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FDC6321C

Public Made by Adom

by adom

onsemi MOSFETs, TSOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDC6321C

onsemi · MOSFETs · TSOT-23-6

FDC6321C from onsemi, in a TSOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of the N-channel FET (channel 1), logic level with VGS(th) < 1.0 V and absolute maximum VGSS of 8 V.
2 S2 passive Source of the P-channel FET (channel 2), rated at -25 V VDSS and -0.46 A continuous drain current.
3 G2 input Gate of the P-channel FET (channel 2), logic level with absolute maximum VGSS of -8 V.
4 D2 passive Drain of the P-channel FET (channel 2), rated at -25 V VDSS and -0.46 A continuous drain current.
5 S1 passive Source of the N-channel FET (channel 1), rated at 25 V VDSS and 0.68 A continuous drain current.
6 D1 passive Drain of the N-channel FET (channel 1), rated at 25 V VDSS and 0.68 A continuous drain current.

Key specifications

Parameter Value
Manufacturer onsemi
Package TSOT-23-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage, N-Channel VDSS 25 V 2
Drain-Source Voltage, P-Channel VDSS -25 V 2
Gate-Source Voltage, N-Channel VGSS 8 V 2
Gate-Source Voltage, P-Channel VGSS -8 V 2
Drain/Output Current Continuous, N-Channel ID 0.68 A 2
Drain/Output Current Continuous, P-Channel ID -0.46 A 2
Drain/Output Current Pulsed, N-Channel ID 2 A Pulsed 2
Drain/Output Current Pulsed, P-Channel ID -1.5 A Pulsed 2
Power Dissipation PD 0.9 W Note 1a 2
Power Dissipation PD 0.7 W Note 1b 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
ESD Electrostatic Discharge Rating (Human Body Model) ESD 6 kV Human Body Model (100 pF / 1500 Ω), MIL-STD-883D 2
Thermal Resistance, Junction-to-Ambient RJA 140 °C/W Note 1a 2
Thermal Resistance, Junction-to-Ambient (footnote 1b) RJA 180 °C/W Note 1b: 0.005 in2 pad of 2 oz. copper 3
Thermal Resistance, Junction-to-Case RJC 60 °C/W Note 1 2
Drain-Source Breakdown Voltage, N-Channel BVDSS 25 V VGS = 0 V, ID = 250 µA 2
Drain-Source Breakdown Voltage, P-Channel BVDSS -25 V VGS = 0 V, ID = −250 µA 2
Zero Gate Voltage Drain Current, N-Channel IDSS 1 µA VDS = 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current, N-Channel, TJ = 55°C IDSS 10 µA VDS = 20 V, VGS = 0 V, TJ = 55°C 2
Zero Gate Voltage Drain Current, P-Channel IDSS -1 nA VDS = −20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current, P-Channel, TJ = 55°C IDSS -10 nA VDS = −20 V, VGS = 0 V, TJ = 55°C 2
Gate-Body Leakage Current, N-Channel IGSS 100 nA VGS = 8 V, VDS = 0 V 2
Gate-Body Leakage Current, P-Channel IGSS -100 nA VGS = −8 V, VDS = 0 V 2
Gate Threshold Voltage, N-Channel VGS(th) 0.65 0.8 1.5 V VDS = VGS, ID = 250 µA 2
Gate Threshold Voltage, P-Channel VGS(th) -0.65 -0.86 -1.5 V VDS = VGS, ID = −250 µA 2
Static Drain-Source On-Resistance, N-Channel RDS(on) 0.33 0.45 Ω VGS = 4.5 V, ID = 0.5 A 2
Static Drain-Source On-Resistance, N-Channel, TJ = 125°C RDS(on) 0.51 0.72 Ω VGS = 4.5 V, ID = 0.5 A, TJ = 125°C 2
Static Drain-Source On-Resistance, N-Channel RDS(on) 0.44 0.6 Ω VGS = 2.7 V, ID = 0.25 A 2
Static Drain-Source On-Resistance, P-Channel RDS(on) 0.87 1.1 Ω VGS = −4.5 V, ID = −0.5 A 2
Static Drain-Source On-Resistance, P-Channel, TJ = 125°C RDS(on) 1.21 1.8 Ω VGS = −4.5 V, ID = −0.5 A, TJ = 125°C 2
Static Drain-Source On-Resistance, P-Channel RDS(on) 1.22 1.5 Ω VGS = −2.7 V, ID = −0.25 A 2
On-State Drain Current, N-Channel ID(on) 1 A VGS = 4.5 V, VDS = 5 V 2
On-State Drain Current, P-Channel ID(on) -1 A VGS = −4.5 V, VDS = −5 V 2
Turn-On Delay Time, N-Channel td(on) 6 ns VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 3
Turn-On Delay Time, P-Channel td(on) 20 ns VDD = −6 V, ID = −0.5 A, VGS = −4.5 V, RGEN = 50 3
Turn-On Rise Time, N-Channel tr 16 ns 3
Turn-On Rise Time, P-Channel tr 18 ns 3
Turn-Off Delay Time, N-Channel td(off) 30 ns 3
Turn-Off Delay Time, P-Channel td(off) 110 ns 3
Turn-Off Fall Time, N-Channel tf 25 ns 3
Turn-Off Fall Time, P-Channel tf 70 ns 3
Total Gate Charge, N-Channel Qg 1.64 2.3 nC VDS = 5 V, ID = 0.5 A, VGS = 4.5 V 3
Total Gate Charge, P-Channel Qg 1.1 1.5 nC VDS = −5 V, ID = −0.25 A, VGS = −4.5 V 3
Maximum Continuous Drain-Source Diode Forward Current, N-Channel IS 0.3 A 3
Maximum Continuous Drain-Source Diode Forward Current, P-Channel IS -0.5 A 3
Drain-Source Diode Forward Voltage, N-Channel VSD 0.83 1.2 V VGS = 0 V, IS = 0.5 A 3
Drain-Source Diode Forward Voltage, N-Channel, TJ = 125°C VSD 0.69 0.85 V VGS = 0 V, IS = 0.5 A, TJ = 125°C 3
Drain-Source Diode Forward Voltage, P-Channel VSD -0.89 -1.2 V VGS = 0 V, IS = −0.5 A 3
Drain-Source Diode Forward Voltage, P-Channel, TJ = 125°C VSD -0.75 -0.85 V VGS = 0 V, IS = −0.5 A, TJ = 125°C 3

CAD (KiCad official)

  • Symbol: FDC6321C
  • Footprint: Package_TO_SOT_SMD:TSOT-23-6
  • 3D model: TSOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: fdc6321c-etched.step / fdc6321c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdc6321c.step / fdc6321c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 8df6fe4bc82d1622, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF