component
DRV8235RTER
Public Made by Adomby adom
TI(德州仪器) , WQFN-16(3x3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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DRV8235RTER
TI(德州仪器) · IC · WQFN-16(3x3)
DRV8235RTER from TI(德州仪器), in a WQFN-16(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | IPROPI | output | Analog current output proportional to load current; connect a resistor from IPROPI to ground. |
| 2 | RSVD | unconnected | Reserved; leave this pin unconnected. |
| 3 | RSVD | unconnected | Reserved; leave this pin unconnected. |
| 4 | nFAULT | output | Open-drain fault indicator output pulled low during a fault condition; connect an external pullup resistor. |
| 5 | VM | power_in | Motor power supply (4.5 to 38 V); bypass to GND with a 0.1µF ceramic capacitor plus sufficient bulk capacitance rated for VM. |
| 6 | OUT1 | output | H-bridge output; connect directly to the motor. |
| 7 | GND | power_in | Device ground; connect to system ground. |
| 8 | OUT2 | output | H-bridge output; connect directly to the motor. |
| 9 | A1 | input | I2C base address select pin, tri-level input. |
| 10 | A0 | input | I2C base address select pin, tri-level input. |
| 11 | nSLEEP | input | Sleep mode input; logic high enables the device, logic low enters low-power sleep mode, with internal pulldown resistor. |
| 12 | PH/IN2 | input | Controls the H-bridge output; has internal pulldown. |
| 13 | EN/IN1 | input | Controls the H-bridge output; has internal pulldown. |
| 14 | SDA | bidirectional | I2C data signal; requires a pullup resistor. |
| 15 | SCL | input | I2C clock signal. |
| 16 | VREF | power_in | Analog input to set current regulation and stall detection level. |
| 17 | PAD | power_in | Thermal pad; connect to board ground using large ground planes on multiple layers and multiple nearby vias. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TI(德州仪器) |
| Package | WQFN-16(3x3) |
| Category | |
| Pins | 17 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Power supply pin voltage | VM | -0.5 | 40 | V | VM | 5 | |
| Power supply transient voltage ramp | VM | 0 | 2 | V/µs | VM | 5 | |
| Logic pin voltage | -0.3 | 5.75 | V | IN1, IN2, A1, A0, SDA, SCL, nSLEEP | 5 | ||
| Open-drain output pin voltage | -0.3 | 5.75 | V | nFAULT | 5 | ||
| IPROPI pin voltage, VM ≥ 5.45 V | -0.3 | 5.75 | V | VM ≥ 5.45 V | 5 | ||
| IPROPI pin voltage, VM < 5.45 V | -0.3 | V | VM < 5.45 V; max printed as VVM + 0.3 V | 5 | |||
| Reference input pin voltage | VREF | 0.3 | 5.75 | V | VREF | 5 | |
| Ambient temperature | TA | -40 | 125 | °C | 5 | ||
| Junction temperature | TJ | -40 | 150 | °C | 5 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 5 | ||
| ESD HBM | V(ESD) | -2000 | 2000 | V | Human body model, ANSI/ESDA/JEDEC JS-001 | 5 | |
| ESD CDM | V(ESD) | -500 | 500 | V | Charged device model, JESD22-C101 | 5 | |
| Power supply voltage | VVM | 4.5 | 38 | V | VM | 5 | |
| Logic input voltage | VIN | 0 | 5.5 | V | IN1, IN2, A1, A0, SDA, SCL, nSLEEP | 5 | |
| PWM frequency | fPWM | 0 | 200 | kHz | INx | 5 | |
| Open drain pullup voltage | VOD | 0 | 5.5 | V | nFAULT | 5 | |
| Open drain output current | IOD | 0 | 5 | mA | nFAULT | 5 | |
| Peak output current | IOUT | 0 | 3.7 | A | OUTx | 5 | |
| Current sense output current | IIPROPI | 0 | 3 | mA | IPROPI | 5 | |
| Current limit reference voltage | VVREF | 0 | 3.3 | V | VREF | 5 | |
| Operating ambient temperature | TA | -40 | 125 | °C | 5 | ||
| Operating junction temperature | TJ | -40 | 150 | °C | 5 | ||
| Junction-to-ambient thermal resistance | RθJA | 47.8 | °C/W | RTE (WQFN) 16 pins | 6 | ||
| Junction-to-case (top) thermal resistance | RθJC(top) | 48.2 | °C/W | 6 | |||
| Junction-to-board thermal resistance | RθJB | 22.4 | °C/W | 6 | |||
| Junction-to-top characterization parameter | ΨJT | 1.1 | °C/W | 6 | |||
| Junction-to-board characterization parameter | ΨJB | 22.4 | °C/W | 6 | |||
| Junction-to-case (bottom) thermal resistance | RθJC(bot) | 8.6 | °C/W | 6 | |||
| VM sleep mode current | IVMQ | 0.1 | 1 | µA | nSLEEP = 0 V, VVM = 24 V, TJ = 27°C | 6 | |
| VM active mode current | IVM | 3.5 | 4 | mA | nSLEEP = 3.3 V, IN1 = 3.3 V, IN2 = 0 V, VVM = 24 V | 6 | |
| Input logic low voltage | VIL | 0 | 0.5 | V | 6 | ||
| Input logic high voltage | VIH | 1.5 | 5.5 | V | 6 | ||
| Input logic low current | IIL | -1 | 1 | µA | VI = 0 V | 6 | |
| Input logic high current | IIH | 33 | 100 | µA | VI = 5 V | 6 | |
| Tri-level input logic low voltage | VTIL | 0 | 0.6 | V | 6 | ||
| Tri-level input Hi-Z voltage | VTIHZ | 1.8 | 2 | 2.2 | V | 6 | |
| Tri-level input logic high voltage | VTIH | 2.7 | 5.5 | V | 6 | ||
| Output logic low voltage | VOL | 0.3 | V | IOD = 5 mA | 6 | ||
| Output logic high current | IOZ | -1 | 1 | µA | VOD = 3.3 V | 6 | |
| nFAULT low pulse width | tPW_nFAULT | 30 | 50 | 70 | µs | RC Count overflow, RC_REP = 11b | 6 |
| SDA capacitive load for each bus line | CB | 400 | pF | 6 | |||
| High-side MOSFET on resistance 25C | RDS(ON)_HS | 300 | 360 | mΩ | IOUTx = 1 A; TJ = 25 °C | 6 | |
| High-side MOSFET on resistance 125C | RDS(ON)_HS | 450 | 540 | mΩ | IOUTx = 1 A; TJ = 125 °C | 6 | |
| High-side MOSFET on resistance 150C | RDS(ON)_HS | 500 | 600 | mΩ | IOUTx = 1 A; TJ = 150 °C | 6 | |
| Low-side MOSFET on resistance 25C | RDS(ON)_LS | 300 | 360 | mΩ | IOUTx = -1 A; TJ = 25 °C | 6 | |
| Low-side MOSFET on resistance 125C | RDS(ON)_LS | 450 | 540 | mΩ | IOUTx = -1 A; TJ = 125 °C | 6 | |
| Low-side MOSFET on resistance 150C | RDS(ON)_LS | 500 | 600 | mΩ | IOUTx = -1 A; TJ = 150 °C | 7 | |
| Internal reference voltage | VREF_INT | 2.88 | 3 | 3.12 | V | INT_VREF = 1b | 7 |
| Current mirror total error | AERR | -10 | 10 | % | IOUT = 0.1 A, VVM ≥ 5.5 V | 7 | |
| Current mirror total error | AERR | -7 | 7 | % | 0.15 A ≤ IOUT < 0.5 A, VVM ≥ 5.5 V | 7 | |
| Current mirror total error | AERR | -5 | 5 | % | IOUT ≥ 0.5 A, VVM ≥ 5.5 V | 7 | |
| Inrush time blanking for stall detection | tINRUSH | 5 | 6716 | ms | 7 | ||
| VM UVLO rising | VUVLO_VM | 4.15 | 4.3 | 4.45 | V | Supply rising | 7 |
| VM UVLO falling | VUVLO_VM | 4.05 | 4.2 | 4.35 | V | Supply falling | 7 |
| Thermal shutdown temperature | TTSD | 150 | 175 | °C | 7 | ||
| Line regulation | ΔVLINE | -2 | 2 | % | 5.5 V ≤ VVM ≤ 38 V, VOUT = 5 V, IOUT = 2 A | 7 | |
| Load regulation | ΔVLOAD | -1 | 1 | % | VVM = 24 V, VOUT = 5 V, IOUT = 100 mA to 2 A | 7 | |
| Current scaling factor | AIPROPI | 1500 | µA/A | 7 | |||
| Overcurrent protection trip point | IOCP | 3.7 | A | 7 | |||
| Standard mode SCL clock frequency | fSCL | 0 | 100 | kHz | STANDARD MODE | 7 | |
| Fast mode SCL clock frequency | fSCL | 0 | 400 | kHz | FAST MODE | 8 |
CAD (KiCad official)
- Symbol:
DRV8235RTER - Footprint:
Package_DFN_QFN:QFN-16-1EP_3x3mm_P0.5mm_EP1.7x1.7mm - 3D model: WQFN-16(3x3) (KiCad packages3D, STEP)
- 3D model files:
drv8235rter-etched.step/drv8235rter-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);drv8235rter.step/drv8235rter.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TI(德州仪器) datasheet (87 pp, sha256
aaf9b507363a6e28, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).