# FDS4465

**onsemi** · MOSFETs · SO-8

FDS4465 from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; pin 1 is marked on the package outline, and the absolute maximum VDSS is −20 V. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, with the absolute maximum drain-to-source voltage VDSS of −20 V. |
| 3 | S | passive | Source terminal of the P-channel MOSFET, with the absolute maximum drain-to-source voltage VDSS of −20 V. |
| 4 | G | input | Gate terminal of the MOSFET; the absolute maximum gate-to-source voltage VGSS is ±8 V. |
| 5 | D | passive | Drain terminal of the MOSFET; the drain pins form the solder mounting surface referenced for thermal resistance, and continuous drain current is −13.5 A. |
| 6 | D | passive | Drain terminal of the MOSFET; the drain pins form the solder mounting surface referenced for thermal resistance, and continuous drain current is −13.5 A. |
| 7 | D | passive | Drain terminal of the MOSFET; the drain pins form the solder mounting surface referenced for thermal resistance, and continuous drain current is −13.5 A. |
| 8 | D | passive | Drain terminal of the MOSFET; the drain pins form the solder mounting surface referenced for thermal resistance, and continuous drain current is −13.5 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain−to−Source Voltage | VDSS |  |  | -20 | V |  | 1 |
| Gate−to−Source Voltage | VGSS | -8 |  | 8 | V |  | 1 |
| Drain Current Continuous | ID |  |  | -13.5 | A | Note 1a | 1 |
| Drain Current Pulsed | ID |  |  | -50 | A | Pulsed | 1 |
| Power Dissipation | PD |  |  | 2.5 | W | Note 1a | 1 |
| Power Dissipation | PD |  |  | 1.5 | W | Note 1b | 1 |
| Power Dissipation | PD |  |  | 1.2 | W | Note 1c | 1 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 |  | 175 | °C |  | 1 |
| Thermal Resistance, Junction−to−Ambient | RJA |  |  | 50 | °C/W | Note 1a: 1 in2 pad of 2 oz copper | 1 |
| Thermal Resistance, Junction−to−Ambient | RJA |  |  | 125 | °C/W | Note 1c: minimum pad | 1 |
| Thermal Resistance, Junction−to−Ambient | RJC |  |  | 25 | °C/W | Note 1 | 1 |
| Drain−Source Breakdown Voltage | BVDSS | -20 |  |  | V | VGS = 0 V, ID = 250 µA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS = −16 V, VGS = 0 V | 2 |
| Gate-Body Leakage, Forward | IGSSF |  |  | 100 | nA | VGS = 8 V, VDS = 0 V | 2 |
| Gate-Body Leakage, Reverse | IGSSR |  |  | -100 | nA | VGS = −8 V, VDS = 0 V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.6 | -1.5 | V | VDS = VGS, ID = 250 µA | 2 |
| Static Drain−Source On−Resistance | RDS(on) |  | 6.7 | 8.5 | mΩ | VGS = −4.5 V, ID = −13.5 A | 2 |
| Static Drain−Source On−Resistance | RDS(on) |  | 8 | 10.5 | mΩ | VGS = −2.5 V, ID = −12 A | 2 |
| Static Drain−Source On−Resistance | RDS(on) |  | 9.8 | 14 | mΩ | VGS = −1.8 V, ID = −10.5 A | 2 |
| Static Drain−Source On−Resistance | RDS(on) |  | 9 | 13 | mΩ | VGS = −4.5 V, ID = −13.5 A, TJ = 125°C | 2 |
| On-State Drain Current | ID(on) | -50 |  |  | A | VGS = −4.5 V, VDS = −5 V | 2 |
| Gate Resistance | Rg | 0.1 | 3 | 6 | Ω |  | 2 |
| Turn-On Delay Time | td(on) |  | 20 | 36 | ns | VDD = −10 V, ID = −1 A, VGS = −4.5 V, RGEN = 6 Ω | 2 |
| Turn-On Rise Time | tr |  | 24 | 38 | ns | VDD = −10 V, ID = −1 A, VGS = −4.5 V, RGEN = 6 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 300 | 480 | ns | VDD = −10 V, ID = −1 A, VGS = −4.5 V, RGEN = 6 Ω | 2 |
| Turn-Off Fall Time | tf |  | 140 | 224 | ns | VDD = −10 V, ID = −1 A, VGS = −4.5 V, RGEN = 6 Ω | 2 |
| Total Gate Charge | Qg |  | 86 | 120 | nC | VDS = −10 V, ID = −1 A, VGS = −4.5 V | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | -2.1 | A |  | 2 |
| Drain-Source Diode Forward Voltage | VSD |  | -0.6 | -1.2 | V | VGS = 0 V, IS = −2.1 A (Note 2) | 2 |

## CAD (KiCad official)

- Symbol: `FDS4465`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `fds4465-etched.step` / `fds4465-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fds4465.step` / `fds4465.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588918015031726080) (7 pp, sha256 `c85502aa2fa42017`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fds4465-datasheet.pdf)