component
CSD18532KCS
Public Made by Adomby adom
Texas Instruments MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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csd18532kcs: specified limits as data (metadata.characteristics, 24 rows from the datasheet)
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CSD18532KCS
Texas Instruments · MOSFETs · TO-220
CSD18532KCS from Texas Instruments, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control input; maximum gate-to-source voltage ±20V for switching control. |
| 2 | Drain | passive | Drain terminal for main current conduction path; maximum drain-to-source voltage 60V and continuous drain current 100A at TC=25°C (package limited). |
| 3 | Source | passive | Source terminal providing current return path; maximum gate-to-source voltage ±20V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | 60 | V | TA = 25°C | 1 | ||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | TA = 25°C | 1 | |
| Continuous Drain Current (Package limited) | ID | 100 | A | TC = 25°C | 1 | ||
| Continuous Drain Current (Silicon limited) | ID | 169 | A | TC = 25°C | 1 | ||
| Continuous Drain Current (Silicon limited) | ID | 116 | A | TC = 100°C | 1 | ||
| Pulsed Drain Current | IDM | 400 | A | Pulse duration ≤300μs, duty cycle ≤2% | 1 | ||
| Power Dissipation | PD | 250 | W | TA = 25°C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Avalanche Energy, single pulse | EAS | 281 | mJ | ID = 75A, L = 0.1mH, RG = 25Ω | 1 | ||
| Drain-to-Source Voltage | BVDSS | 60 | V | VGS = 0V, ID = 250μA | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | μA | VGS = 0V, VDS = 48V | 3 | ||
| Gate-to-Source Leakage Current | IGSS | 100 | nA | VDS = 0V, VGS = 20V | 3 | ||
| Gate-to-Source Threshold Voltage | VGS(th) | 1.5 | 1.8 | 2.2 | V | VDS = VGS, ID = 250μA | 3 |
| Drain-to-Source On Resistance (VGS = 4.5V) | RDS(on) | 4.2 | 5.3 | mΩ | VGS = 4.5V, ID = 100A | 3 | |
| Drain-to-Source On Resistance (VGS = 10V) | RDS(on) | 3.3 | 4.2 | mΩ | VGS = 10V, ID = 100A | 3 | |
| Input Capacitance | Ciss | 3900 | 4680 | pF | VGS = 0V, VDS = 30V, ƒ = 1MHz | 3 | |
| Output Capacitance | Coss | 470 | 564 | pF | VGS = 0V, VDS = 30V, ƒ = 1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 11 | 14 | pF | VGS = 0V, VDS = 30V, ƒ = 1MHz | 3 | |
| Series Gate Resistance | RG | 1.3 | 2.6 | Ω | 3 | ||
| Gate Charge Total (4.5V) | Qg | 21 | 25 | nC | VDS = 30V, ID = 100A | 3 | |
| Gate Charge Total (10V) | Qg | 44 | 53 | nC | VDS = 30V, ID = 100A | 3 | |
| Diode Forward Voltage | VSD | 0.8 | 1 | V | ISD = 100A, VGS = 0V | 3 | |
| Junction-to-Case Thermal Resistance | RθJC | 0.6 | °C/W | 3 | |||
| Junction-to-Ambient Thermal Resistance | RθJA | 62 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
CSD18532KCS - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
csd18532kcs-etched.step/csd18532kcs-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);csd18532kcs.step/csd18532kcs.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (14 pp, sha256
1cd4e62da3a892e3, retrieved 2026-09-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-4-6(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CSD18532KCS
**Texas Instruments** · MOSFETs · TO-220
CSD18532KCS from Texas Instruments, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control input; maximum gate-to-source voltage ±20V for switching control. |
| 2 | Drain | passive | Drain terminal for main current conduction path; maximum drain-to-source voltage 60V and continuous drain current 100A at TC=25°C (package limited). |
| 3 | Source | passive | Source terminal providing current return path; maximum gate-to-source voltage ±20V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | | | 60 | V | TA = 25°C | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | TA = 25°C | 1 |
| Continuous Drain Current (Package limited) | ID | | | 100 | A | TC = 25°C | 1 |
| Continuous Drain Current (Silicon limited) | ID | | | 169 | A | TC = 25°C | 1 |
| Continuous Drain Current (Silicon limited) | ID | | | 116 | A | TC = 100°C | 1 |
| Pulsed Drain Current | IDM | | | 400 | A | Pulse duration ≤300μs, duty cycle ≤2% | 1 |
| Power Dissipation | PD | | | 250 | W | TA = 25°C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Avalanche Energy, single pulse | EAS | | | 281 | mJ | ID = 75A, L = 0.1mH, RG = 25Ω | 1 |
| Drain-to-Source Voltage | BVDSS | 60 | | | V | VGS = 0V, ID = 250μA | 3 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | μA | VGS = 0V, VDS = 48V | 3 |
| Gate-to-Source Leakage Current | IGSS | | | 100 | nA | VDS = 0V, VGS = 20V | 3 |
| Gate-to-Source Threshold Voltage | VGS(th) | 1.5 | 1.8 | 2.2 | V | VDS = VGS, ID = 250μA | 3 |
| Drain-to-Source On Resistance (VGS = 4.5V) | RDS(on) | | 4.2 | 5.3 | mΩ | VGS = 4.5V, ID = 100A | 3 |
| Drain-to-Source On Resistance (VGS = 10V) | RDS(on) | | 3.3 | 4.2 | mΩ | VGS = 10V, ID = 100A | 3 |
| Input Capacitance | Ciss | | 3900 | 4680 | pF | VGS = 0V, VDS = 30V, ƒ = 1MHz | 3 |
| Output Capacitance | Coss | | 470 | 564 | pF | VGS = 0V, VDS = 30V, ƒ = 1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 11 | 14 | pF | VGS = 0V, VDS = 30V, ƒ = 1MHz | 3 |
| Series Gate Resistance | RG | | 1.3 | 2.6 | Ω | | 3 |
| Gate Charge Total (4.5V) | Qg | | 21 | 25 | nC | VDS = 30V, ID = 100A | 3 |
| Gate Charge Total (10V) | Qg | | 44 | 53 | nC | VDS = 30V, ID = 100A | 3 |
| Diode Forward Voltage | VSD | | 0.8 | 1 | V | ISD = 100A, VGS = 0V | 3 |
| Junction-to-Case Thermal Resistance | RθJC | | | 0.6 | °C/W | | 3 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 62 | °C/W | | 3 |
## CAD (KiCad official)
- Symbol: `CSD18532KCS`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `csd18532kcs-etched.step` / `csd18532kcs-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `csd18532kcs.step` / `csd18532kcs.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/lit/ds/symlink/csd18532kcs.pdf) (14 pp, sha256 `1cd4e62da3a892e3`, retrieved 2026-09-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-4-6` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/csd18532kcs-datasheet.pdf)