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DP8810

Public Made by Adom

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Shenzhen Developer Microelec MOSFETs, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DP8810

Shenzhen Developer Microelec · MOSFETs · TSSOP-8

DP8810 from Shenzhen Developer Microelec, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D1/D2 passive Common drain of MOSFET 1 and MOSFET 2 (dual N-channel, VDS max 20 V, ID 6 A continuous).
2 S1 passive Source of MOSFET 1 (N-channel, VDS max 20 V, ID 6 A continuous).
3 S1 passive Source of MOSFET 1 (N-channel, VDS max 20 V, ID 6 A continuous), tied with pin 2.
4 G1 input Gate of MOSFET 1, ESD protected (2000 V HBM), VGS max ±8 V, threshold 0.55 to 1 V.
5 G2 input Gate of MOSFET 2, ESD protected (2000 V HBM), VGS max ±8 V, threshold 0.55 to 1 V.
6 S2 passive Source of MOSFET 2 (N-channel, VDS max 20 V, ID 6 A continuous).
7 S2 passive Source of MOSFET 2 (N-channel, VDS max 20 V, ID 6 A continuous), tied with pin 6.
8 D1/D2 passive Common drain of MOSFET 1 and MOSFET 2 (dual N-channel, VDS max 20 V), tied with pin 1.

Key specifications

Parameter Value
Manufacturer Shenzhen Developer Microelec
Package TSSOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V ID=250μA 3
Zero Gate Voltage Drain Current IDSS 1 μA VDS=16V,VGS=0V 3
Gate-Body Leakage Current IGSS -10 10 μA VGS=±8V,VDS=0V 3
Gate Threshold Voltage VGS(th) 0.55 0.7 1 V VDS=VGS,ID=250μA 3
Drain-Source On-State Resistance RDS(ON) 14 20 mΩ VGS=4.5V, ID=6A 3
Drain-Source On-State Resistance RDS(ON) 17 25 mΩ VGS=2.5V, ID=5A 3
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=1.7A 3
Drain-Source Diode Forward Current IS 2 A VGS=0V 3
Drain-Source Voltage VDS 20 V 2
Gate-Source Voltage VGS -8 8 V 2
Drain Current-Continuous ID 6 A @ TJ=25℃ 2
Pulsed Drain Current IDM 30 A Pulsed 2
Maximum Power Dissipation PD 1.5 W 2
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 2
Thermal Resistance, Junction-to-Ambient RθJA 100 ℃/W 2

CAD (KiCad official)

  • Symbol: DP8810
  • Footprint: Package_SO:TSSOP-8_3x3mm_P0.65mm
  • 3D model: TSSOP-8 (KiCad packages3D, STEP)
  • 3D model files: dp8810-etched.step / dp8810-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dp8810.step / dp8810.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shenzhen Developer Microelec datasheet (8 pp, sha256 8ea98f0f6eb0c96a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF