component
FDS4465
Public Made by Adomby adom
onsemi MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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README.mdadded+80@@ -0,0 +1,80 @@+# FDS4465++**onsemi** · MOSFETs · SO-8++FDS4465 from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | S | passive | Source terminal of the P-channel MOSFET; pin 1 is marked on the package outline, and the absolute maximum VDSS is −20 V. |+| 2 | S | passive | Source terminal of the P-channel MOSFET, with the absolute maximum drain-to-source voltage VDSS of −20 V. |+| 3 | S | passive | Source terminal of the P-channel MOSFET, with the absolute maximum drain-to-source voltage VDSS of −20 V. |+| 4 | G | input | Gate terminal of the MOSFET; the absolute maximum gate-to-source voltage VGSS is ±8 V. |+| 5 | D | passive | Drain terminal of the MOSFET; the drain pins form the solder mounting surface referenced for thermal resistance, and continuous drain current is −13.5 A. |+| 6 | D | passive | Drain terminal of the MOSFET; the drain pins form the solder mounting surface referenced for thermal resistance, and continuous drain current is −13.5 A. |+| 7 | D | passive | Drain terminal of the MOSFET; the drain pins form the solder mounting surface referenced for thermal resistance, and continuous drain current is −13.5 A. |+| 8 | D | passive | Drain terminal of the MOSFET; the drain pins form the solder mounting surface referenced for thermal resistance, and continuous drain current is −13.5 A. |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | onsemi |+| Package | SO-8 |+| Category | Transistors/Thyristors |+| Pins | 8 |++## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain−to−Source Voltage | VDSS | | | -20 | V | | 1 |+| Gate−to−Source Voltage | VGSS | -8 | | 8 | V | | 1 |+| Drain Current Continuous | ID | | | -13.5 | A | Note 1a | 1 |+| Drain Current Pulsed | ID | | | -50 | A | Pulsed | 1 |+| Power Dissipation | PD | | | 2.5 | W | Note 1a | 1 |+| Power Dissipation | PD | | | 1.5 | W | Note 1b | 1 |+| Power Dissipation | PD | | | 1.2 | W | Note 1c | 1 |+| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 1 |+| Thermal Resistance, Junction−to−Ambient | RJA | | | 50 | °C/W | Note 1a: 1 in2 pad of 2 oz copper | 1 |+| Thermal Resistance, Junction−to−Ambient | RJA | | | 125 | °C/W | Note 1c: minimum pad | 1 |+| Thermal Resistance, Junction−to−Ambient | RJC | | | 25 | °C/W | Note 1 | 1 |+| Drain−Source Breakdown Voltage | BVDSS | -20 | | | V | VGS = 0 V, ID = 250 µA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS = −16 V, VGS = 0 V | 2 |+| Gate-Body Leakage, Forward | IGSSF | | | 100 | nA | VGS = 8 V, VDS = 0 V | 2 |+| Gate-Body Leakage, Reverse | IGSSR | | | -100 | nA | VGS = −8 V, VDS = 0 V | 2 |+| Gate Threshold Voltage | VGS(th) | -0.4 | -0.6 | -1.5 | V | VDS = VGS, ID = 250 µA | 2 |+| Static Drain−Source On−Resistance | RDS(on) | | 6.7 | 8.5 | mΩ | VGS = −4.5 V, ID = −13.5 A | 2 |+| Static Drain−Source On−Resistance | RDS(on) | | 8 | 10.5 | mΩ | VGS = −2.5 V, ID = −12 A | 2 |+| Static Drain−Source On−Resistance | RDS(on) | | 9.8 | 14 | mΩ | VGS = −1.8 V, ID = −10.5 A | 2 |+| Static Drain−Source On−Resistance | RDS(on) | | 9 | 13 | mΩ | VGS = −4.5 V, ID = −13.5 A, TJ = 125°C | 2 |+| On-State Drain Current | ID(on) | -50 | | | A | VGS = −4.5 V, VDS = −5 V | 2 |+| Gate Resistance | Rg | 0.1 | 3 | 6 | Ω | | 2 |+| Turn-On Delay Time | td(on) | | 20 | 36 | ns | VDD = −10 V, ID = −1 A, VGS = −4.5 V, RGEN = 6 Ω | 2 |+| Turn-On Rise Time | tr | | 24 | 38 | ns | VDD = −10 V, ID = −1 A, VGS = −4.5 V, RGEN = 6 Ω | 2 |+| Turn-Off Delay Time | td(off) | | 300 | 480 | ns | VDD = −10 V, ID = −1 A, VGS = −4.5 V, RGEN = 6 Ω | 2 |+| Turn-Off Fall Time | tf | | 140 | 224 | ns | VDD = −10 V, ID = −1 A, VGS = −4.5 V, RGEN = 6 Ω | 2 |+| Total Gate Charge | Qg | | 86 | 120 | nC | VDS = −10 V, ID = −1 A, VGS = −4.5 V | 2 |+| Maximum Continuous Drain-Source Diode Forward Current | IS | | | -2.1 | A | | 2 |+| Drain-Source Diode Forward Voltage | VSD | | -0.6 | -1.2 | V | VGS = 0 V, IS = −2.1 A (Note 2) | 2 |++## CAD (KiCad official)++- Symbol: `FDS4465`+- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`+- 3D model: SO-8 (KiCad packages3D, STEP)+- 3D model files: `fds4465-etched.step` / `fds4465-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fds4465.step` / `fds4465.glb` are the bare package body.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588918015031726080) (7 pp, sha256 `c85502aa2fa42017`, retrieved 2026-10-20, tier: lcsc)+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/fds4465-datasheet.pdf)
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