component
CS22-12IO1M
Public Made by Adomby adom
Littelfuse/IXYS TRIACs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CS22-12IO1M
Littelfuse/IXYS · TRIACs · TO-220
CS22-12IO1M from Littelfuse/IXYS, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the thyristor, with repetitive reverse/forward blocking voltage of 1200 V and average forward current of 16 A. |
| 2 | A | passive | Anode of the thyristor, connected to the middle lead; the plastic overmolded backside tab is isolated (2500 V~). |
| 3 | G | input | Gate trigger terminal, with a gate trigger voltage of 1.3 V and a gate trigger current of 30 mA at 25°C (6 V supply). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Littelfuse/IXYS |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse/forward blocking voltage | VRRM/VDRM | 1200 | V | 2 | |||
| Non-repetitive peak reverse/forward blocking voltage | VRSM/VDSM | 1300 | V | 2 | |||
| Reverse current, drain current | IR/ID | 10 | µA | VR/D = VRRM/VDRM; TVJ = 25°C | 2 | ||
| Reverse current, drain current | IR/ID | 2 | mA | VR/D = VRRM/VDRM; TVJ = 150°C | 2 | ||
| Forward voltage drop | VT | 1.59 | V | TVJ = 25°C; IT = 30 A | 2 | ||
| Forward voltage drop | VT | 1.65 | V | TVJ = 25°C; IT = 60 A | 2 | ||
| Forward voltage drop | VT | 1.27 | V | TVJ = 125°C; IT = 30 A | 2 | ||
| Threshold voltage | V0 | 0.86 | V | TVJ = 150°C; on die level | 3 | ||
| Slope resistance | R0 | 10.1 | mΩ | TVJ = 150°C; on die level | 3 | ||
| Gate trigger voltage | VGT | 1.3 | V | VD = 6 V; TVJ = 25°C | 2 | ||
| Gate trigger voltage | VGT | 1.6 | V | VD = 6 V; TVJ = -40°C | 2 | ||
| Gate trigger current | IGT | 30 | mA | VD = 6 V; TVJ = 25°C | 2 | ||
| Gate trigger current | IGT | 50 | mA | VD = 6 V; TVJ = -40°C | 2 | ||
| Gate non-trigger voltage | VGD | 0.2 | V | 2 | |||
| Gate non-trigger current | IGD | 1 | mA | 2 | |||
| Latching current | IL | 90 | mA | tp = 10 µs; TVJ = 25°C; IG = 0.3 A | 2 | ||
| Holding current | IH | 60 | mA | VD = 6 V; RGK = ∞; TVJ = 25°C | 2 | ||
| Gate controlled delay time | tgd | 2 | µs | TVJ = 25°C; VD = ½ VDRM; IG = 0.3 A | 2 | ||
| Turn-off time | tq | 150 | µs | TVJ = 150°C; VR = 100 V; IT = 30 A | 2 | ||
| Critical rate of rise of voltage | (dv/dt)cr | 500 | V/µs | TVJ = 125°C; VD = ⅔ VDRM; RGK = ∞; method 1 (linear voltage rise) | 2 | ||
| Critical rate of rise of current | (di/dt)cr | 150 | A/µs | TVJ = 125°C; f = 50 Hz repetitive; IG = 0.3 A | 2 | ||
| Max. forward surge current | ITSM | 300 | A | t = 10 ms (50 Hz), sine; TVJ = 45°C; VR = 0 V | 2 | ||
| Max. forward surge current | ITSM | 325 | A | t = 8.3 ms (60 Hz), sine; TVJ = 45°C; VR = 0 V | 2 | ||
| Max. forward surge current | ITSM | 255 | A | t = 10 ms (50 Hz), sine; TVJ = 150°C; VR = 0 V | 2 | ||
| Max. forward surge current | ITSM | 275 | A | t = 8.3 ms (60 Hz), sine; TVJ = 150°C; VR = 0 V | 2 | ||
| I²t value for fusing | I²t | 450 | A²s | t = 10 ms (50 Hz), sine; TVJ = 45°C; VR = 0 V | 2 | ||
| I²t value for fusing | I²t | 440 | A²s | t = 8.3 ms (60 Hz), sine; TVJ = 45°C; VR = 0 V | 2 | ||
| I²t value for fusing | I²t | 325 | A²s | t = 10 ms (50 Hz), sine; TVJ = 150°C; VR = 0 V | 2 | ||
| I²t value for fusing | I²t | 315 | A²s | t = 8.3 ms (60 Hz), sine; TVJ = 150°C; VR = 0 V | 2 | ||
| Total power dissipation | Ptot | 50 | W | TC = 25°C | 2 | ||
| Max. gate power dissipation | PGM | 10 | W | tp = 30 µs | 2 | ||
| Max. gate power dissipation | PGM | 5 | W | tp = 300 µs | 2 | ||
| Average gate power dissipation | PGAV | 0.5 | W | 2 | |||
| RMS current per terminal | IRMS | 35 | A | per terminal | 3 | ||
| Virtual junction temperature | TVJ | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Operation temperature | Top | -55 | 125 | °C | 3 | ||
| Mounting torque | MD | 0.4 | 0.6 | Nm | 3 | ||
| Mounting force with clip | FC | 20 | 60 | N | with clip | 3 | |
| Isolation voltage | VISOL | 2500 | V | t = 1 second; 50/60 Hz, RMS; IISOL ≤ 1 mA | 3 | ||
| Isolation voltage | VISOL | 2100 | V | t = 1 minute; 50/60 Hz, RMS; IISOL ≤ 1 mA | 3 | ||
| Creepage distance on surface | dSpp | 1.6 | mm | terminal to terminal | 3 | ||
| Striking distance through air | dApp | 1 | mm | terminal to terminal | 3 | ||
| Creepage distance on surface | dSpb | 2.5 | mm | terminal to backside | 3 | ||
| Striking distance through air | dApb | 2.5 | mm | terminal to backside | 3 | ||
| Thermal resistance junction to case | RthJC | 2.5 | K/W | junction to case | 2 |
CAD (KiCad official)
- Symbol:
CS22-12IO1M - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
cs22-12io1m-etched.step/cs22-12io1m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cs22-12io1m.step/cs22-12io1m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Littelfuse/IXYS datasheet (6 pp, sha256
a7614f067b57a613, retrieved 2026-11-12, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CS22-12IO1M
**Littelfuse/IXYS** · TRIACs · TO-220
CS22-12IO1M from Littelfuse/IXYS, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the thyristor, with repetitive reverse/forward blocking voltage of 1200 V and average forward current of 16 A. |
| 2 | A | passive | Anode of the thyristor, connected to the middle lead; the plastic overmolded backside tab is isolated (2500 V~). |
| 3 | G | input | Gate trigger terminal, with a gate trigger voltage of 1.3 V and a gate trigger current of 30 mA at 25°C (6 V supply). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Littelfuse/IXYS |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse/forward blocking voltage | VRRM/VDRM | | | 1200 | V | | 2 |
| Non-repetitive peak reverse/forward blocking voltage | VRSM/VDSM | | | 1300 | V | | 2 |
| Reverse current, drain current | IR/ID | | | 10 | µA | VR/D = VRRM/VDRM; TVJ = 25°C | 2 |
| Reverse current, drain current | IR/ID | | | 2 | mA | VR/D = VRRM/VDRM; TVJ = 150°C | 2 |
| Forward voltage drop | VT | | | 1.59 | V | TVJ = 25°C; IT = 30 A | 2 |
| Forward voltage drop | VT | | | 1.65 | V | TVJ = 25°C; IT = 60 A | 2 |
| Forward voltage drop | VT | | | 1.27 | V | TVJ = 125°C; IT = 30 A | 2 |
| Threshold voltage | V0 | | | 0.86 | V | TVJ = 150°C; on die level | 3 |
| Slope resistance | R0 | | | 10.1 | mΩ | TVJ = 150°C; on die level | 3 |
| Gate trigger voltage | VGT | | | 1.3 | V | VD = 6 V; TVJ = 25°C | 2 |
| Gate trigger voltage | VGT | | | 1.6 | V | VD = 6 V; TVJ = -40°C | 2 |
| Gate trigger current | IGT | | | 30 | mA | VD = 6 V; TVJ = 25°C | 2 |
| Gate trigger current | IGT | | | 50 | mA | VD = 6 V; TVJ = -40°C | 2 |
| Gate non-trigger voltage | VGD | | | 0.2 | V | | 2 |
| Gate non-trigger current | IGD | | | 1 | mA | | 2 |
| Latching current | IL | | | 90 | mA | tp = 10 µs; TVJ = 25°C; IG = 0.3 A | 2 |
| Holding current | IH | | | 60 | mA | VD = 6 V; RGK = ∞; TVJ = 25°C | 2 |
| Gate controlled delay time | tgd | | | 2 | µs | TVJ = 25°C; VD = ½ VDRM; IG = 0.3 A | 2 |
| Turn-off time | tq | | | 150 | µs | TVJ = 150°C; VR = 100 V; IT = 30 A | 2 |
| Critical rate of rise of voltage | (dv/dt)cr | 500 | | | V/µs | TVJ = 125°C; VD = ⅔ VDRM; RGK = ∞; method 1 (linear voltage rise) | 2 |
| Critical rate of rise of current | (di/dt)cr | | | 150 | A/µs | TVJ = 125°C; f = 50 Hz repetitive; IG = 0.3 A | 2 |
| Max. forward surge current | ITSM | | | 300 | A | t = 10 ms (50 Hz), sine; TVJ = 45°C; VR = 0 V | 2 |
| Max. forward surge current | ITSM | | | 325 | A | t = 8.3 ms (60 Hz), sine; TVJ = 45°C; VR = 0 V | 2 |
| Max. forward surge current | ITSM | | | 255 | A | t = 10 ms (50 Hz), sine; TVJ = 150°C; VR = 0 V | 2 |
| Max. forward surge current | ITSM | | | 275 | A | t = 8.3 ms (60 Hz), sine; TVJ = 150°C; VR = 0 V | 2 |
| I²t value for fusing | I²t | | | 450 | A²s | t = 10 ms (50 Hz), sine; TVJ = 45°C; VR = 0 V | 2 |
| I²t value for fusing | I²t | | | 440 | A²s | t = 8.3 ms (60 Hz), sine; TVJ = 45°C; VR = 0 V | 2 |
| I²t value for fusing | I²t | | | 325 | A²s | t = 10 ms (50 Hz), sine; TVJ = 150°C; VR = 0 V | 2 |
| I²t value for fusing | I²t | | | 315 | A²s | t = 8.3 ms (60 Hz), sine; TVJ = 150°C; VR = 0 V | 2 |
| Total power dissipation | Ptot | | | 50 | W | TC = 25°C | 2 |
| Max. gate power dissipation | PGM | | | 10 | W | tp = 30 µs | 2 |
| Max. gate power dissipation | PGM | | | 5 | W | tp = 300 µs | 2 |
| Average gate power dissipation | PGAV | | | 0.5 | W | | 2 |
| RMS current per terminal | IRMS | | | 35 | A | per terminal | 3 |
| Virtual junction temperature | TVJ | -55 | | 150 | °C | | 3 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 3 |
| Operation temperature | Top | -55 | | 125 | °C | | 3 |
| Mounting torque | MD | 0.4 | | 0.6 | Nm | | 3 |
| Mounting force with clip | FC | 20 | | 60 | N | with clip | 3 |
| Isolation voltage | VISOL | | | 2500 | V | t = 1 second; 50/60 Hz, RMS; IISOL ≤ 1 mA | 3 |
| Isolation voltage | VISOL | | | 2100 | V | t = 1 minute; 50/60 Hz, RMS; IISOL ≤ 1 mA | 3 |
| Creepage distance on surface | dSpp | 1.6 | | | mm | terminal to terminal | 3 |
| Striking distance through air | dApp | 1 | | | mm | terminal to terminal | 3 |
| Creepage distance on surface | dSpb | 2.5 | | | mm | terminal to backside | 3 |
| Striking distance through air | dApb | 2.5 | | | mm | terminal to backside | 3 |
| Thermal resistance junction to case | RthJC | | | 2.5 | K/W | junction to case | 2 |
## CAD (KiCad official)
- Symbol: `CS22-12IO1M`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `cs22-12io1m-etched.step` / `cs22-12io1m-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cs22-12io1m.step` / `cs22-12io1m.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Littelfuse/IXYS datasheet](docs/cs22-12io1m-datasheet.pdf) (6 pp, sha256 `a7614f067b57a613`, retrieved 2026-11-12, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cs22-12io1m-datasheet.pdf)