component
CR4N65A4K
Public Made by Adomby adom
CRMICRO MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
cr4n65a4k: specified limits as data (metadata.characteristics, 36 rows from the datasheet)
2 files changed
+483−1
README.md+43@@ -21,6 +21,49 @@ CR4N65A4K from CRMICRO, in a TO-252. Pinout and pin descriptions extracted from | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-to-Source Voltage | VDSS | | | 650 | V | | 1 |+| Continuous Drain Current | ID | | | 4 | A | | 1 |+| Continuous Drain Current | ID | | | 2.5 | A | TC = 100 °C | 1 |+| Pulsed Drain Current | IDM | | | 16 | A | Repetitive rating; pulse width limited by maximum junction temperature (a1) | 1 |+| Gate-to-Source Voltage | VGS | -30 | | 30 | V | | 1 |+| Single Pulse Avalanche Energy | EAS | | | 200 | mJ | L=10mH, ID=6.3A, Start TJ=25℃ (a2) | 1 |+| Peak Diode Recovery dv/dt | dv/dt | | | 5 | V/ns | ISD=4A, di/dt≤100A/us, VDD≤BVDS, Start TJ=25℃ (a3) | 1 |+| Power Dissipation | PD | | | 75 | W | | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ℃ | | 1 |+| Junction-to-Case Thermal Resistance | RθJC | | | 1.67 | ℃/W | | 3 |+| Junction-to-Ambient Thermal Resistance | RθJA | | | 100 | ℃/W | | 3 |+| Drain to Source Breakdown Voltage | VDSS | 650 | | | V | VGS=0V, ID=250µA | 2 |+| Drain to Source Leakage Current | IDSS | | | 1 | µA | VDS =650V, VGS= 0V, TJ = 25℃ | 2 |+| Drain to Source Leakage Current | IDSS | | | 100 | µA | VDS =520V, VGS= 0V, TJ = 125℃ | 2 |+| Gate to Source Forward Leakage | IGSS(F) | | | 100 | nA | VGS =+30V | 2 |+| Gate to Source Reverse Leakage | IGSS(R) | | | -100 | nA | VGS =-30V | 2 |+| Drain-to-Source On-Resistance | RDS(ON) | | 2.4 | 2.8 | Ω | VGS=10V,ID=2A | 2 |+| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VDS = VGS, ID = 250µA | 2 |+| Continuous Source Current (Body Diode) | IS | | | 4 | A | | 3 |+| Maximum Pulsed Current (Body Diode) | ISM | | | 16 | A | | 3 |+| Diode Forward Voltage | VSD | | | 1.5 | V | IS=4.0A,VGS=0V | 3 |+| Bvdss Temperature Coefficient | ΔBVDSS/ΔTJ | | 0.67 | | V/℃ | ID=250uA,Reference25℃ | 2 |+| Forward Transconductance | gfs | | 3.5 | | S | VDS=15V, ID =2A | 2 |+| Input Capacitance | Ciss | | 564 | | pF | VGS = 0V VDS = 25V f = 1.0MHz | 2 |+| Output Capacitance | Coss | | 41 | | pF | VGS = 0V VDS = 25V f = 1.0MHz | 2 |+| Reverse Transfer Capacitance | Crss | | 2.4 | | pF | VGS = 0V VDS = 25V f = 1.0MHz | 2 |+| Turn-on Delay Time | td(ON) | | 13 | | ns | ID =4A VDD = 325V RG =10Ω | 2 |+| Rise Time | tr | | 9 | | ns | ID =4A VDD = 325V RG =10Ω | 2 |+| Turn-Off Delay Time | td(OFF) | | 24 | | ns | ID =4A VDD = 325V RG =10Ω | 2 |+| Fall Time | tf | | 10 | | ns | ID =4A VDD = 325V RG =10Ω | 2 |+| Total Gate Charge | Qg | | 15.8 | | nC | ID =4A VDD =520V VGS = 10V | 2 |+| Gate to Source Charge | Qgs | | 3 | | nC | ID =4A VDD =520V VGS = 10V | 2 |+| Gate to Drain (Miller) Charge | Qgd | | 8.5 | | nC | ID =4A VDD =520V VGS = 10V | 2 |+| Reverse Recovery Time | trr | | 610 | | ns | IS=4.0A, Tj = 25℃, dIF/dt=100A/us, VGS=0V | 3 |+| Reverse Recovery Charge | Qrr | | 2930 | | nC | IS=4.0A, Tj = 25℃, dIF/dt=100A/us, VGS=0V | 3 |+| Reverse Recovery Current | IRRM | | 9.7 | | A | IS=4.0A, Tj = 25℃, dIF/dt=100A/us, VGS=0V | 3 |+ ## CAD (KiCad official) - Symbol: `CR4N65A4K`
page.json+440−1@@ -148,6 +148,445 @@ "Package": "TO-252", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "edb5c793b991722b",+ "rows": [+ {+ "name": "Drain-to-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 650,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "TC = 100 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "Repetitive rating; pulse width limited by maximum junction temperature (a1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "L=10mH, ID=6.3A, Start TJ=25℃ (a2)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Peak Diode Recovery dv/dt",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "ISD=4A, di/dt≤100A/us, VDD≤BVDS, Start TJ=25℃ (a3)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 75,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Case Thermal Resistance",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 1.67,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain to Source Breakdown Voltage",+ "symbol": "VDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 650,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain to Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS =650V, VGS= 0V, TJ = 25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain to Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS =520V, VGS= 0V, TJ = 125℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate to Source Forward Leakage",+ "symbol": "IGSS(F)",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS =+30V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate to Source Reverse Leakage",+ "symbol": "IGSS(R)",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VGS =-30V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 2.4,+ "max": 2.8,+ "conditions": "VGS=10V,ID=2A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(TH)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": null,+ "max": 4,+ "conditions": "VDS = VGS, ID = 250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source Current (Body Diode)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Maximum Pulsed Current (Body Diode)",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.5,+ "conditions": "IS=4.0A,VGS=0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Bvdss Temperature Coefficient",+ "symbol": "ΔBVDSS/ΔTJ",+ "kind": "temperature_coefficient",+ "unit": "V/℃",+ "min": null,+ "typ": 0.67,+ "max": null,+ "conditions": "ID=250uA,Reference25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 3.5,+ "max": null,+ "conditions": "VDS=15V, ID =2A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 564,+ "max": null,+ "conditions": "VGS = 0V VDS = 25V f = 1.0MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 41,+ "max": null,+ "conditions": "VGS = 0V VDS = 25V f = 1.0MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 2.4,+ "max": null,+ "conditions": "VGS = 0V VDS = 25V f = 1.0MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on Delay Time",+ "symbol": "td(ON)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 13,+ "max": null,+ "conditions": "ID =4A VDD = 325V RG =10Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 9,+ "max": null,+ "conditions": "ID =4A VDD = 325V RG =10Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(OFF)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 24,+ "max": null,+ "conditions": "ID =4A VDD = 325V RG =10Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 10,+ "max": null,+ "conditions": "ID =4A VDD = 325V RG =10Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 15.8,+ "max": null,+ "conditions": "ID =4A VDD =520V VGS = 10V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate to Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 3,+ "max": null,+ "conditions": "ID =4A VDD =520V VGS = 10V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate to Drain (Miller) Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 8.5,+ "max": null,+ "conditions": "ID =4A VDD =520V VGS = 10V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 610,+ "max": null,+ "conditions": "IS=4.0A, Tj = 25℃, dIF/dt=100A/us, VGS=0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2930,+ "max": null,+ "conditions": "IS=4.0A, Tj = 25℃, dIF/dt=100A/us, VGS=0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Current",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": 9.7,+ "max": null,+ "conditions": "IS=4.0A, Tj = 25℃, dIF/dt=100A/us, VGS=0V",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +628,4 @@ "visibility": { "public": true }-}+}