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DMC3025LSD-VB
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VBsemi Elec MOSFETs, SO-8. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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dmc3025lsd-vb: specified limits as data (metadata.characteristics, 62 rows from the datasheet)
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24d ago
DMC3025LSD-VB
VBsemi Elec · MOSFETs · SO-8
DMC3025LSD-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of N-channel MOSFET (Q1). Continuous drain current up to 8 A at TC = 25 °C; body-diode forward voltage ~0.81 V at IS = 5.4 A. |
| 2 | G1 | input | Gate of N-channel MOSFET (Q1). VGS(th) typ. 1.0-2.0 V; VGS absolute maximum ±20 V. Drive with 4.5 V / 8 V / 10 V per RDS(on) spec. |
| 3 | S2 | passive | Source of P-channel MOSFET (Q2). Continuous drain current up to -8 A at TC = 25 °C; body-diode forward voltage ~-0.77 V at IS = -2 A. |
| 4 | G2 | input | Gate of P-channel MOSFET (Q2). VGS(th) typ. -1.0 to -2.0 V; VGS absolute maximum ±20 V. Drive with -4.5 V / -8 V / -10 V per RDS(on) spec. |
| 5 | D2 | passive | Drain of P-channel MOSFET (Q2). VDS absolute maximum -30 V. Ganged with pin 6 internally to lower on-resistance and improve thermal performance. |
| 6 | D2 | passive | Drain of P-channel MOSFET (Q2). VDS absolute maximum -30 V. Ganged with pin 5 internally to lower on-resistance and improve thermal performance. |
| 7 | D1 | passive | Drain of N-channel MOSFET (Q1). VDS absolute maximum 30 V. Ganged with pin 8 internally to lower on-resistance and improve thermal performance. |
| 8 | D1 | passive | Drain of N-channel MOSFET (Q1). VDS absolute maximum 30 V. Ganged with pin 7 internally to lower on-resistance and improve thermal performance. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Ordering variants
Same part, different packaging or reel option.
DMC3025LSD-VB
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDS | 30 | V | N-channel; TA = 25 °C unless otherwise noted | 1 | ||
| Drain-Source Voltage (P-channel) | VDS | -30 | V | P-channel; TA = 25 °C unless otherwise noted | 1 | ||
| Gate-Source Voltage (N-channel) | VGS | -20 | 20 | V | N-channel; TA = 25 °C unless otherwise noted | 1 | |
| Gate-Source Voltage (P-channel) | VGS | -20 | 20 | V | P-channel; TA = 25 °C unless otherwise noted | 1 | |
| Continuous Drain Current (N-channel) | ID | 8 | A | TC = 25 °C (TJ = 150 °C) | 1 | ||
| Continuous Drain Current (P-channel) | ID | -8 | A | TC = 25 °C (TJ = 150 °C) | 1 | ||
| Continuous Drain Current (N-channel) | ID | 6.8 | A | TC = 70 °C | 1 | ||
| Continuous Drain Current (P-channel) | ID | -6.8 | A | TC = 70 °C | 1 | ||
| Continuous Drain Current (P-channel) | ID | -6.6 | A | TA = 25 °C (note b, c) | 1 | ||
| Continuous Drain Current (N-channel) | ID | 5.4 | A | TA = 70 °C (note b, c) | 1 | ||
| Continuous Drain Current (P-channel) | ID | -5.3 | A | TA = 70 °C (note b, c) | 1 | ||
| Pulsed Drain Current (N-channel) | IDM | 40 | A | 10 µs pulse width | 1 | ||
| Pulsed Drain Current (P-channel) | IDM | -40 | A | 10 µs pulse width | 1 | ||
| Source-Drain Diode Current (N-channel) | IS | 2.6 | A | TC = 25 °C | 1 | ||
| Source-Drain Diode Current (P-channel) | IS | -2.6 | A | TC = 25 °C | 1 | ||
| Source-Drain Diode Current (N-channel) | IS | 1.6 | A | TA = 25 °C (note b, c) | 1 | ||
| Source-Drain Diode Current (P-channel) | IS | -1.6 | A | TA = 25 °C (note b, c) | 1 | ||
| Pulsed Source-Drain Current (N-channel) | ISM | 40 | A | 1 | |||
| Pulsed Source-Drain Current (P-channel) | ISM | -40 | A | 1 | |||
| Single Pulse Avalanche Current (N-channel) | IAS | 10 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Current (P-channel) | IAS | -20 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy (N-channel) | EAS | 5 | mJ | 1 | |||
| Single Pulse Avalanche Energy (P-channel) | EAS | 20 | mJ | 1 | |||
| Maximum Power Dissipation (N-channel) | PD | 3.1 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation (P-channel) | PD | 3.2 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation (N-channel) | PD | 2 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation (P-channel) | PD | 2.1 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation (P-channel) | PD | 2 | W | TA = 25 °C (note b, c) | 1 | ||
| Maximum Power Dissipation (N-channel) | PD | 1.28 | W | TA = 70 °C (note b, c) | 1 | ||
| Maximum Power Dissipation (P-channel) | PD | 1.28 | W | TA = 70 °C (note b, c) | 1 | ||
| Operating Junction and Storage Temperature Range (both channels) | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (N-channel) | RthJA | 50 | 62.5 | °C/W | t ≤ 10 s (notes b, d) | 1 | |
| Maximum Junction-to-Ambient (P-channel) | RthJA | 47 | 62.5 | °C/W | t ≤ 10 s (notes b, d) | 1 | |
| Maximum Junction-to-Ambient steady state (N-channel) | RthJA | 120 | °C/W | steady state (note d) | 1 | ||
| Maximum Junction-to-Ambient steady state (P-channel) | RthJA | 110 | °C/W | steady state (note d) | 1 | ||
| Maximum Junction-to-Foot (Drain) steady state (N-channel) | RthJF | 30 | 40 | °C/W | steady state | 1 | |
| Maximum Junction-to-Foot (Drain) steady state (P-channel) | RthJF | 29 | 38 | °C/W | steady state | 1 | |
| Drain-Source Breakdown Voltage (N-channel) | VDS | 30 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Drain-Source Breakdown Voltage (P-channel) | VDS | -30 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate Threshold Voltage (N-channel) | VGS(th) | 1 | 2 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate Threshold Voltage (P-channel) | VGS(th) | -1 | -2 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Body Leakage (N-channel) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 | |
| Gate-Body Leakage (P-channel) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 | |
| Zero Gate Voltage Drain Current (N-channel) | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (N-channel) | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -10 | µA | VDS = -30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current (N-channel) | ID(on) | 20 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| On-State Drain Current (P-channel) | ID(on) | -20 | A | VDS = -5 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance (P-channel) | RDS(on) | 0.04 | Ω | VGS = -10 V, ID = -8 A | 2 | ||
| Drain-Source On-State Resistance (N-channel) | RDS(on) | 0.02 | Ω | VGS = 8 V, ID = 6.7 A | 2 | ||
| Drain-Source On-State Resistance (P-channel) | RDS(on) | 0.044 | Ω | VGS = -8 V, ID = -6.5 A | 2 | ||
| Drain-Source On-State Resistance (N-channel) | RDS(on) | 0.024 | Ω | VGS = 4.5 V, ID = 6.6 A | 2 | ||
| Drain-Source On-State Resistance (P-channel) | RDS(on) | 0.05 | Ω | VGS = -4.5 V, ID = -5 A | 2 | ||
| Body Diode Forward Voltage (N-channel) | VSD | 0.81 | 1.2 | V | IS = 5.4 A | 3 | |
| Body Diode Forward Voltage (P-channel) | VSD | -0.77 | -1.2 | V | IS = -2 A | 3 | |
| Turn-On Delay Time (N-channel) | td(on) | 4 | 8 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω | 3 | |
| Turn-On Delay Time (P-channel) | td(on) | 10 | 16 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω | 3 | |
| Rise Time (N-channel) | tr | 10 | 17 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω | 3 | |
| Rise Time (P-channel) | tr | 9 | 15 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω | 3 | |
| Forward Transconductance (N-channel) | gfs | 27 | S | VDS = 15 V, ID = 6.8 A | 2 | ||
| Forward Transconductance (P-channel) | gfs | 25 | S | VDS = -15 V, ID = -6.7 A | 2 |
CAD (KiCad official)
- Symbol:
DMC3025LSD-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
dmc3025lsd-vb-etched.step/dmc3025lsd-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmc3025lsd-vb.step/dmc3025lsd-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (None pp, sha256
4873783440de19fc, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMC3025LSD-VB
**VBsemi Elec** · MOSFETs · SO-8
DMC3025LSD-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of N-channel MOSFET (Q1). Continuous drain current up to 8 A at TC = 25 °C; body-diode forward voltage ~0.81 V at IS = 5.4 A. |
| 2 | G1 | input | Gate of N-channel MOSFET (Q1). VGS(th) typ. 1.0-2.0 V; VGS absolute maximum ±20 V. Drive with 4.5 V / 8 V / 10 V per RDS(on) spec. |
| 3 | S2 | passive | Source of P-channel MOSFET (Q2). Continuous drain current up to -8 A at TC = 25 °C; body-diode forward voltage ~-0.77 V at IS = -2 A. |
| 4 | G2 | input | Gate of P-channel MOSFET (Q2). VGS(th) typ. -1.0 to -2.0 V; VGS absolute maximum ±20 V. Drive with -4.5 V / -8 V / -10 V per RDS(on) spec. |
| 5 | D2 | passive | Drain of P-channel MOSFET (Q2). VDS absolute maximum -30 V. Ganged with pin 6 internally to lower on-resistance and improve thermal performance. |
| 6 | D2 | passive | Drain of P-channel MOSFET (Q2). VDS absolute maximum -30 V. Ganged with pin 5 internally to lower on-resistance and improve thermal performance. |
| 7 | D1 | passive | Drain of N-channel MOSFET (Q1). VDS absolute maximum 30 V. Ganged with pin 8 internally to lower on-resistance and improve thermal performance. |
| 8 | D1 | passive | Drain of N-channel MOSFET (Q1). VDS absolute maximum 30 V. Ganged with pin 7 internally to lower on-resistance and improve thermal performance. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Ordering variants
Same part, different packaging or reel option.
- `DMC3025LSD-VB`
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDS | | | 30 | V | N-channel; TA = 25 °C unless otherwise noted | 1 |
| Drain-Source Voltage (P-channel) | VDS | -30 | | | V | P-channel; TA = 25 °C unless otherwise noted | 1 |
| Gate-Source Voltage (N-channel) | VGS | -20 | | 20 | V | N-channel; TA = 25 °C unless otherwise noted | 1 |
| Gate-Source Voltage (P-channel) | VGS | -20 | | 20 | V | P-channel; TA = 25 °C unless otherwise noted | 1 |
| Continuous Drain Current (N-channel) | ID | | | 8 | A | TC = 25 °C (TJ = 150 °C) | 1 |
| Continuous Drain Current (P-channel) | ID | -8 | | | A | TC = 25 °C (TJ = 150 °C) | 1 |
| Continuous Drain Current (N-channel) | ID | | | 6.8 | A | TC = 70 °C | 1 |
| Continuous Drain Current (P-channel) | ID | -6.8 | | | A | TC = 70 °C | 1 |
| Continuous Drain Current (P-channel) | ID | -6.6 | | | A | TA = 25 °C (note b, c) | 1 |
| Continuous Drain Current (N-channel) | ID | | | 5.4 | A | TA = 70 °C (note b, c) | 1 |
| Continuous Drain Current (P-channel) | ID | -5.3 | | | A | TA = 70 °C (note b, c) | 1 |
| Pulsed Drain Current (N-channel) | IDM | | | 40 | A | 10 µs pulse width | 1 |
| Pulsed Drain Current (P-channel) | IDM | -40 | | | A | 10 µs pulse width | 1 |
| Source-Drain Diode Current (N-channel) | IS | | | 2.6 | A | TC = 25 °C | 1 |
| Source-Drain Diode Current (P-channel) | IS | -2.6 | | | A | TC = 25 °C | 1 |
| Source-Drain Diode Current (N-channel) | IS | | | 1.6 | A | TA = 25 °C (note b, c) | 1 |
| Source-Drain Diode Current (P-channel) | IS | -1.6 | | | A | TA = 25 °C (note b, c) | 1 |
| Pulsed Source-Drain Current (N-channel) | ISM | | | 40 | A | | 1 |
| Pulsed Source-Drain Current (P-channel) | ISM | -40 | | | A | | 1 |
| Single Pulse Avalanche Current (N-channel) | IAS | | | 10 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Current (P-channel) | IAS | -20 | | | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy (N-channel) | EAS | | | 5 | mJ | | 1 |
| Single Pulse Avalanche Energy (P-channel) | EAS | | | 20 | mJ | | 1 |
| Maximum Power Dissipation (N-channel) | PD | | | 3.1 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation (P-channel) | PD | | | 3.2 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation (N-channel) | PD | | | 2 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation (P-channel) | PD | | | 2.1 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation (P-channel) | PD | | | 2 | W | TA = 25 °C (note b, c) | 1 |
| Maximum Power Dissipation (N-channel) | PD | | | 1.28 | W | TA = 70 °C (note b, c) | 1 |
| Maximum Power Dissipation (P-channel) | PD | | | 1.28 | W | TA = 70 °C (note b, c) | 1 |
| Operating Junction and Storage Temperature Range (both channels) | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient (N-channel) | RthJA | | 50 | 62.5 | °C/W | t ≤ 10 s (notes b, d) | 1 |
| Maximum Junction-to-Ambient (P-channel) | RthJA | | 47 | 62.5 | °C/W | t ≤ 10 s (notes b, d) | 1 |
| Maximum Junction-to-Ambient steady state (N-channel) | RthJA | | | 120 | °C/W | steady state (note d) | 1 |
| Maximum Junction-to-Ambient steady state (P-channel) | RthJA | | | 110 | °C/W | steady state (note d) | 1 |
| Maximum Junction-to-Foot (Drain) steady state (N-channel) | RthJF | | 30 | 40 | °C/W | steady state | 1 |
| Maximum Junction-to-Foot (Drain) steady state (P-channel) | RthJF | | 29 | 38 | °C/W | steady state | 1 |
| Drain-Source Breakdown Voltage (N-channel) | VDS | 30 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Drain-Source Breakdown Voltage (P-channel) | VDS | -30 | | | V | VGS = 0 V, ID = -250 µA | 2 |
| Gate Threshold Voltage (N-channel) | VGS(th) | 1 | | 2 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate Threshold Voltage (P-channel) | VGS(th) | -1 | | -2 | V | VDS = VGS, ID = -250 µA | 2 |
| Gate-Body Leakage (N-channel) | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 |
| Gate-Body Leakage (P-channel) | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 |
| Zero Gate Voltage Drain Current (N-channel) | IDSS | | | 1 | µA | VDS = 30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -1 | | | µA | VDS = -30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current (N-channel) | IDSS | | | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 |
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -10 | | | µA | VDS = -30 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current (N-channel) | ID(on) | 20 | | | A | VDS = 5 V, VGS = 10 V | 2 |
| On-State Drain Current (P-channel) | ID(on) | -20 | | | A | VDS = -5 V, VGS = -10 V | 2 |
| Drain-Source On-State Resistance (P-channel) | RDS(on) | | | 0.04 | Ω | VGS = -10 V, ID = -8 A | 2 |
| Drain-Source On-State Resistance (N-channel) | RDS(on) | | | 0.02 | Ω | VGS = 8 V, ID = 6.7 A | 2 |
| Drain-Source On-State Resistance (P-channel) | RDS(on) | | | 0.044 | Ω | VGS = -8 V, ID = -6.5 A | 2 |
| Drain-Source On-State Resistance (N-channel) | RDS(on) | | | 0.024 | Ω | VGS = 4.5 V, ID = 6.6 A | 2 |
| Drain-Source On-State Resistance (P-channel) | RDS(on) | | | 0.05 | Ω | VGS = -4.5 V, ID = -5 A | 2 |
| Body Diode Forward Voltage (N-channel) | VSD | | 0.81 | 1.2 | V | IS = 5.4 A | 3 |
| Body Diode Forward Voltage (P-channel) | VSD | | -0.77 | -1.2 | V | IS = -2 A | 3 |
| Turn-On Delay Time (N-channel) | td(on) | | 4 | 8 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω | 3 |
| Turn-On Delay Time (P-channel) | td(on) | | 10 | 16 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω | 3 |
| Rise Time (N-channel) | tr | | 10 | 17 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω | 3 |
| Rise Time (P-channel) | tr | | 9 | 15 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω | 3 |
| Forward Transconductance (N-channel) | gfs | | 27 | | S | VDS = 15 V, ID = 6.8 A | 2 |
| Forward Transconductance (P-channel) | gfs | | 25 | | S | VDS = -15 V, ID = -6.7 A | 2 |
## CAD (KiCad official)
- Symbol: `DMC3025LSD-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `dmc3025lsd-vb-etched.step` / `dmc3025lsd-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmc3025lsd-vb.step` / `dmc3025lsd-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603048191810023424) (None pp, sha256 `4873783440de19fc`, retrieved 2026-08-17, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmc3025lsd-vb-datasheet.pdf)