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CS817x20HS

Chipanalog · Digital Isolators · SOIC-8

CS817x20HS from Chipanalog, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDD1 power_in Power supply for side 1, operating from 2.375 V to 5.5 V and to be bypassed with at least 1 µF low-ESR ceramic capacitor to GND1.
2 INA input Digital input A on side 1 (corresponds to output OUTA on side 2); logic thresholds are 0.7×VDDI1 (rising) and 0.3×VDDI (falling), with input voltage limited to -0.5 V to VDDI+0.5 V.
3 INB input Digital input B on side 1 (corresponds to output OUTB on side 2); logic thresholds are 0.7×VDDI1 (rising) and 0.3×VDDI (falling), with input voltage limited to -0.5 V to VDDI+0.5 V.
4 GND1 power_in Ground reference for side 1, the isolated ground for the side 1 supply and inputs.
5 GND2 power_in Ground reference for side 2, the isolated ground for the side 2 supply and outputs, which must not be connected to GND1 as this defeats the isolation.
6 OUTB output Digital output B on side 2, the logic output for input INB on side 1; the default state is high for HS devices when the input is unpowered or open.
7 OUTA output Digital output A on side 2, the logic output for input INA on side 1; the default state is high for HS devices when the input is unpowered or open.
8 VDD2 power_in Power supply for side 2, operating from 2.375 V to 5.5 V and to be bypassed with at least 1 µF low-ESR ceramic capacitor to GND2.

Key specifications

Parameter Value
Manufacturer Chipanalog
Package SOIC-8
Category Signal Isolation Devices
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
High-level Output Voltage VOH 4.7 V VDD1=VDD2=5V±10%, TA -40 to 105°C; IOH = -4mA 7
Low-level Output Voltage VOL 0.3 0.4 V VDD1=VDD2=5V±10%, TA -40 to 105°C; IOL = 4mA 7
Common-mode Transient Immunity CMTI 100 150 kV/µs VDD1=VDD2=5V±10%; VI = VDDI1 or 0 V, VCM = 1500 V 7
High-Level Input Leakage Current IIH 1 µA VDD1=VDD2=5V±10%; VIH = VDDI at INx 7
Low-Level Input Leakage Current IIL -1 µA VDD1=VDD2=5V±10%; VIL = 0 V at INx 7
High-level Output Voltage VOH 3 V VDD1=VDD2=3.3V±10%, TA -40 to 105°C; IOH = -4mA 7
High-level Output Voltage VOH 2.2 V VDD1=VDD2=2.5V±10%, TA -40 to 105°C; IOH = -4mA 7
Low-level Output Voltage VOL 0.2 0.4 V VDD1=VDD2=2.5V±10%, TA -40 to 105°C; IOL = 4mA 7
Supply Current side 1, DC signal (VIN=VDDI1, HS) IDD1 30 60 µA VDD1=VDD2=5V±10%, TA -40 to 105°C; VIN = VDDI1 (CS817x20HS), DC signal 8
Supply Current side 2, DC signal (VIN=VDDI1, HS) IDD2 170 340 µA VDD1=VDD2=5V±10%, TA -40 to 105°C; VIN = VDDI1 (CS817x20HS), DC signal 8
Supply Current side 1, DC signal (VIN=0V, HS) IDD1 40 80 µA VDD1=VDD2=5V±10%, TA -40 to 105°C; VIN = 0V (CS817x20HS), DC signal 8
Supply Current side 2, DC signal (VIN=0V, HS) IDD2 170 340 µA VDD1=VDD2=5V±10%, TA -40 to 105°C; VIN = 0V (CS817x20HS), DC signal 8
Supply Current side 1, AC signal 10kbps (5kHz) IDD1 45 90 µA VDD1=VDD2=5V±10%; all channels switching 50% duty square wave, 5.0V input, CL=15 pF per channel 8
Supply Current side 2, AC signal 10kbps (5kHz) IDD2 180 360 µA VDD1=VDD2=5V±10%; all channels switching 50% duty square wave, 5.0V input, CL=15 pF per channel 8
Supply Current side 1, AC signal 200kbps (100kHz) IDD1 180 360 µA VDD1=VDD2=5V±10%; all channels switching 50% duty square wave, 5.0V input, CL=15 pF per channel 8
Supply Current side 2, AC signal 200kbps (100kHz) IDD2 300 600 µA VDD1=VDD2=5V±10%; all channels switching 50% duty square wave, 5.0V input, CL=15 pF per channel 8
Supply Current side 1, DC signal (VIN=VDDI1, HS) IDD1 25 50 µA VDD1=VDD2=3.3V±10%, TA -40 to 105°C; VIN = VDDI1 (CS817x20HS), DC signal 8
Supply Current side 2, DC signal (VIN=VDDI1, HS) IDD2 155 310 µA VDD1=VDD2=3.3V±10%, TA -40 to 105°C; VIN = VDDI1 (CS817x20HS), DC signal 8
Supply Current side 1, DC signal (VIN=0V, HS) IDD1 30 60 µA VDD1=VDD2=3.3V±10%, TA -40 to 105°C; VIN = 0V (CS817x20HS), DC signal 8
Supply Current side 2, DC signal (VIN=0V, HS) IDD2 160 320 µA VDD1=VDD2=3.3V±10%, TA -40 to 105°C; VIN = 0V (CS817x20HS), DC signal 8
Supply Current side 1, AC signal 10kbps (5kHz) IDD1 35 70 µA VDD1=VDD2=3.3V±10%; all channels switching 50% duty square wave, 3.3V input, CL=15 pF per channel 8
Supply Current side 2, AC signal 10kbps (5kHz) IDD2 165 330 µA VDD1=VDD2=3.3V±10%; all channels switching 50% duty square wave, 3.3V input, CL=15 pF per channel 8
Supply Current side 1, AC signal 200kbps (100kHz) IDD1 115 230 µA VDD1=VDD2=3.3V±10%; all channels switching 50% duty square wave, 3.3V input, CL=15 pF per channel 8
Supply Current side 2, AC signal 200kbps (100kHz) IDD2 235 470 µA VDD1=VDD2=3.3V±10%; all channels switching 50% duty square wave, 3.3V input, CL=15 pF per channel 8
Supply Current side 1, DC signal (VIN=VDDI1, HS) IDD1 25 50 µA VDD1=VDD2=2.5V±10%, TA -40 to 105°C; VIN = VDDI1 (CS817x20HS), DC signal 9
Supply Current side 2, DC signal (VIN=VDDI1, HS) IDD2 150 300 µA VDD1=VDD2=2.5V±10%, TA -40 to 105°C; VIN = VDDI1 (CS817x20HS), DC signal 9
Supply Current side 1, DC signal (VIN=0V, HS) IDD1 35 70 µA VDD1=VDD2=2.5V±10%, TA -40 to 105°C; VIN = 0V (CS817x20HS), DC signal 9
Supply Current side 2, DC signal (VIN=0V, HS) IDD2 155 310 µA VDD1=VDD2=2.5V±10%, TA -40 to 105°C; VIN = 0V (CS817x20HS), DC signal 9
Supply Current side 1, AC signal 10kbps (5kHz) IDD1 30 60 µA VDD1=VDD2=2.5V±10%; all channels switching 50% duty square wave, 2.5V input, CL=15 pF per channel 9
Supply Current side 2, AC signal 10kbps (5kHz) IDD2 155 310 µA VDD1=VDD2=2.5V±10%; all channels switching 50% duty square wave, 2.5V input, CL=15 pF per channel 9
Supply Current side 1, AC signal 200kbps (100kHz) IDD1 40 80 µA VDD1=VDD2=2.5V±10%; all channels switching 50% duty square wave, 2.5V input, CL=15 pF per channel 9
Supply Current side 2, AC signal 200kbps (100kHz) IDD2 180 360 µA VDD1=VDD2=2.5V±10%; all channels switching 50% duty square wave, 2.5V input, CL=15 pF per channel 9
Data Rate DR 0 200 kbps VDD1=VDD2=2.5V~5.5V, TA -40 to 105°C 9
Propagation Delay Time tPLH, tPHL 1.1 2 µs 9
Pulse Width Distortion PWD 100 ns /tPLH - tPHL/ 9
Channel-to-Channel Output Skew Time tsk(o) 100 ns Same-direction channels 9
Output Signal Rise Time tr 2.8 5 ns 9
Output Signal Fall Time tf 2.8 5 ns 9
Default Output Delay Time from Input Power Loss tDO 400 600 µs 9
Supply Voltage on Side 1 and 2 VDD1, VDD2 2.375 5.5 V 5
High-level Output Current IOH 4 mA VDDO1 = 5V 5
High-level Output Current IOH 2 mA VDDO = 3.3V 5
High-level Output Current IOH 1 mA VDDO = 2.5V 5
Low-level Output Current IOL -4 mA VDDO = 5V 5
Low-level Output Current IOL -2 mA VDDO = 3.3V 5
Low-level Output Current IOL -1 mA VDDO = 2.5V 5
Ambient Temperature TA -40 25 125 °C 5
Power Supply Voltage VDD1, VDD2 -0.5 6 V VDD1, VDD2 power supply voltage; peak, with respect to local ground 5
Voltage at INX, OUTX Vin -0.5 V Voltage at INX, OUTX; upper limit printed as VDDI+0.5 5
Output Current IO -20 20 mA 5
Junction Temperature TJ 150 °C 5
Storage Temperature Range TSTG -65 150 °C 5
Junction-to-ambient Thermal Resistance RθJA 110.1 °C/W SOIC8-NB(S) package 5

CAD (KiCad official)

  • Symbol: CS817x20HS
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: cs817x20hs-etched.step / cs817x20hs-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cs817x20hs.step / cs817x20hs.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Chipanalog datasheet (20 pp, sha256 370cfd8ae67fb372, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF