CS22-12IO1M from Littelfuse/IXYS, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	K	passive	Cathode of the thyristor, with repetitive reverse/forward blocking voltage of 1200 V and average forward current of 16 A.
2	A	passive	Anode of the thyristor, connected to the middle lead; the plastic overmolded backside tab is isolated (2500 V~).
3	G	input	Gate trigger terminal, with a gate trigger voltage of 1.3 V and a gate trigger current of 30 mA at 25°C (6 V supply).

Key specifications

Parameter	Value
Manufacturer	Littelfuse/IXYS
Package	TO-220
Category	Triode/MOS Tube/Transistor
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Max	Unit	Conditions	Page
Repetitive peak reverse/forward blocking voltage	VRRM/VDRM		1200	V		2
Non-repetitive peak reverse/forward blocking voltage	VRSM/VDSM		1300	V		2
Reverse current, drain current	IR/ID		10	µA	VR/D = VRRM/VDRM; TVJ = 25°C	2
Reverse current, drain current	IR/ID		2	mA	VR/D = VRRM/VDRM; TVJ = 150°C	2
Forward voltage drop	VT		1.59	V	TVJ = 25°C; IT = 30 A	2
Forward voltage drop	VT		1.65	V	TVJ = 25°C; IT = 60 A	2
Forward voltage drop	VT		1.27	V	TVJ = 125°C; IT = 30 A	2
Threshold voltage	V0		0.86	V	TVJ = 150°C; on die level	3
Slope resistance	R0		10.1	mΩ	TVJ = 150°C; on die level	3
Gate trigger voltage	VGT		1.3	V	VD = 6 V; TVJ = 25°C	2
Gate trigger voltage	VGT		1.6	V	VD = 6 V; TVJ = -40°C	2
Gate trigger current	IGT		30	mA	VD = 6 V; TVJ = 25°C	2
Gate trigger current	IGT		50	mA	VD = 6 V; TVJ = -40°C	2
Gate non-trigger voltage	VGD		0.2	V		2
Gate non-trigger current	IGD		1	mA		2
Latching current	IL		90	mA	tp = 10 µs; TVJ = 25°C; IG = 0.3 A	2
Holding current	IH		60	mA	VD = 6 V; RGK = ∞; TVJ = 25°C	2
Gate controlled delay time	tgd		2	µs	TVJ = 25°C; VD = ½ VDRM; IG = 0.3 A	2
Turn-off time	tq		150	µs	TVJ = 150°C; VR = 100 V; IT = 30 A	2
Critical rate of rise of voltage	(dv/dt)cr	500		V/µs	TVJ = 125°C; VD = ⅔ VDRM; RGK = ∞; method 1 (linear voltage rise)	2
Critical rate of rise of current	(di/dt)cr		150	A/µs	TVJ = 125°C; f = 50 Hz repetitive; IG = 0.3 A	2
Max. forward surge current	ITSM		300	A	t = 10 ms (50 Hz), sine; TVJ = 45°C; VR = 0 V	2
Max. forward surge current	ITSM		325	A	t = 8.3 ms (60 Hz), sine; TVJ = 45°C; VR = 0 V	2
Max. forward surge current	ITSM		255	A	t = 10 ms (50 Hz), sine; TVJ = 150°C; VR = 0 V	2
Max. forward surge current	ITSM		275	A	t = 8.3 ms (60 Hz), sine; TVJ = 150°C; VR = 0 V	2
I²t value for fusing	I²t		450	A²s	t = 10 ms (50 Hz), sine; TVJ = 45°C; VR = 0 V	2
I²t value for fusing	I²t		440	A²s	t = 8.3 ms (60 Hz), sine; TVJ = 45°C; VR = 0 V	2
I²t value for fusing	I²t		325	A²s	t = 10 ms (50 Hz), sine; TVJ = 150°C; VR = 0 V	2
I²t value for fusing	I²t		315	A²s	t = 8.3 ms (60 Hz), sine; TVJ = 150°C; VR = 0 V	2
Total power dissipation	Ptot		50	W	TC = 25°C	2
Max. gate power dissipation	PGM		10	W	tp = 30 µs	2
Max. gate power dissipation	PGM		5	W	tp = 300 µs	2
Average gate power dissipation	PGAV		0.5	W		2
RMS current per terminal	IRMS		35	A	per terminal	3
Virtual junction temperature	TVJ	-55	150	°C		3
Storage temperature	Tstg	-55	150	°C		3
Operation temperature	Top	-55	125	°C		3
Mounting torque	MD	0.4	0.6	Nm		3
Mounting force with clip	FC	20	60	N	with clip	3
Isolation voltage	VISOL		2500	V	t = 1 second; 50/60 Hz, RMS; IISOL ≤ 1 mA	3
Isolation voltage	VISOL		2100	V	t = 1 minute; 50/60 Hz, RMS; IISOL ≤ 1 mA	3
Creepage distance on surface	dSpp	1.6		mm	terminal to terminal	3
Striking distance through air	dApp	1		mm	terminal to terminal	3
Creepage distance on surface	dSpb	2.5		mm	terminal to backside	3
Striking distance through air	dApb	2.5		mm	terminal to backside	3
Thermal resistance junction to case	RthJC		2.5	K/W	junction to case	2

CAD (KiCad official)

Symbol: CS22-12IO1M
Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
3D model: TO-220 (KiCad packages3D, STEP)
3D model files: cs22-12io1m-etched.step / cs22-12io1m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cs22-12io1m.step / cs22-12io1m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Littelfuse/IXYS datasheet (6 pp, sha256 a7614f067b57a613, retrieved 2026-11-12, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

CS22-12IO1M

Verified CS22-12IO1M

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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