# DP8810

**Shenzhen Developer Microelec** · MOSFETs · TSSOP-8

DP8810 from Shenzhen Developer Microelec, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2 (dual N-channel, VDS max 20 V, ID 6 A continuous). |
| 2 | S1 | passive | Source of MOSFET 1 (N-channel, VDS max 20 V, ID 6 A continuous). |
| 3 | S1 | passive | Source of MOSFET 1 (N-channel, VDS max 20 V, ID 6 A continuous), tied with pin 2. |
| 4 | G1 | input | Gate of MOSFET 1, ESD protected (2000 V HBM), VGS max ±8 V, threshold 0.55 to 1 V. |
| 5 | G2 | input | Gate of MOSFET 2, ESD protected (2000 V HBM), VGS max ±8 V, threshold 0.55 to 1 V. |
| 6 | S2 | passive | Source of MOSFET 2 (N-channel, VDS max 20 V, ID 6 A continuous). |
| 7 | S2 | passive | Source of MOSFET 2 (N-channel, VDS max 20 V, ID 6 A continuous), tied with pin 6. |
| 8 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2 (dual N-channel, VDS max 20 V), tied with pin 1. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen Developer Microelec |
| Package | TSSOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 |  |  | V | VGS=0V ID=250μA | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=16V,VGS=0V | 3 |
| Gate-Body Leakage Current | IGSS | -10 |  | 10 | μA | VGS=±8V,VDS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | 0.55 | 0.7 | 1 | V | VDS=VGS,ID=250μA | 3 |
| Drain-Source On-State Resistance | RDS(ON) |  | 14 | 20 | mΩ | VGS=4.5V, ID=6A | 3 |
| Drain-Source On-State Resistance | RDS(ON) |  | 17 | 25 | mΩ | VGS=2.5V, ID=5A | 3 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=1.7A | 3 |
| Drain-Source Diode Forward Current | IS |  |  | 2 | A | VGS=0V | 3 |
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 2 |
| Gate-Source Voltage | VGS | -8 |  | 8 | V |  | 2 |
| Drain Current-Continuous | ID |  |  | 6 | A | @ TJ=25℃ | 2 |
| Pulsed Drain Current | IDM |  |  | 30 | A | Pulsed | 2 |
| Maximum Power Dissipation | PD |  |  | 1.5 | W |  | 2 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 100 | ℃/W |  | 2 |

## CAD (KiCad official)

- Symbol: `DP8810`
- Footprint: `Package_SO:TSSOP-8_3x3mm_P0.65mm`
- 3D model: TSSOP-8 (KiCad packages3D, STEP)
- 3D model files: `dp8810-etched.step` / `dp8810-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dp8810.step` / `dp8810.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shenzhen Developer Microelec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590892670493806592) (8 pp, sha256 `8ea98f0f6eb0c96a`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dp8810-datasheet.pdf)