component
DMG6602SVT-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, TSOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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dmg6602svt-7: specified limits as data (metadata.characteristics, 49 rows from the datasheet)
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DMG6602SVT-7
Diodes Incorporated · MOSFETs · TSOT-26
DMG6602SVT-7 from Diodes Incorporated, in a TSOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D1 | passive | Drain of Q1 N-channel MOSFET; VDSS = 30V, RDS(on) = 60mΩ (typ.) / 100mΩ (max) at VGS = 10V / 4.5V; continuous drain current ID = 3.4A at TA = +25°C. |
| 2 | S1 | passive | Source of Q1 N-channel MOSFET; body diode forward voltage VSD = 0.8V (typ.) / 1.0V (max) at IS = 1A; maximum continuous body diode forward current IS = 1.5A. |
| 3 | D2 | passive | Drain of Q2 P-channel MOSFET; VDSS = -30V, RDS(on) = 95mΩ (typ.) / 140mΩ (max) at VGS = -10V / -4.5V; continuous drain current ID = -2.8A at TA = +25°C. |
| 4 | G2 | input | Gate of Q2 P-channel MOSFET; gate threshold voltage VGS(th) = -1.0V to -2.3V at ID = -250μA; maximum gate-source voltage VGSS = ±20V. |
| 5 | S2 | passive | Source of Q2 P-channel MOSFET; body diode forward voltage VSD = -0.8V (typ.) / -1.0V (max) at IS = -1A; maximum continuous body diode forward current IS = -1.5A. |
| 6 | G1 | input | Gate of Q1 N-channel MOSFET; gate threshold voltage VGS(th) = 1.0V to 2.3V at ID = 250μA; maximum gate-source voltage VGSS = ±20V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TSOT-26 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (Q1 NMOS) | BVDSS | 30 | V | VGS = 0V, ID = 250µA | 3 | ||
| Zero Gate Voltage Drain Current (Q1 NMOS) | IDSS | 1 | µA | VDS = 24V, VGS = 0V | 3 | ||
| Gate-Source Leakage (Q1 NMOS) | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 3 | |
| Gate Threshold Voltage (Q1 NMOS) | VGS(th) | 1 | 2.3 | V | VDS = VGS, ID = 250μA | 3 | |
| Static Drain-Source On-Resistance (Q1 NMOS) | RDS(ON) | 38 | 60 | mΩ | VGS = 10V, ID = 3.1A | 3 | |
| Static Drain-Source On-Resistance (Q1 NMOS) | RDS(ON) | 55 | 100 | mΩ | VGS = 4.5V, ID = 2A | 3 | |
| Diode Forward Voltage (Q1 NMOS) | VSD | 0.8 | 1 | V | VGS = 0V, IS = 1A | 3 | |
| Input Capacitance (Q1 NMOS) | Ciss | 290 | 400 | pF | VDS = 15V, VGS = 0V, f = 1.2MHz | 3 | |
| Output Capacitance (Q1 NMOS) | Coss | 40 | 80 | pF | VDS = 15V, VGS = 0V, f = 1.2MHz | 3 | |
| Reverse Transfer Capacitance (Q1 NMOS) | Crss | 40 | 80 | pF | VDS = 15V, VGS = 0V, f = 1.2MHz | 3 | |
| Total Gate Charge (Q1 NMOS, VGS = 4.5V) | Qg | 4 | 6 | nC | VDS = 15V, VGS = 4.5V, ID = 3.1A | 3 | |
| Total Gate Charge (Q1 NMOS, VGS = 10V) | Qg | 9 | 13 | nC | 3 | ||
| Drain-Source Breakdown Voltage (Q2 PMOS) | BVDSS | -30 | V | VGS = 0V, ID = -250µA | 6 | ||
| Zero Gate Voltage Drain Current (Q2 PMOS) | IDSS | -1 | µA | VDS = -24V, VGS = 0V | 6 | ||
| Gate-Source Leakage (Q2 PMOS) | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 6 | |
| Gate Threshold Voltage (Q2 PMOS) | VGS(th) | -1 | -2.3 | V | VDS = VGS, ID = -250μA | 6 | |
| Static Drain-Source On-Resistance (Q2 PMOS) | RDS(ON) | 73 | 95 | mΩ | VGS = -10V, ID = -2.7A | 6 | |
| Static Drain-Source On-Resistance (Q2 PMOS) | RDS(ON) | 99 | 140 | mΩ | VGS = -4.5V, ID = -2A | 6 | |
| Diode Forward Voltage (Q2 PMOS) | VSD | -0.8 | -1 | V | VGS = 0V, IS = -1A | 6 | |
| Input Capacitance (Q2 PMOS) | Ciss | 350 | 420 | pF | VDS = -15V, VGS = 0V, f = 1.2MHz | 6 | |
| Output Capacitance (Q2 PMOS) | Coss | 50 | 100 | pF | VDS = -15V, VGS = 0V, f = 1.2MHz | 6 | |
| Reverse Transfer Capacitance (Q2 PMOS) | Crss | 45 | 80 | pF | VDS = -15V, VGS = 0V, f = 1.2MHz | 6 | |
| Total Gate Charge (Q2 PMOS, VGS = -4.5V) | Qg | 4 | 6 | nC | VDS = -15V, VGS = -4.5V, ID = -3A | 6 | |
| Total Gate Charge (Q2 PMOS, VGS = -10V) | Qg | 7 | 9 | nC | 6 | ||
| Drain-Source Voltage (Q1 NMOS) | VDSS | 30 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage (Q1 NMOS) | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current (Q1 NMOS) | ID | 3.4 | A | VGS = 10V, steady state, TA = +25°C (note 6) | 2 | ||
| Continuous Drain Current (Q1 NMOS) | ID | 2.7 | A | VGS = 10V, steady state, TA = +70°C (note 6) | 2 | ||
| Continuous Drain Current (Q1 NMOS) | ID | 2.2 | A | VGS = 4.5V, steady state, TA = +70°C (note 6) | 2 | ||
| Maximum Continuous Body Diode Forward Current (Q1 NMOS) | IS | 1.5 | A | note 6 | 2 | ||
| Pulsed Drain Current (Q1 NMOS) | IDM | 25 | A | note 6 | 2 | ||
| Drain-Source Voltage (Q2 PMOS) | VDSS | -30 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage (Q2 PMOS) | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current (Q2 PMOS) | ID | -2.8 | A | VGS = -10V, steady state, TA = +25°C (note 6) | 2 | ||
| Continuous Drain Current (Q2 PMOS) | ID | -2.4 | A | VGS = -10V, steady state, TA = +70°C (note 6) | 2 | ||
| Continuous Drain Current (Q2 PMOS) | ID | -2.3 | A | VGS = -4.5V, steady state, TA = +25°C (note 6) | 2 | ||
| Continuous Drain Current (Q2 PMOS) | ID | -2.1 | A | VGS = -4.5V, steady state, TA = +70°C (note 6) | 2 | ||
| Maximum Continuous Body Diode Forward Current (Q2 PMOS) | IS | -1.5 | A | note 6 | 2 | ||
| Pulsed Drain Current (Q2 PMOS) | ID | -20 | A | Pulsed, note 6 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Total Power Dissipation | PD | 0.84 | W | TA = +25°C, note 5 (minimum pad layout) | 2 | ||
| Total Power Dissipation | PD | 0.52 | W | TA = +70°C, note 5 (minimum pad layout) | 2 | ||
| Total Power Dissipation | PD | 1.27 | W | TA = +25°C, note 6 (1 inch square copper plate) | 2 | ||
| Total Power Dissipation | PD | 0.8 | W | TA = +70°C, note 6 (1 inch square copper plate) | 2 | ||
| Thermal Resistance, Junction to Ambient | RϴJA | 155 | °C/W | Steady state, note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient | RϴJA | 109 | °C/W | t < 10s, note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient | RϴJA | 102 | °C/W | Steady state, note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient | RϴJA | 71 | °C/W | t < 10s, note 6 | 2 | ||
| Thermal Resistance, Junction to Case | RϴJC | 34 | °C/W | note 6 | 2 |
CAD (KiCad official)
- Symbol:
DMG6602SVT-7 - Footprint:
Package_TO_SOT_SMD:TSOT-23-6 - 3D model: TSOT-26 (KiCad packages3D, STEP)
- 3D model files:
dmg6602svt-7-etched.step/dmg6602svt-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmg6602svt-7.step/dmg6602svt-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (10 pp, sha256
cd7065b693c48e9d, retrieved 2026-09-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-4-6(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMG6602SVT-7
**Diodes Incorporated** · MOSFETs · TSOT-26
DMG6602SVT-7 from Diodes Incorporated, in a TSOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D1 | passive | Drain of Q1 N-channel MOSFET; VDSS = 30V, RDS(on) = 60mΩ (typ.) / 100mΩ (max) at VGS = 10V / 4.5V; continuous drain current ID = 3.4A at TA = +25°C. |
| 2 | S1 | passive | Source of Q1 N-channel MOSFET; body diode forward voltage VSD = 0.8V (typ.) / 1.0V (max) at IS = 1A; maximum continuous body diode forward current IS = 1.5A. |
| 3 | D2 | passive | Drain of Q2 P-channel MOSFET; VDSS = -30V, RDS(on) = 95mΩ (typ.) / 140mΩ (max) at VGS = -10V / -4.5V; continuous drain current ID = -2.8A at TA = +25°C. |
| 4 | G2 | input | Gate of Q2 P-channel MOSFET; gate threshold voltage VGS(th) = -1.0V to -2.3V at ID = -250μA; maximum gate-source voltage VGSS = ±20V. |
| 5 | S2 | passive | Source of Q2 P-channel MOSFET; body diode forward voltage VSD = -0.8V (typ.) / -1.0V (max) at IS = -1A; maximum continuous body diode forward current IS = -1.5A. |
| 6 | G1 | input | Gate of Q1 N-channel MOSFET; gate threshold voltage VGS(th) = 1.0V to 2.3V at ID = 250μA; maximum gate-source voltage VGSS = ±20V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TSOT-26 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (Q1 NMOS) | BVDSS | 30 | | | V | VGS = 0V, ID = 250µA | 3 |
| Zero Gate Voltage Drain Current (Q1 NMOS) | IDSS | | | 1 | µA | VDS = 24V, VGS = 0V | 3 |
| Gate-Source Leakage (Q1 NMOS) | IGSS | -100 | | 100 | nA | VGS = ±20V, VDS = 0V | 3 |
| Gate Threshold Voltage (Q1 NMOS) | VGS(th) | 1 | | 2.3 | V | VDS = VGS, ID = 250μA | 3 |
| Static Drain-Source On-Resistance (Q1 NMOS) | RDS(ON) | | 38 | 60 | mΩ | VGS = 10V, ID = 3.1A | 3 |
| Static Drain-Source On-Resistance (Q1 NMOS) | RDS(ON) | | 55 | 100 | mΩ | VGS = 4.5V, ID = 2A | 3 |
| Diode Forward Voltage (Q1 NMOS) | VSD | | 0.8 | 1 | V | VGS = 0V, IS = 1A | 3 |
| Input Capacitance (Q1 NMOS) | Ciss | | 290 | 400 | pF | VDS = 15V, VGS = 0V, f = 1.2MHz | 3 |
| Output Capacitance (Q1 NMOS) | Coss | | 40 | 80 | pF | VDS = 15V, VGS = 0V, f = 1.2MHz | 3 |
| Reverse Transfer Capacitance (Q1 NMOS) | Crss | | 40 | 80 | pF | VDS = 15V, VGS = 0V, f = 1.2MHz | 3 |
| Total Gate Charge (Q1 NMOS, VGS = 4.5V) | Qg | | 4 | 6 | nC | VDS = 15V, VGS = 4.5V, ID = 3.1A | 3 |
| Total Gate Charge (Q1 NMOS, VGS = 10V) | Qg | | 9 | 13 | nC | | 3 |
| Drain-Source Breakdown Voltage (Q2 PMOS) | BVDSS | -30 | | | V | VGS = 0V, ID = -250µA | 6 |
| Zero Gate Voltage Drain Current (Q2 PMOS) | IDSS | | | -1 | µA | VDS = -24V, VGS = 0V | 6 |
| Gate-Source Leakage (Q2 PMOS) | IGSS | -100 | | 100 | nA | VGS = ±20V, VDS = 0V | 6 |
| Gate Threshold Voltage (Q2 PMOS) | VGS(th) | -1 | | -2.3 | V | VDS = VGS, ID = -250μA | 6 |
| Static Drain-Source On-Resistance (Q2 PMOS) | RDS(ON) | | 73 | 95 | mΩ | VGS = -10V, ID = -2.7A | 6 |
| Static Drain-Source On-Resistance (Q2 PMOS) | RDS(ON) | | 99 | 140 | mΩ | VGS = -4.5V, ID = -2A | 6 |
| Diode Forward Voltage (Q2 PMOS) | VSD | | -0.8 | -1 | V | VGS = 0V, IS = -1A | 6 |
| Input Capacitance (Q2 PMOS) | Ciss | | 350 | 420 | pF | VDS = -15V, VGS = 0V, f = 1.2MHz | 6 |
| Output Capacitance (Q2 PMOS) | Coss | | 50 | 100 | pF | VDS = -15V, VGS = 0V, f = 1.2MHz | 6 |
| Reverse Transfer Capacitance (Q2 PMOS) | Crss | | 45 | 80 | pF | VDS = -15V, VGS = 0V, f = 1.2MHz | 6 |
| Total Gate Charge (Q2 PMOS, VGS = -4.5V) | Qg | | 4 | 6 | nC | VDS = -15V, VGS = -4.5V, ID = -3A | 6 |
| Total Gate Charge (Q2 PMOS, VGS = -10V) | Qg | | 7 | 9 | nC | | 6 |
| Drain-Source Voltage (Q1 NMOS) | VDSS | | | 30 | V | TA = +25°C | 2 |
| Gate-Source Voltage (Q1 NMOS) | VGSS | -20 | | 20 | V | | 2 |
| Continuous Drain Current (Q1 NMOS) | ID | | | 3.4 | A | VGS = 10V, steady state, TA = +25°C (note 6) | 2 |
| Continuous Drain Current (Q1 NMOS) | ID | | | 2.7 | A | VGS = 10V, steady state, TA = +70°C (note 6) | 2 |
| Continuous Drain Current (Q1 NMOS) | ID | | | 2.2 | A | VGS = 4.5V, steady state, TA = +70°C (note 6) | 2 |
| Maximum Continuous Body Diode Forward Current (Q1 NMOS) | IS | | | 1.5 | A | note 6 | 2 |
| Pulsed Drain Current (Q1 NMOS) | IDM | | | 25 | A | note 6 | 2 |
| Drain-Source Voltage (Q2 PMOS) | VDSS | -30 | | | V | TA = +25°C | 2 |
| Gate-Source Voltage (Q2 PMOS) | VGSS | -20 | | 20 | V | | 2 |
| Continuous Drain Current (Q2 PMOS) | ID | -2.8 | | | A | VGS = -10V, steady state, TA = +25°C (note 6) | 2 |
| Continuous Drain Current (Q2 PMOS) | ID | -2.4 | | | A | VGS = -10V, steady state, TA = +70°C (note 6) | 2 |
| Continuous Drain Current (Q2 PMOS) | ID | -2.3 | | | A | VGS = -4.5V, steady state, TA = +25°C (note 6) | 2 |
| Continuous Drain Current (Q2 PMOS) | ID | -2.1 | | | A | VGS = -4.5V, steady state, TA = +70°C (note 6) | 2 |
| Maximum Continuous Body Diode Forward Current (Q2 PMOS) | IS | -1.5 | | | A | note 6 | 2 |
| Pulsed Drain Current (Q2 PMOS) | ID | -20 | | | A | Pulsed, note 6 | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
| Total Power Dissipation | PD | | 0.84 | | W | TA = +25°C, note 5 (minimum pad layout) | 2 |
| Total Power Dissipation | PD | | 0.52 | | W | TA = +70°C, note 5 (minimum pad layout) | 2 |
| Total Power Dissipation | PD | | 1.27 | | W | TA = +25°C, note 6 (1 inch square copper plate) | 2 |
| Total Power Dissipation | PD | | 0.8 | | W | TA = +70°C, note 6 (1 inch square copper plate) | 2 |
| Thermal Resistance, Junction to Ambient | RϴJA | | 155 | | °C/W | Steady state, note 5 | 2 |
| Thermal Resistance, Junction to Ambient | RϴJA | | 109 | | °C/W | t < 10s, note 5 | 2 |
| Thermal Resistance, Junction to Ambient | RϴJA | | 102 | | °C/W | Steady state, note 6 | 2 |
| Thermal Resistance, Junction to Ambient | RϴJA | | 71 | | °C/W | t < 10s, note 6 | 2 |
| Thermal Resistance, Junction to Case | RϴJC | | 34 | | °C/W | note 6 | 2 |
## CAD (KiCad official)
- Symbol: `DMG6602SVT-7`
- Footprint: `Package_TO_SOT_SMD:TSOT-23-6`
- 3D model: TSOT-26 (KiCad packages3D, STEP)
- 3D model files: `dmg6602svt-7-etched.step` / `dmg6602svt-7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmg6602svt-7.step` / `dmg6602svt-7.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8560078639628124160) (10 pp, sha256 `cd7065b693c48e9d`, retrieved 2026-09-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-4-6` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmg6602svt-7-datasheet.pdf)