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Contents

README

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CSD18532KCS

Texas Instruments · MOSFETs · TO-220

CSD18532KCS from Texas Instruments, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control input; maximum gate-to-source voltage ±20V for switching control.
2 Drain passive Drain terminal for main current conduction path; maximum drain-to-source voltage 60V and continuous drain current 100A at TC=25°C (package limited).
3 Source passive Source terminal providing current return path; maximum gate-to-source voltage ±20V.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDS 60 V TA = 25°C 1
Gate-to-Source Voltage VGS -20 20 V TA = 25°C 1
Continuous Drain Current (Package limited) ID 100 A TC = 25°C 1
Continuous Drain Current (Silicon limited) ID 169 A TC = 25°C 1
Continuous Drain Current (Silicon limited) ID 116 A TC = 100°C 1
Pulsed Drain Current IDM 400 A Pulse duration ≤300μs, duty cycle ≤2% 1
Power Dissipation PD 250 W TA = 25°C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Avalanche Energy, single pulse EAS 281 mJ ID = 75A, L = 0.1mH, RG = 25Ω 1
Drain-to-Source Voltage BVDSS 60 V VGS = 0V, ID = 250μA 3
Drain-to-Source Leakage Current IDSS 1 μA VGS = 0V, VDS = 48V 3
Gate-to-Source Leakage Current IGSS 100 nA VDS = 0V, VGS = 20V 3
Gate-to-Source Threshold Voltage VGS(th) 1.5 1.8 2.2 V VDS = VGS, ID = 250μA 3
Drain-to-Source On Resistance (VGS = 4.5V) RDS(on) 4.2 5.3 mΩ VGS = 4.5V, ID = 100A 3
Drain-to-Source On Resistance (VGS = 10V) RDS(on) 3.3 4.2 mΩ VGS = 10V, ID = 100A 3
Input Capacitance Ciss 3900 4680 pF VGS = 0V, VDS = 30V, ƒ = 1MHz 3
Output Capacitance Coss 470 564 pF VGS = 0V, VDS = 30V, ƒ = 1MHz 3
Reverse Transfer Capacitance Crss 11 14 pF VGS = 0V, VDS = 30V, ƒ = 1MHz 3
Series Gate Resistance RG 1.3 2.6 Ω 3
Gate Charge Total (4.5V) Qg 21 25 nC VDS = 30V, ID = 100A 3
Gate Charge Total (10V) Qg 44 53 nC VDS = 30V, ID = 100A 3
Diode Forward Voltage VSD 0.8 1 V ISD = 100A, VGS = 0V 3
Junction-to-Case Thermal Resistance RθJC 0.6 °C/W 3
Junction-to-Ambient Thermal Resistance RθJA 62 °C/W 3

CAD (KiCad official)

  • Symbol: CSD18532KCS
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: csd18532kcs-etched.step / csd18532kcs-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); csd18532kcs.step / csd18532kcs.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (14 pp, sha256 1cd4e62da3a892e3, retrieved 2026-09-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF