component
DMC3025LSD-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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dmc3025lsd-vb: specified limits as data (metadata.characteristics, 62 rows from the datasheet)
2 files changed
+820
README.md+69@@ -32,6 +32,75 @@ Same part, different packaging or reel option. - `DMC3025LSD-VB` +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage (N-channel) | VDS | | | 30 | V | N-channel; TA = 25 °C unless otherwise noted | 1 |+| Drain-Source Voltage (P-channel) | VDS | -30 | | | V | P-channel; TA = 25 °C unless otherwise noted | 1 |+| Gate-Source Voltage (N-channel) | VGS | -20 | | 20 | V | N-channel; TA = 25 °C unless otherwise noted | 1 |+| Gate-Source Voltage (P-channel) | VGS | -20 | | 20 | V | P-channel; TA = 25 °C unless otherwise noted | 1 |+| Continuous Drain Current (N-channel) | ID | | | 8 | A | TC = 25 °C (TJ = 150 °C) | 1 |+| Continuous Drain Current (P-channel) | ID | -8 | | | A | TC = 25 °C (TJ = 150 °C) | 1 |+| Continuous Drain Current (N-channel) | ID | | | 6.8 | A | TC = 70 °C | 1 |+| Continuous Drain Current (P-channel) | ID | -6.8 | | | A | TC = 70 °C | 1 |+| Continuous Drain Current (P-channel) | ID | -6.6 | | | A | TA = 25 °C (note b, c) | 1 |+| Continuous Drain Current (N-channel) | ID | | | 5.4 | A | TA = 70 °C (note b, c) | 1 |+| Continuous Drain Current (P-channel) | ID | -5.3 | | | A | TA = 70 °C (note b, c) | 1 |+| Pulsed Drain Current (N-channel) | IDM | | | 40 | A | 10 µs pulse width | 1 |+| Pulsed Drain Current (P-channel) | IDM | -40 | | | A | 10 µs pulse width | 1 |+| Source-Drain Diode Current (N-channel) | IS | | | 2.6 | A | TC = 25 °C | 1 |+| Source-Drain Diode Current (P-channel) | IS | -2.6 | | | A | TC = 25 °C | 1 |+| Source-Drain Diode Current (N-channel) | IS | | | 1.6 | A | TA = 25 °C (note b, c) | 1 |+| Source-Drain Diode Current (P-channel) | IS | -1.6 | | | A | TA = 25 °C (note b, c) | 1 |+| Pulsed Source-Drain Current (N-channel) | ISM | | | 40 | A | | 1 |+| Pulsed Source-Drain Current (P-channel) | ISM | -40 | | | A | | 1 |+| Single Pulse Avalanche Current (N-channel) | IAS | | | 10 | A | L = 0.1 mH | 1 |+| Single Pulse Avalanche Current (P-channel) | IAS | -20 | | | A | L = 0.1 mH | 1 |+| Single Pulse Avalanche Energy (N-channel) | EAS | | | 5 | mJ | | 1 |+| Single Pulse Avalanche Energy (P-channel) | EAS | | | 20 | mJ | | 1 |+| Maximum Power Dissipation (N-channel) | PD | | | 3.1 | W | TC = 25 °C | 1 |+| Maximum Power Dissipation (P-channel) | PD | | | 3.2 | W | TC = 25 °C | 1 |+| Maximum Power Dissipation (N-channel) | PD | | | 2 | W | TC = 70 °C | 1 |+| Maximum Power Dissipation (P-channel) | PD | | | 2.1 | W | TC = 70 °C | 1 |+| Maximum Power Dissipation (P-channel) | PD | | | 2 | W | TA = 25 °C (note b, c) | 1 |+| Maximum Power Dissipation (N-channel) | PD | | | 1.28 | W | TA = 70 °C (note b, c) | 1 |+| Maximum Power Dissipation (P-channel) | PD | | | 1.28 | W | TA = 70 °C (note b, c) | 1 |+| Operating Junction and Storage Temperature Range (both channels) | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Maximum Junction-to-Ambient (N-channel) | RthJA | | 50 | 62.5 | °C/W | t ≤ 10 s (notes b, d) | 1 |+| Maximum Junction-to-Ambient (P-channel) | RthJA | | 47 | 62.5 | °C/W | t ≤ 10 s (notes b, d) | 1 |+| Maximum Junction-to-Ambient steady state (N-channel) | RthJA | | | 120 | °C/W | steady state (note d) | 1 |+| Maximum Junction-to-Ambient steady state (P-channel) | RthJA | | | 110 | °C/W | steady state (note d) | 1 |+| Maximum Junction-to-Foot (Drain) steady state (N-channel) | RthJF | | 30 | 40 | °C/W | steady state | 1 |+| Maximum Junction-to-Foot (Drain) steady state (P-channel) | RthJF | | 29 | 38 | °C/W | steady state | 1 |+| Drain-Source Breakdown Voltage (N-channel) | VDS | 30 | | | V | VGS = 0 V, ID = 250 µA | 2 |+| Drain-Source Breakdown Voltage (P-channel) | VDS | -30 | | | V | VGS = 0 V, ID = -250 µA | 2 |+| Gate Threshold Voltage (N-channel) | VGS(th) | 1 | | 2 | V | VDS = VGS, ID = 250 µA | 2 |+| Gate Threshold Voltage (P-channel) | VGS(th) | -1 | | -2 | V | VDS = VGS, ID = -250 µA | 2 |+| Gate-Body Leakage (N-channel) | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 |+| Gate-Body Leakage (P-channel) | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 |+| Zero Gate Voltage Drain Current (N-channel) | IDSS | | | 1 | µA | VDS = 30 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current (P-channel) | IDSS | -1 | | | µA | VDS = -30 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current (N-channel) | IDSS | | | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 |+| Zero Gate Voltage Drain Current (P-channel) | IDSS | -10 | | | µA | VDS = -30 V, VGS = 0 V, TJ = 55 °C | 2 |+| On-State Drain Current (N-channel) | ID(on) | 20 | | | A | VDS = 5 V, VGS = 10 V | 2 |+| On-State Drain Current (P-channel) | ID(on) | -20 | | | A | VDS = -5 V, VGS = -10 V | 2 |+| Drain-Source On-State Resistance (P-channel) | RDS(on) | | | 0.04 | Ω | VGS = -10 V, ID = -8 A | 2 |+| Drain-Source On-State Resistance (N-channel) | RDS(on) | | | 0.02 | Ω | VGS = 8 V, ID = 6.7 A | 2 |+| Drain-Source On-State Resistance (P-channel) | RDS(on) | | | 0.044 | Ω | VGS = -8 V, ID = -6.5 A | 2 |+| Drain-Source On-State Resistance (N-channel) | RDS(on) | | | 0.024 | Ω | VGS = 4.5 V, ID = 6.6 A | 2 |+| Drain-Source On-State Resistance (P-channel) | RDS(on) | | | 0.05 | Ω | VGS = -4.5 V, ID = -5 A | 2 |+| Body Diode Forward Voltage (N-channel) | VSD | | 0.81 | 1.2 | V | IS = 5.4 A | 3 |+| Body Diode Forward Voltage (P-channel) | VSD | | -0.77 | -1.2 | V | IS = -2 A | 3 |+| Turn-On Delay Time (N-channel) | td(on) | | 4 | 8 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω | 3 |+| Turn-On Delay Time (P-channel) | td(on) | | 10 | 16 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω | 3 |+| Rise Time (N-channel) | tr | | 10 | 17 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω | 3 |+| Rise Time (P-channel) | tr | | 9 | 15 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω | 3 |+| Forward Transconductance (N-channel) | gfs | | 27 | | S | VDS = 15 V, ID = 6.8 A | 2 |+| Forward Transconductance (P-channel) | gfs | | 25 | | S | VDS = -15 V, ID = -6.7 A | 2 |+ ## CAD (KiCad official) - Symbol: `DMC3025LSD-VB`
page.json+751@@ -146,6 +146,757 @@ "Package": "SO-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "4873783440de19fc",+ "rows": [+ {+ "name": "Drain-Source Voltage (N-channel)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "N-channel; TA = 25 °C unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage (P-channel)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "P-channel; TA = 25 °C unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (N-channel)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "N-channel; TA = 25 °C unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (P-channel)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "P-channel; TA = 25 °C unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "TC = 25 °C (TJ = 150 °C)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (P-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -8,+ "typ": null,+ "max": null,+ "conditions": "TC = 25 °C (TJ = 150 °C)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6.8,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (P-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -6.8,+ "typ": null,+ "max": null,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (P-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -6.6,+ "typ": null,+ "max": null,+ "conditions": "TA = 25 °C (note b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5.4,+ "conditions": "TA = 70 °C (note b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (P-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -5.3,+ "typ": null,+ "max": null,+ "conditions": "TA = 70 °C (note b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (N-channel)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "10 µs pulse width",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (P-channel)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -40,+ "typ": null,+ "max": null,+ "conditions": "10 µs pulse width",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Source-Drain Diode Current (N-channel)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.6,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Source-Drain Diode Current (P-channel)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -2.6,+ "typ": null,+ "max": null,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Source-Drain Diode Current (N-channel)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "TA = 25 °C (note b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Source-Drain Diode Current (P-channel)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -1.6,+ "typ": null,+ "max": null,+ "conditions": "TA = 25 °C (note b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Source-Drain Current (N-channel)",+ "symbol": "ISM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Source-Drain Current (P-channel)",+ "symbol": "ISM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -40,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Current (N-channel)",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "L = 0.1 mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Current (P-channel)",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "L = 0.1 mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy (N-channel)",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy (P-channel)",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (N-channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3.1,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (P-channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3.2,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (N-channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (P-channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.1,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (P-channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "TA = 25 °C (note b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (N-channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.28,+ "conditions": "TA = 70 °C (note b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (P-channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.28,+ "conditions": "TA = 70 °C (note b, c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range (both channels)",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient (N-channel)",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 50,+ "max": 62.5,+ "conditions": "t ≤ 10 s (notes b, d)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient (P-channel)",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 47,+ "max": 62.5,+ "conditions": "t ≤ 10 s (notes b, d)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient steady state (N-channel)",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "steady state (note d)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient steady state (P-channel)",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 110,+ "conditions": "steady state (note d)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Foot (Drain) steady state (N-channel)",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 30,+ "max": 40,+ "conditions": "steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Foot (Drain) steady state (P-channel)",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 29,+ "max": 38,+ "conditions": "steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage (N-channel)",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage (P-channel)",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = -250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage (N-channel)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": null,+ "max": 2,+ "conditions": "VDS = VGS, ID = 250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage (P-channel)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": null,+ "max": -2,+ "conditions": "VDS = VGS, ID = -250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage (N-channel)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ±12 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage (P-channel)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ±12 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (N-channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 30 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (P-channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -1,+ "typ": null,+ "max": null,+ "conditions": "VDS = -30 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (N-channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VDS = 30 V, VGS = 0 V, TJ = 55 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (P-channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -10,+ "typ": null,+ "max": null,+ "conditions": "VDS = -30 V, VGS = 0 V, TJ = 55 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current (N-channel)",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "VDS = 5 V, VGS = 10 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current (P-channel)",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "VDS = -5 V, VGS = -10 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (P-channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.04,+ "conditions": "VGS = -10 V, ID = -8 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (N-channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.02,+ "conditions": "VGS = 8 V, ID = 6.7 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (P-channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.044,+ "conditions": "VGS = -8 V, ID = -6.5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (N-channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.024,+ "conditions": "VGS = 4.5 V, ID = 6.6 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (P-channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.05,+ "conditions": "VGS = -4.5 V, ID = -5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Forward Voltage (N-channel)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.81,+ "max": 1.2,+ "conditions": "IS = 5.4 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Forward Voltage (P-channel)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.77,+ "max": -1.2,+ "conditions": "IS = -2 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time (N-channel)",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 4,+ "max": 8,+ "conditions": "VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time (P-channel)",+ "symbol": "td(on)",+ "kind": "timing",+ 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