component
FDS4465
Public Made by Adomby adom
onsemi MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownFDS4465
onsemi · MOSFETs · SO-8
FDS4465 from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; pin 1 is marked on the package outline, and the absolute maximum VDSS is −20 V. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, with the absolute maximum drain-to-source voltage VDSS of −20 V. |
| 3 | S | passive | Source terminal of the P-channel MOSFET, with the absolute maximum drain-to-source voltage VDSS of −20 V. |
| 4 | G | input | Gate terminal of the MOSFET; the absolute maximum gate-to-source voltage VGSS is ±8 V. |
| 5 | D | passive | Drain terminal of the MOSFET; the drain pins form the solder mounting surface referenced for thermal resistance, and continuous drain current is −13.5 A. |
| 6 | D | passive | Drain terminal of the MOSFET; the drain pins form the solder mounting surface referenced for thermal resistance, and continuous drain current is −13.5 A. |
| 7 | D | passive | Drain terminal of the MOSFET; the drain pins form the solder mounting surface referenced for thermal resistance, and continuous drain current is −13.5 A. |
| 8 | D | passive | Drain terminal of the MOSFET; the drain pins form the solder mounting surface referenced for thermal resistance, and continuous drain current is −13.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain−to−Source Voltage | VDSS | -20 | V | 1 | |||
| Gate−to−Source Voltage | VGSS | -8 | 8 | V | 1 | ||
| Drain Current Continuous | ID | -13.5 | A | Note 1a | 1 | ||
| Drain Current Pulsed | ID | -50 | A | Pulsed | 1 | ||
| Power Dissipation | PD | 2.5 | W | Note 1a | 1 | ||
| Power Dissipation | PD | 1.5 | W | Note 1b | 1 | ||
| Power Dissipation | PD | 1.2 | W | Note 1c | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Thermal Resistance, Junction−to−Ambient | RJA | 50 | °C/W | Note 1a: 1 in2 pad of 2 oz copper | 1 | ||
| Thermal Resistance, Junction−to−Ambient | RJA | 125 | °C/W | Note 1c: minimum pad | 1 | ||
| Thermal Resistance, Junction−to−Ambient | RJC | 25 | °C/W | Note 1 | 1 | ||
| Drain−Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = −16 V, VGS = 0 V | 2 | ||
| Gate-Body Leakage, Forward | IGSSF | 100 | nA | VGS = 8 V, VDS = 0 V | 2 | ||
| Gate-Body Leakage, Reverse | IGSSR | -100 | nA | VGS = −8 V, VDS = 0 V | 2 | ||
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.6 | -1.5 | V | VDS = VGS, ID = 250 µA | 2 |
| Static Drain−Source On−Resistance | RDS(on) | 6.7 | 8.5 | mΩ | VGS = −4.5 V, ID = −13.5 A | 2 | |
| Static Drain−Source On−Resistance | RDS(on) | 8 | 10.5 | mΩ | VGS = −2.5 V, ID = −12 A | 2 | |
| Static Drain−Source On−Resistance | RDS(on) | 9.8 | 14 | mΩ | VGS = −1.8 V, ID = −10.5 A | 2 | |
| Static Drain−Source On−Resistance | RDS(on) | 9 | 13 | mΩ | VGS = −4.5 V, ID = −13.5 A, TJ = 125°C | 2 | |
| On-State Drain Current | ID(on) | -50 | A | VGS = −4.5 V, VDS = −5 V | 2 | ||
| Gate Resistance | Rg | 0.1 | 3 | 6 | Ω | 2 | |
| Turn-On Delay Time | td(on) | 20 | 36 | ns | VDD = −10 V, ID = −1 A, VGS = −4.5 V, RGEN = 6 Ω | 2 | |
| Turn-On Rise Time | tr | 24 | 38 | ns | VDD = −10 V, ID = −1 A, VGS = −4.5 V, RGEN = 6 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 300 | 480 | ns | VDD = −10 V, ID = −1 A, VGS = −4.5 V, RGEN = 6 Ω | 2 | |
| Turn-Off Fall Time | tf | 140 | 224 | ns | VDD = −10 V, ID = −1 A, VGS = −4.5 V, RGEN = 6 Ω | 2 | |
| Total Gate Charge | Qg | 86 | 120 | nC | VDS = −10 V, ID = −1 A, VGS = −4.5 V | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | -2.1 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | -0.6 | -1.2 | V | VGS = 0 V, IS = −2.1 A (Note 2) | 2 |
CAD (KiCad official)
- Symbol:
FDS4465 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
fds4465-etched.step/fds4465-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fds4465.step/fds4465.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
c85502aa2fa42017, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).