component
DO4801A
Public Made by Adomby adom
DOINGTER MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDO4801A
DOINGTER · MOSFETs · SOP-8
DO4801A from DOINGTER, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1 (pin 1 marker end of the package). |
| 2 | G1 | input | Gate of P-channel MOSFET 1, with VGS rated ±20 V and threshold of -1 to -3 V. |
| 3 | S2 | passive | Source of P-channel MOSFET 2. |
| 4 | G2 | input | Gate of P-channel MOSFET 2, with VGS rated ±20 V and threshold of -1 to -3 V. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2, rated VDS -30 V and ID -5 A, internally common with pin 6. |
| 6 | D2 | passive | Drain of P-channel MOSFET 2, rated VDS -30 V and ID -5 A, internally common with pin 5. |
| 7 | D1 | passive | Drain of P-channel MOSFET 1, rated VDS -30 V and ID -5 A, internally common with pin 8. |
| 8 | D1 | passive | Drain of P-channel MOSFET 1, rated VDS -30 V and ID -5 A, internally common with pin 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -5 | A | 1 | |||
| Continuous Drain Current | ID | -3.5 | A | TA=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -20 | A | 1 | |||
| Power Dissipation | PD | 2.5 | W | 1 | |||
| Single pulse avalanche energy | EAS | 3 | mJ | TJ=25℃, VDD=-15V, VG=-10V, L=0.5mH | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction to Ambient | RƟJA | 50 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VGS=0V, VDS=-30V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | -1 | -1.5 | -3 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | 35 | 43 | mΩ | VGS=-10V,ID=-5.1A; pulse width≤300μs, duty cycle≤0.5% | 2 | |
| Drain-Source On Resistance | RDS(ON) | 44 | 57 | mΩ | VGS=-4.5V,ID=-4.2A; pulse width≤300μs, duty cycle≤0.5% | 2 | |
| Drain-Source On Resistance | RDS(ON) | 60 | 78 | mΩ | VGS=-2.5V,ID=-3.3A; pulse width≤300μs, duty cycle≤0.5% | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, ISD=-5.1A | 2 | ||
| Continuous Drain Current (body diode) | IS | -5 | A | VD=VG=0V | 2 | ||
| Pulsed Drain Current (body diode) | ISM | -20 | A | 2 |
CAD (KiCad official)
- Symbol:
DO4801A - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
do4801a-etched.step/do4801a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);do4801a.step/do4801a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DOINGTER datasheet (8 pp, sha256
30e655414f67a167, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).