-etched.step fds4559-hxy: factory component page (tier=lcsc) · Ray 29d ago
fds4559-hxy-hero.glb fds4559-hxy: hero GLB from the etched model (keeps the MPN mark) · Ray 29d ago
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fds4559-hxy.glb Publish 0.1.0 · Ray 29d ago
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fds4559-hxy.step Publish 0.1.0 · Ray 29d ago
package.json Publish 0.1.0 · Ray 29d ago
page.json fds4559-hxy: specified limits as data (metadata.characteristics, 38 rows from the datasheet) · Ray 24d ago
README.md fds4559-hxy: specified limits as data (metadata.characteristics, 38 rows from the datasheet) · Ray 24d ago

FDS4559-HXY

HXY MOSFET · MOSFETs · SOP-8

FDS4559-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1; the N-channel device is rated VDS 60V, ID 6A, with RDS(ON) below 48mΩ at VGS=10V.
2 G1 input Gate of MOSFET 1, rated ±20V VGS maximum, with a threshold of 1.0 to 2.5V for the N-channel device.
3 S2 passive Source of MOSFET 2; the P-channel device is rated VDS -60V, ID -5A, with RDS(ON) below 85mΩ at VGS=-10V.
4 G2 input Gate of MOSFET 2, rated ±20V VGS maximum, with a threshold of -1.0 to -2.5V for the P-channel device.
5 D2 passive Drain of MOSFET 2, rated VDS -60V and ID -5A at TA=25℃; pins 5 and 6 are both D2.
6 D2 passive Drain of MOSFET 2, tied to pin 5 and rated VDS -60V, with a pulsed drain current IDM of -8.5A.
7 D1 passive Drain of MOSFET 1, rated VDS 60V and ID 6A at TA=25℃; pins 7 and 8 are both D1.
8 D1 passive Drain of MOSFET 1, tied to pin 7 and rated VDS 60V, with a pulsed drain current IDM of 11A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-Channel Drain-Source Voltage VDS 60 V TC=25℃ unless otherwise noted 1
P-Channel Drain-Source Voltage VDS -60 V TC=25℃ unless otherwise noted 1
N-Channel Gate-Source Voltage VGS -20 20 V TC=25℃ unless otherwise noted 1
P-Channel Gate-Source Voltage VGS -20 20 V TC=25℃ unless otherwise noted 1
N-Channel Continuous Drain Current ID@TA=25℃ 6 A VGS @ 10V 1
P-Channel Continuous Drain Current ID@TA=25℃ -5 A VGS @ 10V 1
N-Channel Continuous Drain Current ID@TA=70℃ 4 A VGS @ 10V 1
P-Channel Continuous Drain Current ID@TA=70℃ -3.5 A VGS @ 10V 1
N-Channel Pulsed Drain Current IDM 11 A TC=25℃ unless otherwise noted 1
P-Channel Pulsed Drain Current IDM -8.5 A TC=25℃ unless otherwise noted 1
N-Channel Single Pulse Avalanche Energy EAS 22.5 mJ 1
P-Channel Single Pulse Avalanche Energy EAS 35.3 mJ 1
N-Channel Avalanche Current IAS 22.6 A TC=25℃ unless otherwise noted 1
P-Channel Avalanche Current IAS -26.6 A TC=25℃ unless otherwise noted 1
N-Channel Total Power Dissipation PD@TA=25℃ 2.5 W TA=25℃ 1
P-Channel Total Power Dissipation PD@TA=25℃ 2.5 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 85 ℃/W 1
Thermal Resistance Junction-Case RθJC 62.5 ℃/W 1
N-Channel Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS=0V, ID=250μA 2
N-Channel Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V, VGS = 0V 2
N-Channel Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS = ±20V 2
N-Channel Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VDS=VGS, ID=250μA 2
N-Channel Static Drain-Source on-Resistance RDS(on) 40 48 mΩ VGS=10V, ID=5A 2
N-Channel Static Drain-Source on-Resistance RDS(on) 48 60 mΩ VGS=4.5V, ID=3A 2
N-Channel Maximum Continuous Drain to Source Diode Forward Current IS 6 A 2
N-Channel Maximum Pulsed Drain to Source Diode Forward Current ISM 20 A 2
N-Channel Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=5A 2
P-Channel Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250uA 3
P-Channel Static Drain-Source On-Resistance RDS(ON) 70 100 mΩ VGS=-10V, ID=-3.5A 3
P-Channel Static Drain-Source On-Resistance RDS(ON) 100 115 mΩ VGS=-4.5V, ID=-3.1A 3
P-Channel Gate Threshold Voltage VGS(th) -2.5 -1 V VGS=VDS, ID=-250uA 3
P-Channel Drain-Source Leakage Current (TJ=25℃) IDSS 1 uA VDS=-48V, VGS=0V, TJ=25℃ 3
P-Channel Drain-Source Leakage Current (TJ=55℃) IDSS 5 uA VDS=-48V, VGS=0V, TJ=55℃ 3
P-Channel Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 3
P-Channel Continuous Source Current IS -6 A VG=VD=0V, Force Current 3
P-Channel Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 3

CAD (KiCad official)

  • Symbol: FDS4559-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: fds4559-hxy-etched.step / fds4559-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fds4559-hxy.step / fds4559-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (9 pp, sha256 a601d73b26192a6c, retrieved 2026-10-10, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF