# DO4801A

**DOINGTER** · MOSFETs · SOP-8

DO4801A from DOINGTER, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1 (pin 1 marker end of the package). |
| 2 | G1 | input | Gate of P-channel MOSFET 1, with VGS rated ±20 V and threshold of -1 to -3 V. |
| 3 | S2 | passive | Source of P-channel MOSFET 2. |
| 4 | G2 | input | Gate of P-channel MOSFET 2, with VGS rated ±20 V and threshold of -1 to -3 V. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2, rated VDS -30 V and ID -5 A, internally common with pin 6. |
| 6 | D2 | passive | Drain of P-channel MOSFET 2, rated VDS -30 V and ID -5 A, internally common with pin 5. |
| 7 | D1 | passive | Drain of P-channel MOSFET 1, rated VDS -30 V and ID -5 A, internally common with pin 8. |
| 8 | D1 | passive | Drain of P-channel MOSFET 1, rated VDS -30 V and ID -5 A, internally common with pin 7. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID | -5 |  |  | A |  | 1 |
| Continuous Drain Current | ID | -3.5 |  |  | A | TA=100℃ | 1 |
| Pulsed Drain Current | IDM | -20 |  |  | A |  | 1 |
| Power Dissipation | PD |  |  | 2.5 | W |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 3 | mJ | TJ=25℃, VDD=-15V, VG=-10V, L=0.5mH | 1 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction to Ambient | RƟJA |  |  | 50 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | VGS=0V,ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VGS=0V, VDS=-30V | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0A | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -1 | -1.5 | -3 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) |  | 35 | 43 | mΩ | VGS=-10V,ID=-5.1A; pulse width≤300μs, duty cycle≤0.5% | 2 |
| Drain-Source On Resistance | RDS(ON) |  | 44 | 57 | mΩ | VGS=-4.5V,ID=-4.2A; pulse width≤300μs, duty cycle≤0.5% | 2 |
| Drain-Source On Resistance | RDS(ON) |  | 60 | 78 | mΩ | VGS=-2.5V,ID=-3.3A; pulse width≤300μs, duty cycle≤0.5% | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, ISD=-5.1A | 2 |
| Continuous Drain Current (body diode) | IS |  |  | -5 | A | VD=VG=0V | 2 |
| Pulsed Drain Current (body diode) | ISM |  |  | -20 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `DO4801A`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `do4801a-etched.step` / `do4801a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `do4801a.step` / `do4801a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [DOINGTER datasheet](docs/do4801a-datasheet.pdf) (8 pp, sha256 `30e655414f67a167`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/do4801a-datasheet.pdf)