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DMHC6070LSD-13

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Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMHC6070LSD-13

Diodes Incorporated · MOSFETs · SO-8

DMHC6070LSD-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 N1G input Gate of N-channel MOSFET N1 (gate-source rating ±20V, VGS(TH) 1.0 to 3.0V).
2 N1D/P1D passive Common drain of N1 and P1 forming the first half-bridge output (N-channel 60V, P-channel -60V VDSS).
3 N1S/N2S passive Common source of both N-channel MOSFETs N1 and N2, the low-side return of the H-bridge.
4 N2G input Gate of N-channel MOSFET N2 (gate-source rating ±20V, VGS(TH) 1.0 to 3.0V).
5 P2G input Gate of P-channel MOSFET P2 (gate-source rating ±20V, VGS(TH) -1 to -3V).
6 N2D/P2D passive Common drain of N2 and P2 forming the second half-bridge output (N-channel 60V, P-channel -60V VDSS).
7 P1S/P2S passive Common source of both P-channel MOSFETs P1 and P2, the high-side supply connection of the H-bridge.
8 P1G input Gate of P-channel MOSFET P1 (gate-source rating ±20V, VGS(TH) -1 to -3V).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-ch Drain-Source Breakdown Voltage BVDSS 60 V ID = 250µA, VGS= 0V 3
N-ch Zero Gate Voltage Drain Current IDSS 1 µA VDS= 60V, VGS= 0V 3
N-ch Gate-Source Leakage IGSS 100 nA VGS= 20V, VDS= 0V 3
N-ch Gate Threshold Voltage VGS(TH) 1 3 V ID= 250µA, VDS= VGS 3
N-ch Static Drain-Source On-Resistance RDS(ON) 60 100 mΩ VGS= 10V, ID= 1.0A 3
N-ch Static Drain-Source On-Resistance RDS(ON) 70 120 mΩ VGS= 4.5V, ID= 0.5A 3
N-ch Diode Forward Voltage VSD 0.8 1.2 V VGS= 0V, IS= 3A 3
P-ch Drain-Source Breakdown Voltage BVDSS -60 V VGS = 0V, ID = -250μA 3
P-ch Zero Gate Voltage Drain Current IDSS -1 μA VDS = -60V, VGS = 0V 3
P-ch Gate-Source Leakage IGSS 100 nA VGS = ±20V, VDS = 0V 3
P-ch Gate Threshold Voltage VGS(TH) -1 -3 V VDS = VGS, ID = -250μA 3
P-ch Static Drain-Source On-Resistance RDS(ON) 120 170 mΩ VGS = -10V, ID = -1.0A 3
P-ch Static Drain-Source On-Resistance RDS(ON) 170 250 mΩ VGS = -4.5V, ID = -0.5A 3
P-ch Diode Forward Voltage VSD -0.8 -1.2 V VGS = 0V, IS = -2A 3
N-ch Drain-Source Voltage VDSS 60 V TA = +25°C 2
N-ch Gate-Source Voltage VGSS -20 20 V TA = +25°C 2
N-ch Continuous Drain Current, steady state ID 3.1 A VGS = 10V, TA = +25°C 2
N-ch Continuous Drain Current, steady state ID 2.5 A VGS = 10V, TA = +70°C 2
N-ch Continuous Drain Current, t<10s ID 4.1 A VGS = 10V, TA = +25°C 2
N-ch Continuous Drain Current, t<10s ID 3.3 A VGS = 10V, TA = +70°C 2
N-ch Body Diode Forward Current IS 2 A 2
N-ch Pulsed Drain Current IDM 15 A 10µs Pulse, Duty Cycle = 1% 2
N-ch Avalanche Current IAS 12 A L = 0.1mH 2
N-ch Avalanche Energy EAS 8 mJ L = 0.1mH 2
P-ch Drain-Source Voltage VDSS -60 V TA = +25°C 2
P-ch Gate-Source Voltage VGSS -20 20 V TA = +25°C 2
P-ch Continuous Drain Current, steady state ID -2.4 A VGS = -10V, TA = 25°C 2
P-ch Continuous Drain Current, steady state ID -1.9 A VGS = -10V, TA = 70°C 2
P-ch Continuous Drain Current, t<10s ID -3.1 A VGS = -10V, TA = 25°C 2
P-ch Continuous Drain Current, t<10s ID -2.5 A VGS = -10V, TA = 70°C 2
P-ch Body Diode Forward Current IS -2 A 2
P-ch Pulsed Drain Current IDM -12 A 10µs Pulse, Duty Cycle = 1% 2
P-ch Avalanche Current IAS -12 A L = 0.1mH 2
P-ch Avalanche Energy EAS 8 mJ L = 0.1mH 2
Total Power Dissipation PD 1.6 W TA = +25°C 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Thermal Resistance, Junction to Ambient, steady state RθJA 75 °C/W Steady State 2
Thermal Resistance, Junction to Ambient, t<10s RθJA 45 °C/W t<10s 2
Thermal Resistance, Junction to Case RθJC 11 °C/W 2
N-ch Input Capacitance CISS 731 pF VDS= 20V, VGS= 0V, f= 1MHz 3
N-ch Output Capacitance COSS 34 pF VDS= 20V, VGS= 0V, f= 1MHz 3
N-ch Reverse Transfer Capacitance CRSS 23 pF VDS= 20V, VGS= 0V, f= 1MHz 3
N-ch Gate resistance RG 1.3 Ω VDS = 0V, VGS = 0V, f = 1.0MHz 3
P-ch Input Capacitance CISS 618 pF VDS = -20V, VGS = 0V, f = 1.0MHz 3
P-ch Output Capacitance COSS 36 pF VDS = -20V, VGS = 0V, f = 1.0MHz 3
P-ch Reverse Transfer Capacitance CRSS 26 pF VDS = -20V, VGS = 0V, f = 1.0MHz 3
P-ch Gate resistance RG 13 Ω VDS = 0V, VGS = 0V, f = 1.0MHz 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC Body Diode Reverse Recovery Charge QRR  3.8  nC IS = -1.0A, dI/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 3
contacts Copper tin  Terminal Connections Indicator: See diagram  Terminals: Finish, Matte Tin Annealed over Copper Leadframe. 1

CAD (KiCad official)

  • Symbol: DMHC6070LSD-13
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: dmhc6070lsd-13-etched.step / dmhc6070lsd-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmhc6070lsd-13.step / dmhc6070lsd-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (10 pp, sha256 c76b6c8370b56608, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF