component
DMN6040SSD-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDMN6040SSD-13
Diodes Incorporated · MOSFETs · SO-8
DMN6040SSD-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel); body diode forward current IS max 2.5A. |
| 2 | G1 | input | Gate of MOSFET 1; VGSS rated ±20V with threshold VGS(TH) of 1V min to 3V max. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel); body diode forward current IS max 2.5A. |
| 4 | G2 | input | Gate of MOSFET 2; VGSS rated ±20V with threshold VGS(TH) of 1V min to 3V max. |
| 5 | D2 | passive | Drain of MOSFET 2, tied internally with pin 6; VDSS 60V and continuous ID 5.0A at TA=+25°C. |
| 6 | D2 | passive | Drain of MOSFET 2, tied internally with pin 5; VDSS 60V and continuous ID 5.0A at TA=+25°C. |
| 7 | D1 | passive | Drain of MOSFET 1, tied internally with pin 8; VDSS 60V and continuous ID 5.0A at TA=+25°C. |
| 8 | D1 | passive | Drain of MOSFET 1, tied internally with pin 7; VDSS 60V and continuous ID 5.0A at TA=+25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Zero Gate Voltage Drain Current | IDSS | 100 | nA | VDS = 60V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | 100 | nA | VGS = ±20V, VDS = 0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 1 | 3 | V | VDS = VGS, ID = 250µA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 30 | 40 | mΩ | VGS = 10V, ID = 4.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 35 | 55 | mΩ | VGS = 4.5V, ID = 3.5A | 2 | |
| Diode Forward Voltage | VSD | 0.7 | 1.2 | V | VGS = 0V, IS = 1A | 2 | |
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS = 0V, ID = 250µA | 2 | ||
| Drain-Source Voltage | VDSS | 60 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current (steady state) | ID | 5 | A | VGS = 10V, steady state, TA = +25°C (Note 6) | 2 | ||
| Continuous Drain Current (steady state) | ID | 4.1 | A | VGS = 10V, steady state, TA = +70°C (Note 6) | 2 | ||
| Continuous Drain Current (t<10s) | ID | 6.6 | A | VGS = 10V, t<10s, TA = +25°C (Note 6) | 2 | ||
| Continuous Drain Current (t<10s) | ID | 5.3 | A | VGS = 10V, t<10s, TA = +70°C (Note 6) | 2 | ||
| Maximum Body Diode Forward Current | IS | 2.5 | A | Note 6 | 2 | ||
| Pulsed Drain Current | IDM | 30 | A | 10µs pulse, duty cycle = 1% | 2 | ||
| Pulsed Body Diode Forward Current | ISM | 30 | A | 10μs pulse, duty cycle = 1% | 2 | ||
| Avalanche Current | IAS | 14.2 | A | L = 0.1mH (Note 7) | 2 | ||
| Avalanche Energy | EAS | 10 | mJ | L = 0.1mH (Note 7) | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Total Power Dissipation | PD | 1.3 | W | TA = +25°C (Note 5) | 2 | ||
| Total Power Dissipation | PD | 0.8 | W | TA = +70°C (Note 5) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 102 | °C/W | Steady state (Note 5) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 61 | °C/W | t<10s (Note 5) | 2 | ||
| Total Power Dissipation | PD | 1.7 | W | TA = +25°C (Note 6) | 2 | ||
| Total Power Dissipation | PD | 1.1 | W | TA = +70°C (Note 6) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 75 | °C/W | Steady state (Note 6) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 50 | °C/W | t<10s (Note 6) | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 14.5 | °C/W | Note 6 | 2 |
CAD (KiCad official)
- Symbol:
DMN6040SSD-13 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
dmn6040ssd-13-etched.step/dmn6040ssd-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn6040ssd-13.step/dmn6040ssd-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
3fcce1302ca5bbe1, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).