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CS22-12IO1M

Littelfuse/IXYS · TRIACs · TO-220

CS22-12IO1M from Littelfuse/IXYS, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the thyristor, with repetitive reverse/forward blocking voltage of 1200 V and average forward current of 16 A.
2 A passive Anode of the thyristor, connected to the middle lead; the plastic overmolded backside tab is isolated (2500 V~).
3 G input Gate trigger terminal, with a gate trigger voltage of 1.3 V and a gate trigger current of 30 mA at 25°C (6 V supply).

Key specifications

Parameter Value
Manufacturer Littelfuse/IXYS
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse/forward blocking voltage VRRM/VDRM 1200 V 2
Non-repetitive peak reverse/forward blocking voltage VRSM/VDSM 1300 V 2
Reverse current, drain current IR/ID 10 µA VR/D = VRRM/VDRM; TVJ = 25°C 2
Reverse current, drain current IR/ID 2 mA VR/D = VRRM/VDRM; TVJ = 150°C 2
Forward voltage drop VT 1.59 V TVJ = 25°C; IT = 30 A 2
Forward voltage drop VT 1.65 V TVJ = 25°C; IT = 60 A 2
Forward voltage drop VT 1.27 V TVJ = 125°C; IT = 30 A 2
Threshold voltage V0 0.86 V TVJ = 150°C; on die level 3
Slope resistance R0 10.1 mΩ TVJ = 150°C; on die level 3
Gate trigger voltage VGT 1.3 V VD = 6 V; TVJ = 25°C 2
Gate trigger voltage VGT 1.6 V VD = 6 V; TVJ = -40°C 2
Gate trigger current IGT 30 mA VD = 6 V; TVJ = 25°C 2
Gate trigger current IGT 50 mA VD = 6 V; TVJ = -40°C 2
Gate non-trigger voltage VGD 0.2 V 2
Gate non-trigger current IGD 1 mA 2
Latching current IL 90 mA tp = 10 µs; TVJ = 25°C; IG = 0.3 A 2
Holding current IH 60 mA VD = 6 V; RGK = ∞; TVJ = 25°C 2
Gate controlled delay time tgd 2 µs TVJ = 25°C; VD = ½ VDRM; IG = 0.3 A 2
Turn-off time tq 150 µs TVJ = 150°C; VR = 100 V; IT = 30 A 2
Critical rate of rise of voltage (dv/dt)cr 500 V/µs TVJ = 125°C; VD = ⅔ VDRM; RGK = ∞; method 1 (linear voltage rise) 2
Critical rate of rise of current (di/dt)cr 150 A/µs TVJ = 125°C; f = 50 Hz repetitive; IG = 0.3 A 2
Max. forward surge current ITSM 300 A t = 10 ms (50 Hz), sine; TVJ = 45°C; VR = 0 V 2
Max. forward surge current ITSM 325 A t = 8.3 ms (60 Hz), sine; TVJ = 45°C; VR = 0 V 2
Max. forward surge current ITSM 255 A t = 10 ms (50 Hz), sine; TVJ = 150°C; VR = 0 V 2
Max. forward surge current ITSM 275 A t = 8.3 ms (60 Hz), sine; TVJ = 150°C; VR = 0 V 2
I²t value for fusing I²t 450 A²s t = 10 ms (50 Hz), sine; TVJ = 45°C; VR = 0 V 2
I²t value for fusing I²t 440 A²s t = 8.3 ms (60 Hz), sine; TVJ = 45°C; VR = 0 V 2
I²t value for fusing I²t 325 A²s t = 10 ms (50 Hz), sine; TVJ = 150°C; VR = 0 V 2
I²t value for fusing I²t 315 A²s t = 8.3 ms (60 Hz), sine; TVJ = 150°C; VR = 0 V 2
Total power dissipation Ptot 50 W TC = 25°C 2
Max. gate power dissipation PGM 10 W tp = 30 µs 2
Max. gate power dissipation PGM 5 W tp = 300 µs 2
Average gate power dissipation PGAV 0.5 W 2
RMS current per terminal IRMS 35 A per terminal 3
Virtual junction temperature TVJ -55 150 °C 3
Storage temperature Tstg -55 150 °C 3
Operation temperature Top -55 125 °C 3
Mounting torque MD 0.4 0.6 Nm 3
Mounting force with clip FC 20 60 N with clip 3
Isolation voltage VISOL 2500 V t = 1 second; 50/60 Hz, RMS; IISOL ≤ 1 mA 3
Isolation voltage VISOL 2100 V t = 1 minute; 50/60 Hz, RMS; IISOL ≤ 1 mA 3
Creepage distance on surface dSpp 1.6 mm terminal to terminal 3
Striking distance through air dApp 1 mm terminal to terminal 3
Creepage distance on surface dSpb 2.5 mm terminal to backside 3
Striking distance through air dApb 2.5 mm terminal to backside 3
Thermal resistance junction to case RthJC 2.5 K/W junction to case 2

CAD (KiCad official)

  • Symbol: CS22-12IO1M
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: cs22-12io1m-etched.step / cs22-12io1m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cs22-12io1m.step / cs22-12io1m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Littelfuse/IXYS datasheet (6 pp, sha256 a7614f067b57a613, retrieved 2026-11-12, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF