# CR4N65A4K

**CRMICRO** · MOSFETs · TO-252

CR4N65A4K from CRMICRO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage limited to ±30 V, threshold 2.0 to 4.0 V at VDS=VGS, ID=250µA. |
| 2 | D | passive | Drain; drain-to-source voltage rated 650 V and continuous drain current 4 A at TC=25°C. |
| 3 | S | passive | Source; body diode continuous source current up to 4 A, pulsed 16 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS |  |  | 650 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 4 | A |  | 1 |
| Continuous Drain Current | ID |  |  | 2.5 | A | TC = 100 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 16 | A | Repetitive rating; pulse width limited by maximum junction temperature (a1) | 1 |
| Gate-to-Source Voltage | VGS | -30 |  | 30 | V |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 200 | mJ | L=10mH, ID=6.3A, Start TJ=25℃ (a2) | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 5 | V/ns | ISD=4A, di/dt≤100A/us, VDD≤BVDS, Start TJ=25℃ (a3) | 1 |
| Power Dissipation | PD |  |  | 75 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | ℃ |  | 1 |
| Junction-to-Case Thermal Resistance | RθJC |  |  | 1.67 | ℃/W |  | 3 |
| Junction-to-Ambient Thermal Resistance | RθJA |  |  | 100 | ℃/W |  | 3 |
| Drain to Source Breakdown Voltage | VDSS | 650 |  |  | V | VGS=0V, ID=250µA | 2 |
| Drain to Source Leakage Current | IDSS |  |  | 1 | µA | VDS =650V, VGS= 0V, TJ = 25℃ | 2 |
| Drain to Source Leakage Current | IDSS |  |  | 100 | µA | VDS =520V, VGS= 0V, TJ = 125℃ | 2 |
| Gate to Source Forward Leakage | IGSS(F) |  |  | 100 | nA | VGS =+30V | 2 |
| Gate to Source Reverse Leakage | IGSS(R) |  |  | -100 | nA | VGS =-30V | 2 |
| Drain-to-Source On-Resistance | RDS(ON) |  | 2.4 | 2.8 | Ω | VGS=10V,ID=2A | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 |  | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Continuous Source Current (Body Diode) | IS |  |  | 4 | A |  | 3 |
| Maximum Pulsed Current (Body Diode) | ISM |  |  | 16 | A |  | 3 |
| Diode Forward Voltage | VSD |  |  | 1.5 | V | IS=4.0A,VGS=0V | 3 |
| Bvdss Temperature Coefficient | ΔBVDSS/ΔTJ |  | 0.67 |  | V/℃ | ID=250uA,Reference25℃ | 2 |
| Forward Transconductance | gfs |  | 3.5 |  | S | VDS=15V, ID =2A | 2 |
| Input Capacitance | Ciss |  | 564 |  | pF | VGS = 0V VDS = 25V f = 1.0MHz | 2 |
| Output Capacitance | Coss |  | 41 |  | pF | VGS = 0V VDS = 25V f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 2.4 |  | pF | VGS = 0V VDS = 25V f = 1.0MHz | 2 |
| Turn-on Delay Time | td(ON) |  | 13 |  | ns | ID =4A VDD = 325V RG =10Ω | 2 |
| Rise Time | tr |  | 9 |  | ns | ID =4A VDD = 325V RG =10Ω | 2 |
| Turn-Off Delay Time | td(OFF) |  | 24 |  | ns | ID =4A VDD = 325V RG =10Ω | 2 |
| Fall Time | tf |  | 10 |  | ns | ID =4A VDD = 325V RG =10Ω | 2 |
| Total Gate Charge | Qg |  | 15.8 |  | nC | ID =4A VDD =520V VGS = 10V | 2 |
| Gate to Source Charge | Qgs |  | 3 |  | nC | ID =4A VDD =520V VGS = 10V | 2 |
| Gate to Drain (Miller) Charge | Qgd |  | 8.5 |  | nC | ID =4A VDD =520V VGS = 10V | 2 |
| Reverse Recovery Time | trr |  | 610 |  | ns | IS=4.0A, Tj = 25℃, dIF/dt=100A/us, VGS=0V | 3 |
| Reverse Recovery Charge | Qrr |  | 2930 |  | nC | IS=4.0A, Tj = 25℃, dIF/dt=100A/us, VGS=0V | 3 |
| Reverse Recovery Current | IRRM |  | 9.7 |  | A | IS=4.0A, Tj = 25℃, dIF/dt=100A/us, VGS=0V | 3 |

## CAD (KiCad official)

- Symbol: `CR4N65A4K`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `cr4n65a4k-etched.step` / `cr4n65a4k-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cr4n65a4k.step` / `cr4n65a4k.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [CRMICRO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588904101022715904) (10 pp, sha256 `edb5c793b991722b`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/cr4n65a4k-datasheet.pdf)