component
FDC6321C
Public Made by Adomby adom
onsemi MOSFETs, TSOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
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{
"slug": "fdc6321c",
"version": "0.1.0",
"type": "component",
"description": "onsemi MOSFETs, TSOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"tags": [
"component",
"transistors-thyristors",
"fdc6321c",
"factory-2.0.0",
"extractor-text"
],
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
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"README.md",
"fdc6321c.kicad_sym",
"fdc6321c.kicad_mod",
"fdc6321c.glb",
"fdc6321c.step",
"fdc6321c.lbr",
"docs/hero.png",
"docs/fdc6321c-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"fdc6321c-hero.glb",
"fdc6321c-hero.overlay.json",
"fdc6321c-etched.glb"
],
"component": {
"mpn": "FDC6321C",
"manufacturer": "onsemi",
"package": "TSOT-23-6",
"pin_count": 6,
"category": "Transistors/Thyristors",
"subcategory": "MOSFETs",
"datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589986053164728320",
"parts": {
"symbol": "fdc6321c.kicad_sym",
"footprint": "fdc6321c.kicad_mod",
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"model_3d_plain": "fdc6321c-etched.glb",
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"model_3d_step_plain": "fdc6321c.step",
"lbr": "fdc6321c.lbr"
},
"distributor_links": {
"lcsc": "C890873"
},
"distributor_check": {
"checked_at": "2026-10-18T15:07:20Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "quota"
},
"mouser": {
"pn": null,
"status": "quota"
}
},
"pins": [
{
"number": "1",
"name": "G1",
"type": "input",
"description": "Gate of the N-channel FET (channel 1), logic level with VGS(th) < 1.0 V and absolute maximum VGSS of 8 V."
},
{
"number": "2",
"name": "S2",
"type": "passive",
"description": "Source of the P-channel FET (channel 2), rated at -25 V VDSS and -0.46 A continuous drain current."
},
{
"number": "3",
"name": "G2",
"type": "input",
"description": "Gate of the P-channel FET (channel 2), logic level with absolute maximum VGSS of -8 V."
},
{
"number": "4",
"name": "D2",
"type": "passive",
"description": "Drain of the P-channel FET (channel 2), rated at -25 V VDSS and -0.46 A continuous drain current."
},
{
"number": "5",
"name": "S1",
"type": "passive",
"description": "Source of the N-channel FET (channel 1), rated at 25 V VDSS and 0.68 A continuous drain current."
},
{
"number": "6",
"name": "D1",
"type": "passive",
"description": "Drain of the N-channel FET (channel 1), rated at 25 V VDSS and 0.68 A continuous drain current."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-sonnet-5-5",
"primary_mode": "text+vision",
"consensus_model": "claude-opus-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: Pin-to-function mapping was inferred from the 3D package view (front row G1, S2, G2; back row D1, S1; N-channel is labeled channel 1 (G1/S1/D1) and P-channel channel 2 (G2/S2/D2). The text does not stat",
"vision extraction: provenance cannot be text-verified; needs consensus"
],
"pages_sent": 10,
"cost_usd": 0.1877,
"at": "2026-10-18T15:07:05"
},
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"pages": 10,
"sha256": "8df6fe4bc82d1622",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 6,
"described": 6,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
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"footprint": "viewers/footprint.html"
},
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},
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}