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csd18532kcs: specified limits as data (metadata.characteristics, 24 rows from the datasheet)

Ray ·3128a7ae3c · ·parent 886bb4e
2 files changed +326
README.md+31
@@ -21,6 +21,37 @@ CSD18532KCS from Texas Instruments, in a TO-220. Pinout and pin descriptions ext | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-to-Source Voltage | VDS |  |  | 60 | V | TA = 25°C | 1 |+| Gate-to-Source Voltage | VGS | -20 |  | 20 | V | TA = 25°C | 1 |+| Continuous Drain Current (Package limited) | ID |  |  | 100 | A | TC = 25°C | 1 |+| Continuous Drain Current (Silicon limited) | ID |  |  | 169 | A | TC = 25°C | 1 |+| Continuous Drain Current (Silicon limited) | ID |  |  | 116 | A | TC = 100°C | 1 |+| Pulsed Drain Current | IDM |  |  | 400 | A | Pulse duration ≤300μs, duty cycle ≤2% | 1 |+| Power Dissipation | PD |  |  | 250 | W | TA = 25°C | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 175 | °C |  | 1 |+| Avalanche Energy, single pulse | EAS |  |  | 281 | mJ | ID = 75A, L = 0.1mH, RG = 25Ω | 1 |+| Drain-to-Source Voltage | BVDSS | 60 |  |  | V | VGS = 0V, ID = 250μA | 3 |+| Drain-to-Source Leakage Current | IDSS |  |  | 1 | μA | VGS = 0V, VDS = 48V | 3 |+| Gate-to-Source Leakage Current | IGSS |  |  | 100 | nA | VDS = 0V, VGS = 20V | 3 |+| Gate-to-Source Threshold Voltage | VGS(th) | 1.5 | 1.8 | 2.2 | V | VDS = VGS, ID = 250μA | 3 |+| Drain-to-Source On Resistance (VGS = 4.5V) | RDS(on) |  | 4.2 | 5.3 | mΩ | VGS = 4.5V, ID = 100A | 3 |+| Drain-to-Source On Resistance (VGS = 10V) | RDS(on) |  | 3.3 | 4.2 | mΩ | VGS = 10V, ID = 100A | 3 |+| Input Capacitance | Ciss |  | 3900 | 4680 | pF | VGS = 0V, VDS = 30V, ƒ = 1MHz | 3 |+| Output Capacitance | Coss |  | 470 | 564 | pF | VGS = 0V, VDS = 30V, ƒ = 1MHz | 3 |+| Reverse Transfer Capacitance | Crss |  | 11 | 14 | pF | VGS = 0V, VDS = 30V, ƒ = 1MHz | 3 |+| Series Gate Resistance | RG |  | 1.3 | 2.6 | Ω |  | 3 |+| Gate Charge Total (4.5V) | Qg |  | 21 | 25 | nC | VDS = 30V, ID = 100A | 3 |+| Gate Charge Total (10V) | Qg |  | 44 | 53 | nC | VDS = 30V, ID = 100A | 3 |+| Diode Forward Voltage | VSD |  | 0.8 | 1 | V | ISD = 100A, VGS = 0V | 3 |+| Junction-to-Case Thermal Resistance | RθJC |  |  | 0.6 | °C/W |  | 3 |+| Junction-to-Ambient Thermal Resistance | RθJA |  |  | 62 | °C/W |  | 3 |+ ## CAD (KiCad official)  - Symbol: `CSD18532KCS`
page.json+295
@@ -148,6 +148,301 @@       "Package": "TO-220",       "Category": "Transistors/Thyristors",       "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "1cd4e62da3a892e3",+      "rows": [+        {+          "name": "Drain-to-Source Voltage",+          "symbol": "VDS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 60,+          "conditions": "TA = 25°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Gate-to-Source Voltage",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -20,+          "typ": null,+          "max": 20,+          "conditions": "TA = 25°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Continuous Drain Current (Package limited)",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 100,+          "conditions": "TC = 25°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Continuous Drain Current (Silicon limited)",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 169,+          "conditions": "TC = 25°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Continuous Drain Current (Silicon limited)",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 116,+          "conditions": "TC = 100°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Pulsed Drain Current",+          "symbol": "IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 400,+          "conditions": "Pulse duration ≤300μs, duty cycle ≤2%",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Power Dissipation",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 250,+          "conditions": "TA = 25°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Operating Junction and Storage Temperature Range",+          "symbol": "TJ, Tstg",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 175,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Avalanche Energy, single pulse",+          "symbol": "EAS",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 281,+          "conditions": "ID = 75A, L = 0.1mH, RG = 25Ω",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Drain-to-Source Voltage",+          "symbol": "BVDSS",+          "kind": "electrical",+          "unit": "V",+          "min": 60,+          "typ": null,+          "max": null,+          "conditions": "VGS = 0V, ID = 250μA",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Drain-to-Source Leakage Current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "μA",+          "min": null,+          "typ": null,+          "max": 1,+          "conditions": "VGS = 0V, VDS = 48V",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Gate-to-Source Leakage Current",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": 100,+          "conditions": "VDS = 0V, VGS = 20V",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Gate-to-Source Threshold Voltage",+          "symbol": "VGS(th)",+          "kind": "electrical",+          "unit": "V",+          "min": 1.5,+          "typ": 1.8,+          "max": 2.2,+          "conditions": "VDS = VGS, ID = 250μA",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Drain-to-Source On Resistance (VGS = 4.5V)",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 4.2,+          "max": 5.3,+          "conditions": "VGS = 4.5V, ID = 100A",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Drain-to-Source On Resistance (VGS = 10V)",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 3.3,+          "max": 4.2,+          "conditions": "VGS = 10V, ID = 100A",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Input Capacitance",+          "symbol": "Ciss",+          "kind": "electrical",+          "unit": "pF",+          "min": null,+          "typ": 3900,+          "max": 4680,+          "conditions": "VGS = 0V, VDS = 30V, ƒ = 1MHz",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Output Capacitance",+          "symbol": "Coss",+          "kind": "electrical",+          "unit": "pF",+          "min": null,+          "typ": 470,+          "max": 564,+          "conditions": "VGS = 0V, VDS = 30V, ƒ = 1MHz",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Reverse Transfer Capacitance",+          "symbol": "Crss",+          "kind": "electrical",+          "unit": "pF",+          "min": null,+          "typ": 11,+          "max": 14,+          "conditions": "VGS = 0V, VDS = 30V, ƒ = 1MHz",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Series Gate Resistance",+          "symbol": "RG",+          "kind": "electrical",+          "unit": "Ω",+          "min": null,+          "typ": 1.3,+          "max": 2.6,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Gate Charge Total (4.5V)",+          "symbol": "Qg",+          "kind": "electrical",+          "unit": "nC",+          "min": null,+          "typ": 21,+          "max": 25,+          "conditions": "VDS = 30V, ID = 100A",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Gate Charge Total (10V)",+          "symbol": "Qg",+          "kind": "electrical",+          "unit": "nC",+          "min": null,+          "typ": 44,+          "max": 53,+          "conditions": "VDS = 30V, ID = 100A",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Diode Forward Voltage",+          "symbol": "VSD",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": 0.8,+          "max": 1,+          "conditions": "ISD = 100A, VGS = 0V",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Junction-to-Case Thermal Resistance",+          "symbol": "RθJC",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 0.6,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Junction-to-Ambient Thermal Resistance",+          "symbol": "RθJA",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 62,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        }+      ]     }   },   "variants": [],