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CR4N65A4K

Public Made by Adom

by adom

CRMICRO MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs cr4n65a4k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
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cr4n65a4k-etched.glb cr4n65a4k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
cr4n65a4k-etched.step cr4n65a4k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
cr4n65a4k-hero.glb cr4n65a4k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
cr4n65a4k-hero.overlay.json cr4n65a4k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
cr4n65a4k.glb Publish 0.1.0 · Ray 1mo ago
cr4n65a4k.kicad_mod Publish 0.1.0 · Ray 1mo ago
cr4n65a4k.kicad_sym Publish 0.1.0 · Ray 1mo ago
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cr4n65a4k.step Publish 0.1.0 · Ray 1mo ago
package.json cr4n65a4k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
page.json cr4n65a4k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
README.md cr4n65a4k: specified limits as data (metadata.characteristics, 36 rows from the datasheet) · Ray 24d ago

CR4N65A4K

CRMICRO · MOSFETs · TO-252

CR4N65A4K from CRMICRO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage limited to ±30 V, threshold 2.0 to 4.0 V at VDS=VGS, ID=250µA.
2 D passive Drain; drain-to-source voltage rated 650 V and continuous drain current 4 A at TC=25°C.
3 S passive Source; body diode continuous source current up to 4 A, pulsed 16 A.

Key specifications

Parameter Value
Manufacturer CRMICRO
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 650 V 1
Continuous Drain Current ID 4 A 1
Continuous Drain Current ID 2.5 A TC = 100 °C 1
Pulsed Drain Current IDM 16 A Repetitive rating; pulse width limited by maximum junction temperature (a1) 1
Gate-to-Source Voltage VGS -30 30 V 1
Single Pulse Avalanche Energy EAS 200 mJ L=10mH, ID=6.3A, Start TJ=25℃ (a2) 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns ISD=4A, di/dt≤100A/us, VDD≤BVDS, Start TJ=25℃ (a3) 1
Power Dissipation PD 75 W 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ℃ 1
Junction-to-Case Thermal Resistance RθJC 1.67 ℃/W 3
Junction-to-Ambient Thermal Resistance RθJA 100 ℃/W 3
Drain to Source Breakdown Voltage VDSS 650 V VGS=0V, ID=250µA 2
Drain to Source Leakage Current IDSS 1 µA VDS =650V, VGS= 0V, TJ = 25℃ 2
Drain to Source Leakage Current IDSS 100 µA VDS =520V, VGS= 0V, TJ = 125℃ 2
Gate to Source Forward Leakage IGSS(F) 100 nA VGS =+30V 2
Gate to Source Reverse Leakage IGSS(R) -100 nA VGS =-30V 2
Drain-to-Source On-Resistance RDS(ON) 2.4 2.8 Ω VGS=10V,ID=2A 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250µA 2
Continuous Source Current (Body Diode) IS 4 A 3
Maximum Pulsed Current (Body Diode) ISM 16 A 3
Diode Forward Voltage VSD 1.5 V IS=4.0A,VGS=0V 3
Bvdss Temperature Coefficient ΔBVDSS/ΔTJ 0.67 V/℃ ID=250uA,Reference25℃ 2
Forward Transconductance gfs 3.5 S VDS=15V, ID =2A 2
Input Capacitance Ciss 564 pF VGS = 0V VDS = 25V f = 1.0MHz 2
Output Capacitance Coss 41 pF VGS = 0V VDS = 25V f = 1.0MHz 2
Reverse Transfer Capacitance Crss 2.4 pF VGS = 0V VDS = 25V f = 1.0MHz 2
Turn-on Delay Time td(ON) 13 ns ID =4A VDD = 325V RG =10Ω 2
Rise Time tr 9 ns ID =4A VDD = 325V RG =10Ω 2
Turn-Off Delay Time td(OFF) 24 ns ID =4A VDD = 325V RG =10Ω 2
Fall Time tf 10 ns ID =4A VDD = 325V RG =10Ω 2
Total Gate Charge Qg 15.8 nC ID =4A VDD =520V VGS = 10V 2
Gate to Source Charge Qgs 3 nC ID =4A VDD =520V VGS = 10V 2
Gate to Drain (Miller) Charge Qgd 8.5 nC ID =4A VDD =520V VGS = 10V 2
Reverse Recovery Time trr 610 ns IS=4.0A, Tj = 25℃, dIF/dt=100A/us, VGS=0V 3
Reverse Recovery Charge Qrr 2930 nC IS=4.0A, Tj = 25℃, dIF/dt=100A/us, VGS=0V 3
Reverse Recovery Current IRRM 9.7 A IS=4.0A, Tj = 25℃, dIF/dt=100A/us, VGS=0V 3

CAD (KiCad official)

  • Symbol: CR4N65A4K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: cr4n65a4k-etched.step / cr4n65a4k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cr4n65a4k.step / cr4n65a4k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CRMICRO datasheet (10 pp, sha256 edb5c793b991722b, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF