DMHC6070LSD-13

{
  "schema_version": 1,
  "type": "component",
  "slug": "dmhc6070lsd-13",
  "title": "DMHC6070LSD-13",
  "brief": "Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
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  "component": {
    "mpn": "DMHC6070LSD-13",
    "manufacturer": "Diodes Incorporated",
    "package": "SO-8",
    "pin_count": 8,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://www.diodes.com/assets/Datasheets/DMHC6070LSD-13.pdf",
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    "distributor_links": {
      "lcsc": "C5451815",
      "digikey": "DMHC6070LSD-13DITR-ND",
      "mouser": "621-DMHC6070LSD-13"
    },
    "distributor_check": {
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      "source": "Component Ocean /api/assign-pns",
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        "lifecycle": "Active"
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    },
    "pins": [
      {
        "number": "1",
        "name": "N1G",
        "type": "input",
        "description": "Gate of N-channel MOSFET N1 (gate-source rating ±20V, VGS(TH) 1.0 to 3.0V)."
      },
      {
        "number": "2",
        "name": "N1D/P1D",
        "type": "passive",
        "description": "Common drain of N1 and P1 forming the first half-bridge output (N-channel 60V, P-channel -60V VDSS)."
      },
      {
        "number": "3",
        "name": "N1S/N2S",
        "type": "passive",
        "description": "Common source of both N-channel MOSFETs N1 and N2, the low-side return of the H-bridge."
      },
      {
        "number": "4",
        "name": "N2G",
        "type": "input",
        "description": "Gate of N-channel MOSFET N2 (gate-source rating ±20V, VGS(TH) 1.0 to 3.0V)."
      },
      {
        "number": "5",
        "name": "P2G",
        "type": "input",
        "description": "Gate of P-channel MOSFET P2 (gate-source rating ±20V, VGS(TH) -1 to -3V)."
      },
      {
        "number": "6",
        "name": "N2D/P2D",
        "type": "passive",
        "description": "Common drain of N2 and P2 forming the second half-bridge output (N-channel 60V, P-channel -60V VDSS)."
      },
      {
        "number": "7",
        "name": "P1S/P2S",
        "type": "passive",
        "description": "Common source of both P-channel MOSFETs P1 and P2, the high-side supply connection of the H-bridge."
      },
      {
        "number": "8",
        "name": "P1G",
        "type": "input",
        "description": "Gate of P-channel MOSFET P1 (gate-source rating ±20V, VGS(TH) -1 to -3V)."
      }
    ],
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        "guard_notes": [
          "extractor flagged: Pin numbers inferred from the top-view diagram: pin 1 at the bottom-left (dot), numbered counter-clo",
          "vision extraction: provenance cannot be text-verified; needs consensus"
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        "cost_usd": 0.3954,
        "at": "2026-10-23T12:25:05"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 8,
        "described": 8,
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        "refuses_to_fabricate": true
      }
    },
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      "footprint": "viewers/footprint.html"
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  "metadata": {
    "specs": {
      "Manufacturer": "Diodes Incorporated",
      "Package": "SO-8",
      "Category": "Transistors/Thyristors",
      "Pins": "8"
    },
    "appearance": {
      "contacts": {
        "quote": " Terminal Connections Indicator: See diagram  Terminals: Finish – Matte Tin Annealed over Copper Leadframe.",
        "page": 1,
        "doc": "ds.pdf",
        "material": "Copper",
        "plating": "tin"
      },
      "housing": {
        "quote": "Body Diode Reverse Recovery Charge QRR  3.8  nC IS = -1.0A, dI/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.",
        "page": 3,
        "doc": "ds.pdf",
        "material": "PC"
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          "unit": "V",
          "min": 60,
          "typ": null,
          "max": null,
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          "name": "N-ch Zero Gate Voltage Drain Current",
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        {
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        {
          "name": "N-ch Static Drain-Source On-Resistance",
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          "typ": 70,
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          "name": "N-ch Diode Forward Voltage",
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          "typ": null,
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          "name": "P-ch Zero Gate Voltage Drain Current",
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          "kind": "electrical",
          "unit": "μA",
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          "max": -1,
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          "conditions": "VGS = 0V, IS = -2A",
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        {
          "name": "N-ch Drain-Source Voltage",
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          "typ": null,
          "max": 60,
          "conditions": "TA = +25°C",
          "source_page": 2,
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        {
          "name": "N-ch Gate-Source Voltage",
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          "kind": "absolute_maximum",
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          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "TA = +25°C",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "N-ch Continuous Drain Current, steady state",
          "symbol": "ID",
          "kind": "absolute_maximum",
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          "min": null,
          "typ": null,
          "max": 3.1,
          "conditions": "VGS = 10V, TA = +25°C",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "N-ch Continuous Drain Current, steady state",
          "symbol": "ID",
          "kind": "absolute_maximum",
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          "min": null,
          "typ": null,
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          "conditions": "VGS = 10V, TA = +70°C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "N-ch Continuous Drain Current, t<10s",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 4.1,
          "conditions": "VGS = 10V, TA = +25°C",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "N-ch Continuous Drain Current, t<10s",
          "symbol": "ID",
          "kind": "absolute_maximum",
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          "min": null,
          "typ": null,
          "max": 3.3,
          "conditions": "VGS = 10V, TA = +70°C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "N-ch Body Diode Forward Current",
          "symbol": "IS",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 2,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "N-ch Pulsed Drain Current",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 15,
          "conditions": "10µs Pulse, Duty Cycle = 1%",
          "source_page": 2,
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          "symbol": "IAS",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
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          "max": 12,
          "conditions": "L = 0.1mH",
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          "source": "datasheet"
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          "min": null,
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          "max": 8,
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          "min": -60,
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          "max": null,
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          "source": "datasheet"
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          "conditions": "TA = +25°C",
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          "name": "P-ch Continuous Drain Current, steady state",
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          "source_page": 2,
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          "typ": null,
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          "conditions": "VGS = -10V, TA = 70°C",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "P-ch Continuous Drain Current, t<10s",
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          "source_page": 2,
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          "source_page": 2,
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          "max": 8,
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        {
          "name": "Total Power Dissipation",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 1.6,
          "conditions": "TA = +25°C",
          "source_page": 2,
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        {
          "name": "Operating and Storage Temperature Range",
          "symbol": "TJ, TSTG",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 2,
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          "name": "Thermal Resistance, Junction to Ambient, steady state",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 75,
          "max": null,
          "conditions": "Steady State",
          "source_page": 2,
          "source": "datasheet"
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          "name": "Thermal Resistance, Junction to Ambient, t<10s",
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          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 45,
          "max": null,
          "conditions": "t<10s",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Thermal Resistance, Junction to Case",
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          "unit": "°C/W",
          "min": null,
          "typ": 11,
          "max": null,
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          "source_page": 2,
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        {
          "name": "N-ch Input Capacitance",
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          "unit": "pF",
          "min": null,
          "typ": 731,
          "max": null,
          "conditions": "VDS= 20V, VGS= 0V, f= 1MHz",
          "source_page": 3,
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          "min": null,
          "typ": 34,
          "max": null,
          "conditions": "VDS= 20V, VGS= 0V, f= 1MHz",
          "source_page": 3,
          "source": "datasheet"
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        {
          "name": "N-ch Reverse Transfer Capacitance",
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          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 23,
          "max": null,
          "conditions": "VDS= 20V, VGS= 0V, f= 1MHz",
          "source_page": 3,
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        {
          "name": "N-ch Gate resistance",
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          "unit": "Ω",
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          "source_page": 3,
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        {
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          "source_page": 3,
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        {
          "name": "P-ch Output Capacitance",
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          "conditions": "VDS = -20V, VGS = 0V, f = 1.0MHz",
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        {
          "name": "P-ch Reverse Transfer Capacitance",
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          "typ": 26,
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          "source_page": 3,
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        {
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