component
FDC6321C
Public Made by Adomby adom
onsemi MOSFETs, TSOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDC6321C
onsemi · MOSFETs · TSOT-23-6
FDC6321C from onsemi, in a TSOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel FET (channel 1), logic level with VGS(th) < 1.0 V and absolute maximum VGSS of 8 V. |
| 2 | S2 | passive | Source of the P-channel FET (channel 2), rated at -25 V VDSS and -0.46 A continuous drain current. |
| 3 | G2 | input | Gate of the P-channel FET (channel 2), logic level with absolute maximum VGSS of -8 V. |
| 4 | D2 | passive | Drain of the P-channel FET (channel 2), rated at -25 V VDSS and -0.46 A continuous drain current. |
| 5 | S1 | passive | Source of the N-channel FET (channel 1), rated at 25 V VDSS and 0.68 A continuous drain current. |
| 6 | D1 | passive | Drain of the N-channel FET (channel 1), rated at 25 V VDSS and 0.68 A continuous drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TSOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage, N-Channel | VDSS | 25 | V | 2 | |||
| Drain-Source Voltage, P-Channel | VDSS | -25 | V | 2 | |||
| Gate-Source Voltage, N-Channel | VGSS | 8 | V | 2 | |||
| Gate-Source Voltage, P-Channel | VGSS | -8 | V | 2 | |||
| Drain/Output Current Continuous, N-Channel | ID | 0.68 | A | 2 | |||
| Drain/Output Current Continuous, P-Channel | ID | -0.46 | A | 2 | |||
| Drain/Output Current Pulsed, N-Channel | ID | 2 | A | Pulsed | 2 | ||
| Drain/Output Current Pulsed, P-Channel | ID | -1.5 | A | Pulsed | 2 | ||
| Power Dissipation | PD | 0.9 | W | Note 1a | 2 | ||
| Power Dissipation | PD | 0.7 | W | Note 1b | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| ESD Electrostatic Discharge Rating (Human Body Model) | ESD | 6 | kV | Human Body Model (100 pF / 1500 Ω), MIL-STD-883D | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 140 | °C/W | Note 1a | 2 | ||
| Thermal Resistance, Junction-to-Ambient (footnote 1b) | RJA | 180 | °C/W | Note 1b: 0.005 in2 pad of 2 oz. copper | 3 | ||
| Thermal Resistance, Junction-to-Case | RJC | 60 | °C/W | Note 1 | 2 | ||
| Drain-Source Breakdown Voltage, N-Channel | BVDSS | 25 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Drain-Source Breakdown Voltage, P-Channel | BVDSS | -25 | V | VGS = 0 V, ID = −250 µA | 2 | ||
| Zero Gate Voltage Drain Current, N-Channel | IDSS | 1 | µA | VDS = 20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current, N-Channel, TJ = 55°C | IDSS | 10 | µA | VDS = 20 V, VGS = 0 V, TJ = 55°C | 2 | ||
| Zero Gate Voltage Drain Current, P-Channel | IDSS | -1 | nA | VDS = −20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current, P-Channel, TJ = 55°C | IDSS | -10 | nA | VDS = −20 V, VGS = 0 V, TJ = 55°C | 2 | ||
| Gate-Body Leakage Current, N-Channel | IGSS | 100 | nA | VGS = 8 V, VDS = 0 V | 2 | ||
| Gate-Body Leakage Current, P-Channel | IGSS | -100 | nA | VGS = −8 V, VDS = 0 V | 2 | ||
| Gate Threshold Voltage, N-Channel | VGS(th) | 0.65 | 0.8 | 1.5 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate Threshold Voltage, P-Channel | VGS(th) | -0.65 | -0.86 | -1.5 | V | VDS = VGS, ID = −250 µA | 2 |
| Static Drain-Source On-Resistance, N-Channel | RDS(on) | 0.33 | 0.45 | Ω | VGS = 4.5 V, ID = 0.5 A | 2 | |
| Static Drain-Source On-Resistance, N-Channel, TJ = 125°C | RDS(on) | 0.51 | 0.72 | Ω | VGS = 4.5 V, ID = 0.5 A, TJ = 125°C | 2 | |
| Static Drain-Source On-Resistance, N-Channel | RDS(on) | 0.44 | 0.6 | Ω | VGS = 2.7 V, ID = 0.25 A | 2 | |
| Static Drain-Source On-Resistance, P-Channel | RDS(on) | 0.87 | 1.1 | Ω | VGS = −4.5 V, ID = −0.5 A | 2 | |
| Static Drain-Source On-Resistance, P-Channel, TJ = 125°C | RDS(on) | 1.21 | 1.8 | Ω | VGS = −4.5 V, ID = −0.5 A, TJ = 125°C | 2 | |
| Static Drain-Source On-Resistance, P-Channel | RDS(on) | 1.22 | 1.5 | Ω | VGS = −2.7 V, ID = −0.25 A | 2 | |
| On-State Drain Current, N-Channel | ID(on) | 1 | A | VGS = 4.5 V, VDS = 5 V | 2 | ||
| On-State Drain Current, P-Channel | ID(on) | -1 | A | VGS = −4.5 V, VDS = −5 V | 2 | ||
| Turn-On Delay Time, N-Channel | td(on) | 6 | ns | VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 | 3 | ||
| Turn-On Delay Time, P-Channel | td(on) | 20 | ns | VDD = −6 V, ID = −0.5 A, VGS = −4.5 V, RGEN = 50 | 3 | ||
| Turn-On Rise Time, N-Channel | tr | 16 | ns | 3 | |||
| Turn-On Rise Time, P-Channel | tr | 18 | ns | 3 | |||
| Turn-Off Delay Time, N-Channel | td(off) | 30 | ns | 3 | |||
| Turn-Off Delay Time, P-Channel | td(off) | 110 | ns | 3 | |||
| Turn-Off Fall Time, N-Channel | tf | 25 | ns | 3 | |||
| Turn-Off Fall Time, P-Channel | tf | 70 | ns | 3 | |||
| Total Gate Charge, N-Channel | Qg | 1.64 | 2.3 | nC | VDS = 5 V, ID = 0.5 A, VGS = 4.5 V | 3 | |
| Total Gate Charge, P-Channel | Qg | 1.1 | 1.5 | nC | VDS = −5 V, ID = −0.25 A, VGS = −4.5 V | 3 | |
| Maximum Continuous Drain-Source Diode Forward Current, N-Channel | IS | 0.3 | A | 3 | |||
| Maximum Continuous Drain-Source Diode Forward Current, P-Channel | IS | -0.5 | A | 3 | |||
| Drain-Source Diode Forward Voltage, N-Channel | VSD | 0.83 | 1.2 | V | VGS = 0 V, IS = 0.5 A | 3 | |
| Drain-Source Diode Forward Voltage, N-Channel, TJ = 125°C | VSD | 0.69 | 0.85 | V | VGS = 0 V, IS = 0.5 A, TJ = 125°C | 3 | |
| Drain-Source Diode Forward Voltage, P-Channel | VSD | -0.89 | -1.2 | V | VGS = 0 V, IS = −0.5 A | 3 | |
| Drain-Source Diode Forward Voltage, P-Channel, TJ = 125°C | VSD | -0.75 | -0.85 | V | VGS = 0 V, IS = −0.5 A, TJ = 125°C | 3 |
CAD (KiCad official)
- Symbol:
FDC6321C - Footprint:
Package_TO_SOT_SMD:TSOT-23-6 - 3D model: TSOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
fdc6321c-etched.step/fdc6321c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdc6321c.step/fdc6321c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (10 pp, sha256
8df6fe4bc82d1622, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).