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DO4801A

Public Made by Adom

by adom

DOINGTER MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DO4801A

DOINGTER · MOSFETs · SOP-8

DO4801A from DOINGTER, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of P-channel MOSFET 1 (pin 1 marker end of the package).
2 G1 input Gate of P-channel MOSFET 1, with VGS rated ±20 V and threshold of -1 to -3 V.
3 S2 passive Source of P-channel MOSFET 2.
4 G2 input Gate of P-channel MOSFET 2, with VGS rated ±20 V and threshold of -1 to -3 V.
5 D2 passive Drain of P-channel MOSFET 2, rated VDS -30 V and ID -5 A, internally common with pin 6.
6 D2 passive Drain of P-channel MOSFET 2, rated VDS -30 V and ID -5 A, internally common with pin 5.
7 D1 passive Drain of P-channel MOSFET 1, rated VDS -30 V and ID -5 A, internally common with pin 8.
8 D1 passive Drain of P-channel MOSFET 1, rated VDS -30 V and ID -5 A, internally common with pin 7.

Key specifications

Parameter Value
Manufacturer DOINGTER
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -5 A 1
Continuous Drain Current ID -3.5 A TA=100℃ 1
Pulsed Drain Current IDM -20 A 1
Power Dissipation PD 2.5 W 1
Single pulse avalanche energy EAS 3 mJ TJ=25℃, VDD=-15V, VG=-10V, L=0.5mH 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance, Junction to Ambient RƟJA 50 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VGS=0V, VDS=-30V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate-Source Threshold Voltage VGS(th) -1 -1.5 -3 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 35 43 mΩ VGS=-10V,ID=-5.1A; pulse width≤300μs, duty cycle≤0.5% 2
Drain-Source On Resistance RDS(ON) 44 57 mΩ VGS=-4.5V,ID=-4.2A; pulse width≤300μs, duty cycle≤0.5% 2
Drain-Source On Resistance RDS(ON) 60 78 mΩ VGS=-2.5V,ID=-3.3A; pulse width≤300μs, duty cycle≤0.5% 2
Diode Forward Voltage VSD -1.2 V VGS=0V, ISD=-5.1A 2
Continuous Drain Current (body diode) IS -5 A VD=VG=0V 2
Pulsed Drain Current (body diode) ISM -20 A 2

CAD (KiCad official)

  • Symbol: DO4801A
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: do4801a-etched.step / do4801a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); do4801a.step / do4801a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DOINGTER datasheet (8 pp, sha256 30e655414f67a167, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF