component
DMHC6070LSD-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownDMHC6070LSD-13
Diodes Incorporated · MOSFETs · SO-8
DMHC6070LSD-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | N1G | input | Gate of N-channel MOSFET N1 (gate-source rating ±20V, VGS(TH) 1.0 to 3.0V). |
| 2 | N1D/P1D | passive | Common drain of N1 and P1 forming the first half-bridge output (N-channel 60V, P-channel -60V VDSS). |
| 3 | N1S/N2S | passive | Common source of both N-channel MOSFETs N1 and N2, the low-side return of the H-bridge. |
| 4 | N2G | input | Gate of N-channel MOSFET N2 (gate-source rating ±20V, VGS(TH) 1.0 to 3.0V). |
| 5 | P2G | input | Gate of P-channel MOSFET P2 (gate-source rating ±20V, VGS(TH) -1 to -3V). |
| 6 | N2D/P2D | passive | Common drain of N2 and P2 forming the second half-bridge output (N-channel 60V, P-channel -60V VDSS). |
| 7 | P1S/P2S | passive | Common source of both P-channel MOSFETs P1 and P2, the high-side supply connection of the H-bridge. |
| 8 | P1G | input | Gate of P-channel MOSFET P1 (gate-source rating ±20V, VGS(TH) -1 to -3V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Breakdown Voltage | BVDSS | 60 | V | ID = 250µA, VGS= 0V | 3 | ||
| N-ch Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS= 60V, VGS= 0V | 3 | ||
| N-ch Gate-Source Leakage | IGSS | 100 | nA | VGS= 20V, VDS= 0V | 3 | ||
| N-ch Gate Threshold Voltage | VGS(TH) | 1 | 3 | V | ID= 250µA, VDS= VGS | 3 | |
| N-ch Static Drain-Source On-Resistance | RDS(ON) | 60 | 100 | mΩ | VGS= 10V, ID= 1.0A | 3 | |
| N-ch Static Drain-Source On-Resistance | RDS(ON) | 70 | 120 | mΩ | VGS= 4.5V, ID= 0.5A | 3 | |
| N-ch Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS= 0V, IS= 3A | 3 | |
| P-ch Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS = 0V, ID = -250μA | 3 | ||
| P-ch Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -60V, VGS = 0V | 3 | ||
| P-ch Gate-Source Leakage | IGSS | 100 | nA | VGS = ±20V, VDS = 0V | 3 | ||
| P-ch Gate Threshold Voltage | VGS(TH) | -1 | -3 | V | VDS = VGS, ID = -250μA | 3 | |
| P-ch Static Drain-Source On-Resistance | RDS(ON) | 120 | 170 | mΩ | VGS = -10V, ID = -1.0A | 3 | |
| P-ch Static Drain-Source On-Resistance | RDS(ON) | 170 | 250 | mΩ | VGS = -4.5V, ID = -0.5A | 3 | |
| P-ch Diode Forward Voltage | VSD | -0.8 | -1.2 | V | VGS = 0V, IS = -2A | 3 | |
| N-ch Drain-Source Voltage | VDSS | 60 | V | TA = +25°C | 2 | ||
| N-ch Gate-Source Voltage | VGSS | -20 | 20 | V | TA = +25°C | 2 | |
| N-ch Continuous Drain Current, steady state | ID | 3.1 | A | VGS = 10V, TA = +25°C | 2 | ||
| N-ch Continuous Drain Current, steady state | ID | 2.5 | A | VGS = 10V, TA = +70°C | 2 | ||
| N-ch Continuous Drain Current, t<10s | ID | 4.1 | A | VGS = 10V, TA = +25°C | 2 | ||
| N-ch Continuous Drain Current, t<10s | ID | 3.3 | A | VGS = 10V, TA = +70°C | 2 | ||
| N-ch Body Diode Forward Current | IS | 2 | A | 2 | |||
| N-ch Pulsed Drain Current | IDM | 15 | A | 10µs Pulse, Duty Cycle = 1% | 2 | ||
| N-ch Avalanche Current | IAS | 12 | A | L = 0.1mH | 2 | ||
| N-ch Avalanche Energy | EAS | 8 | mJ | L = 0.1mH | 2 | ||
| P-ch Drain-Source Voltage | VDSS | -60 | V | TA = +25°C | 2 | ||
| P-ch Gate-Source Voltage | VGSS | -20 | 20 | V | TA = +25°C | 2 | |
| P-ch Continuous Drain Current, steady state | ID | -2.4 | A | VGS = -10V, TA = 25°C | 2 | ||
| P-ch Continuous Drain Current, steady state | ID | -1.9 | A | VGS = -10V, TA = 70°C | 2 | ||
| P-ch Continuous Drain Current, t<10s | ID | -3.1 | A | VGS = -10V, TA = 25°C | 2 | ||
| P-ch Continuous Drain Current, t<10s | ID | -2.5 | A | VGS = -10V, TA = 70°C | 2 | ||
| P-ch Body Diode Forward Current | IS | -2 | A | 2 | |||
| P-ch Pulsed Drain Current | IDM | -12 | A | 10µs Pulse, Duty Cycle = 1% | 2 | ||
| P-ch Avalanche Current | IAS | -12 | A | L = 0.1mH | 2 | ||
| P-ch Avalanche Energy | EAS | 8 | mJ | L = 0.1mH | 2 | ||
| Total Power Dissipation | PD | 1.6 | W | TA = +25°C | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction to Ambient, steady state | RθJA | 75 | °C/W | Steady State | 2 | ||
| Thermal Resistance, Junction to Ambient, t<10s | RθJA | 45 | °C/W | t<10s | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 11 | °C/W | 2 | |||
| N-ch Input Capacitance | CISS | 731 | pF | VDS= 20V, VGS= 0V, f= 1MHz | 3 | ||
| N-ch Output Capacitance | COSS | 34 | pF | VDS= 20V, VGS= 0V, f= 1MHz | 3 | ||
| N-ch Reverse Transfer Capacitance | CRSS | 23 | pF | VDS= 20V, VGS= 0V, f= 1MHz | 3 | ||
| N-ch Gate resistance | RG | 1.3 | Ω | VDS = 0V, VGS = 0V, f = 1.0MHz | 3 | ||
| P-ch Input Capacitance | CISS | 618 | pF | VDS = -20V, VGS = 0V, f = 1.0MHz | 3 | ||
| P-ch Output Capacitance | COSS | 36 | pF | VDS = -20V, VGS = 0V, f = 1.0MHz | 3 | ||
| P-ch Reverse Transfer Capacitance | CRSS | 26 | pF | VDS = -20V, VGS = 0V, f = 1.0MHz | 3 | ||
| P-ch Gate resistance | RG | 13 | Ω | VDS = 0V, VGS = 0V, f = 1.0MHz | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | PC | Body Diode Reverse Recovery Charge QRR 3.8 nC IS = -1.0A, dI/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. | 3 | |
| contacts | Copper | tin | Terminal Connections Indicator: See diagram Terminals: Finish, Matte Tin Annealed over Copper Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMHC6070LSD-13 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
dmhc6070lsd-13-etched.step/dmhc6070lsd-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmhc6070lsd-13.step/dmhc6070lsd-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (10 pp, sha256
c76b6c8370b56608, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).