component
DMG6602SVT-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, TSOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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dmg6602svt-7: specified limits as data (metadata.characteristics, 49 rows from the datasheet)
2 files changed
+651
README.md+56@@ -24,6 +24,62 @@ DMG6602SVT-7 from Diodes Incorporated, in a TSOT-26. Pinout and pin descriptions | Category | Transistors/Thyristors | | Pins | 6 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Breakdown Voltage (Q1 NMOS) | BVDSS | 30 | | | V | VGS = 0V, ID = 250µA | 3 |+| Zero Gate Voltage Drain Current (Q1 NMOS) | IDSS | | | 1 | µA | VDS = 24V, VGS = 0V | 3 |+| Gate-Source Leakage (Q1 NMOS) | IGSS | -100 | | 100 | nA | VGS = ±20V, VDS = 0V | 3 |+| Gate Threshold Voltage (Q1 NMOS) | VGS(th) | 1 | | 2.3 | V | VDS = VGS, ID = 250μA | 3 |+| Static Drain-Source On-Resistance (Q1 NMOS) | RDS(ON) | | 38 | 60 | mΩ | VGS = 10V, ID = 3.1A | 3 |+| Static Drain-Source On-Resistance (Q1 NMOS) | RDS(ON) | | 55 | 100 | mΩ | VGS = 4.5V, ID = 2A | 3 |+| Diode Forward Voltage (Q1 NMOS) | VSD | | 0.8 | 1 | V | VGS = 0V, IS = 1A | 3 |+| Input Capacitance (Q1 NMOS) | Ciss | | 290 | 400 | pF | VDS = 15V, VGS = 0V, f = 1.2MHz | 3 |+| Output Capacitance (Q1 NMOS) | Coss | | 40 | 80 | pF | VDS = 15V, VGS = 0V, f = 1.2MHz | 3 |+| Reverse Transfer Capacitance (Q1 NMOS) | Crss | | 40 | 80 | pF | VDS = 15V, VGS = 0V, f = 1.2MHz | 3 |+| Total Gate Charge (Q1 NMOS, VGS = 4.5V) | Qg | | 4 | 6 | nC | VDS = 15V, VGS = 4.5V, ID = 3.1A | 3 |+| Total Gate Charge (Q1 NMOS, VGS = 10V) | Qg | | 9 | 13 | nC | | 3 |+| Drain-Source Breakdown Voltage (Q2 PMOS) | BVDSS | -30 | | | V | VGS = 0V, ID = -250µA | 6 |+| Zero Gate Voltage Drain Current (Q2 PMOS) | IDSS | | | -1 | µA | VDS = -24V, VGS = 0V | 6 |+| Gate-Source Leakage (Q2 PMOS) | IGSS | -100 | | 100 | nA | VGS = ±20V, VDS = 0V | 6 |+| Gate Threshold Voltage (Q2 PMOS) | VGS(th) | -1 | | -2.3 | V | VDS = VGS, ID = -250μA | 6 |+| Static Drain-Source On-Resistance (Q2 PMOS) | RDS(ON) | | 73 | 95 | mΩ | VGS = -10V, ID = -2.7A | 6 |+| Static Drain-Source On-Resistance (Q2 PMOS) | RDS(ON) | | 99 | 140 | mΩ | VGS = -4.5V, ID = -2A | 6 |+| Diode Forward Voltage (Q2 PMOS) | VSD | | -0.8 | -1 | V | VGS = 0V, IS = -1A | 6 |+| Input Capacitance (Q2 PMOS) | Ciss | | 350 | 420 | pF | VDS = -15V, VGS = 0V, f = 1.2MHz | 6 |+| Output Capacitance (Q2 PMOS) | Coss | | 50 | 100 | pF | VDS = -15V, VGS = 0V, f = 1.2MHz | 6 |+| Reverse Transfer Capacitance (Q2 PMOS) | Crss | | 45 | 80 | pF | VDS = -15V, VGS = 0V, f = 1.2MHz | 6 |+| Total Gate Charge (Q2 PMOS, VGS = -4.5V) | Qg | | 4 | 6 | nC | VDS = -15V, VGS = -4.5V, ID = -3A | 6 |+| Total Gate Charge (Q2 PMOS, VGS = -10V) | Qg | | 7 | 9 | nC | | 6 |+| Drain-Source Voltage (Q1 NMOS) | VDSS | | | 30 | V | TA = +25°C | 2 |+| Gate-Source Voltage (Q1 NMOS) | VGSS | -20 | | 20 | V | | 2 |+| Continuous Drain Current (Q1 NMOS) | ID | | | 3.4 | A | VGS = 10V, steady state, TA = +25°C (note 6) | 2 |+| Continuous Drain Current (Q1 NMOS) | ID | | | 2.7 | A | VGS = 10V, steady state, TA = +70°C (note 6) | 2 |+| Continuous Drain Current (Q1 NMOS) | ID | | | 2.2 | A | VGS = 4.5V, steady state, TA = +70°C (note 6) | 2 |+| Maximum Continuous Body Diode Forward Current (Q1 NMOS) | IS | | | 1.5 | A | note 6 | 2 |+| Pulsed Drain Current (Q1 NMOS) | IDM | | | 25 | A | note 6 | 2 |+| Drain-Source Voltage (Q2 PMOS) | VDSS | -30 | | | V | TA = +25°C | 2 |+| Gate-Source Voltage (Q2 PMOS) | VGSS | -20 | | 20 | V | | 2 |+| Continuous Drain Current (Q2 PMOS) | ID | -2.8 | | | A | VGS = -10V, steady state, TA = +25°C (note 6) | 2 |+| Continuous Drain Current (Q2 PMOS) | ID | -2.4 | | | A | VGS = -10V, steady state, TA = +70°C (note 6) | 2 |+| Continuous Drain Current (Q2 PMOS) | ID | -2.3 | | | A | VGS = -4.5V, steady state, TA = +25°C (note 6) | 2 |+| Continuous Drain Current (Q2 PMOS) | ID | -2.1 | | | A | VGS = -4.5V, steady state, TA = +70°C (note 6) | 2 |+| Maximum Continuous Body Diode Forward Current (Q2 PMOS) | IS | -1.5 | | | A | note 6 | 2 |+| Pulsed Drain Current (Q2 PMOS) | ID | -20 | | | A | Pulsed, note 6 | 2 |+| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |+| Total Power Dissipation | PD | | 0.84 | | W | TA = +25°C, note 5 (minimum pad layout) | 2 |+| Total Power Dissipation | PD | | 0.52 | | W | TA = +70°C, note 5 (minimum pad layout) | 2 |+| Total Power Dissipation | PD | | 1.27 | | W | TA = +25°C, note 6 (1 inch square copper plate) | 2 |+| Total Power Dissipation | PD | | 0.8 | | W | TA = +70°C, note 6 (1 inch square copper plate) | 2 |+| Thermal Resistance, Junction to Ambient | RϴJA | | 155 | | °C/W | Steady state, note 5 | 2 |+| Thermal Resistance, Junction to Ambient | RϴJA | | 109 | | °C/W | t < 10s, note 5 | 2 |+| Thermal Resistance, Junction to Ambient | RϴJA | | 102 | | °C/W | Steady state, note 6 | 2 |+| Thermal Resistance, Junction to Ambient | RϴJA | | 71 | | °C/W | t < 10s, note 6 | 2 |+| Thermal Resistance, Junction to Case | RϴJC | | 34 | | °C/W | note 6 | 2 |+ ## CAD (KiCad official) - Symbol: `DMG6602SVT-7`
page.json+595@@ -151,6 +151,601 @@ "Package": "TSOT-26", "Category": "Transistors/Thyristors", "Pins": "6"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "cd7065b693c48e9d",+ "rows": [+ {+ "name": "Drain-Source Breakdown Voltage (Q1 NMOS)",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID = 250µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (Q1 NMOS)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 24V, VGS = 0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage (Q1 NMOS)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS = ±20V, VDS = 0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage (Q1 NMOS)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": null,+ "max": 2.3,+ "conditions": "VDS = VGS, ID = 250μA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance (Q1 NMOS)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 38,+ "max": 60,+ "conditions": "VGS = 10V, ID = 3.1A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance (Q1 NMOS)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 55,+ "max": 100,+ "conditions": "VGS = 4.5V, ID = 2A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage (Q1 NMOS)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.8,+ "max": 1,+ "conditions": "VGS = 0V, IS = 1A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance (Q1 NMOS)",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 290,+ "max": 400,+ "conditions": "VDS = 15V, VGS = 0V, f = 1.2MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance (Q1 NMOS)",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 40,+ "max": 80,+ "conditions": "VDS = 15V, VGS = 0V, f = 1.2MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance (Q1 NMOS)",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 40,+ "max": 80,+ "conditions": "VDS = 15V, VGS = 0V, f = 1.2MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (Q1 NMOS, VGS = 4.5V)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 4,+ "max": 6,+ "conditions": "VDS = 15V, VGS = 4.5V, ID = 3.1A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (Q1 NMOS, VGS = 10V)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 9,+ "max": 13,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage (Q2 PMOS)",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID = -250µA",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (Q2 PMOS)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS = -24V, VGS = 0V",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage (Q2 PMOS)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS = ±20V, VDS = 0V",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage (Q2 PMOS)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": null,+ "max": -2.3,+ "conditions": "VDS = VGS, ID = -250μA",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance (Q2 PMOS)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 73,+ "max": 95,+ "conditions": "VGS = -10V, ID = -2.7A",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance (Q2 PMOS)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 99,+ "max": 140,+ "conditions": "VGS = -4.5V, ID = -2A",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage (Q2 PMOS)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.8,+ "max": -1,+ "conditions": "VGS = 0V, IS = -1A",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance (Q2 PMOS)",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 350,+ "max": 420,+ "conditions": "VDS = -15V, VGS = 0V, f = 1.2MHz",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance (Q2 PMOS)",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 50,+ "max": 100,+ "conditions": "VDS = -15V, VGS = 0V, f = 1.2MHz",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance (Q2 PMOS)",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 45,+ "max": 80,+ "conditions": "VDS = -15V, VGS = 0V, f = 1.2MHz",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (Q2 PMOS, VGS = -4.5V)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 4,+ "max": 6,+ "conditions": "VDS = -15V, VGS = -4.5V, ID = -3A",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (Q2 PMOS, VGS = -10V)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 7,+ "max": 9,+ "conditions": "",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage (Q1 NMOS)",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "TA = +25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (Q1 NMOS)",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Q1 NMOS)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3.4,+ "conditions": "VGS = 10V, steady state, TA = +25°C (note 6)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Q1 NMOS)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.7,+ "conditions": "VGS = 10V, steady state, TA = +70°C (note 6)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Q1 NMOS)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.2,+ "conditions": "VGS = 4.5V, steady state, TA = +70°C (note 6)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Continuous Body Diode Forward Current (Q1 NMOS)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.5,+ "conditions": "note 6",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (Q1 NMOS)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "note 6",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage (Q2 PMOS)",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "TA = +25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (Q2 PMOS)",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Q2 PMOS)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -2.8,+ "typ": null,+ "max": null,+ "conditions": "VGS = -10V, steady state, TA = +25°C (note 6)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Q2 PMOS)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -2.4,+ "typ": null,+ "max": null,+ "conditions": "VGS = -10V, steady state, TA = +70°C (note 6)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Q2 PMOS)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -2.3,+ "typ": null,+ "max": null,+ "conditions": "VGS = -4.5V, steady state, TA = +25°C (note 6)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Q2 PMOS)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -2.1,+ "typ": null,+ "max": null,+ "conditions": "VGS = -4.5V, steady state, TA = +70°C (note 6)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Continuous Body Diode Forward Current (Q2 PMOS)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -1.5,+ "typ": null,+ "max": null,+ "conditions": "note 6",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (Q2 PMOS)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "Pulsed, note 6",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "thermal",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Power Dissipation",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "W",+ "min": null,+ "typ": 0.84,+ "max": null,+ "conditions": "TA = +25°C, note 5 (minimum pad layout)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Power Dissipation",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "W",+ "min": null,+ "typ": 0.52,+ "max": null,+ "conditions": "TA = +70°C, note 5 (minimum pad layout)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Power Dissipation",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "W",+ "min": null,+ "typ": 1.27,+ "max": null,+ "conditions": "TA = +25°C, note 6 (1 inch square copper plate)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Power Dissipation",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "W",+ "min": null,+ "typ": 0.8,+ "max": null,+ "conditions": "TA = +70°C, note 6 (1 inch square copper plate)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient",+ "symbol": "RϴJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 155,+ "max": null,+ "conditions": "Steady state, note 5",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient",+ "symbol": "RϴJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 109,+ "max": null,+ "conditions": "t < 10s, note 5",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient",+ "symbol": "RϴJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 102,+ "max": null,+ "conditions": "Steady state, note 6",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient",+ "symbol": "RϴJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 71,+ "max": null,+ "conditions": "t < 10s, note 6",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Case",+ "symbol": "RϴJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 34,+ "max": null,+ "conditions": "note 6",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],