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DMN6040SSD-13

Diodes Incorporated · MOSFETs · SO-8

DMN6040SSD-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel); body diode forward current IS max 2.5A.
2 G1 input Gate of MOSFET 1; VGSS rated ±20V with threshold VGS(TH) of 1V min to 3V max.
3 S2 passive Source of MOSFET 2 (N-channel); body diode forward current IS max 2.5A.
4 G2 input Gate of MOSFET 2; VGSS rated ±20V with threshold VGS(TH) of 1V min to 3V max.
5 D2 passive Drain of MOSFET 2, tied internally with pin 6; VDSS 60V and continuous ID 5.0A at TA=+25°C.
6 D2 passive Drain of MOSFET 2, tied internally with pin 5; VDSS 60V and continuous ID 5.0A at TA=+25°C.
7 D1 passive Drain of MOSFET 1, tied internally with pin 8; VDSS 60V and continuous ID 5.0A at TA=+25°C.
8 D1 passive Drain of MOSFET 1, tied internally with pin 7; VDSS 60V and continuous ID 5.0A at TA=+25°C.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Zero Gate Voltage Drain Current IDSS 100 nA VDS = 60V, VGS = 0V 2
Gate-Source Leakage IGSS 100 nA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 1 3 V VDS = VGS, ID = 250µA 2
Static Drain-Source On-Resistance RDS(ON) 30 40 mΩ VGS = 10V, ID = 4.5A 2
Static Drain-Source On-Resistance RDS(ON) 35 55 mΩ VGS = 4.5V, ID = 3.5A 2
Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 1A 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250µA 2
Drain-Source Voltage VDSS 60 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current (steady state) ID 5 A VGS = 10V, steady state, TA = +25°C (Note 6) 2
Continuous Drain Current (steady state) ID 4.1 A VGS = 10V, steady state, TA = +70°C (Note 6) 2
Continuous Drain Current (t<10s) ID 6.6 A VGS = 10V, t<10s, TA = +25°C (Note 6) 2
Continuous Drain Current (t<10s) ID 5.3 A VGS = 10V, t<10s, TA = +70°C (Note 6) 2
Maximum Body Diode Forward Current IS 2.5 A Note 6 2
Pulsed Drain Current IDM 30 A 10µs pulse, duty cycle = 1% 2
Pulsed Body Diode Forward Current ISM 30 A 10μs pulse, duty cycle = 1% 2
Avalanche Current IAS 14.2 A L = 0.1mH (Note 7) 2
Avalanche Energy EAS 10 mJ L = 0.1mH (Note 7) 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Total Power Dissipation PD 1.3 W TA = +25°C (Note 5) 2
Total Power Dissipation PD 0.8 W TA = +70°C (Note 5) 2
Thermal Resistance, Junction to Ambient RθJA 102 °C/W Steady state (Note 5) 2
Thermal Resistance, Junction to Ambient RθJA 61 °C/W t<10s (Note 5) 2
Total Power Dissipation PD 1.7 W TA = +25°C (Note 6) 2
Total Power Dissipation PD 1.1 W TA = +70°C (Note 6) 2
Thermal Resistance, Junction to Ambient RθJA 75 °C/W Steady state (Note 6) 2
Thermal Resistance, Junction to Ambient RθJA 50 °C/W t<10s (Note 6) 2
Thermal Resistance, Junction to Case RθJC 14.5 °C/W Note 6 2

CAD (KiCad official)

  • Symbol: DMN6040SSD-13
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: dmn6040ssd-13-etched.step / dmn6040ssd-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn6040ssd-13.step / dmn6040ssd-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 3fcce1302ca5bbe1, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF