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CMSA6354

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Cmos(广东场效应半导体) , DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CMSA6354

Cmos(广东场效应半导体) · IC · DFN-8(5x6)

CMSA6354 from Cmos(广东场效应半导体), in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives VDS of 30 V and continuous drain current of 65 A at TC=25℃ for the device.
2 S passive Source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives VGS limits of ±20 V for the device.
3 S passive Source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives a maximum total power dissipation of 40 W at TC=25℃ for the device.
4 G input Gate terminal of the MOSFET; the datasheet gives VGS(th) of 1 V to 3 V at ID=250μA and VGS limits of ±20 V.
5 D passive Drain terminal of the N-channel enhancement-mode MOSFET; the datasheet gives BVDSS of 30 V minimum at ID=250μA.
6 D passive Drain terminal of the N-channel enhancement-mode MOSFET; the datasheet gives RDS(ON) of 5.5 mΩ maximum at VGS=10 V and ID=20A.
7 D passive Drain terminal of the N-channel enhancement-mode MOSFET; the datasheet gives a pulsed drain current rating of 195 A.
8 D passive Drain terminal of the N-channel enhancement-mode MOSFET; the datasheet gives an operating junction temperature range of -55 to 150 ℃.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Cmos(广东场效应半导体)
Package DFN-8(5x6)
Category
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 65 A TC=25℃ 1
Continuous Drain Current ID 45 A TC=100℃ 1
Pulsed Drain Current IDM 195 A 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Single Pulse Avalanche Energy EAS 132 mJ VDD=25V, VGS=10V, L=0.5mH, IAS=23A (Note 1) 1
Total Power Dissipation PD 40 W TC=25℃ 1
Thermal Resistance Junction-ambient (Steady-State) RθJA 55 ℃/W 1
Thermal Resistance Junction-case (Steady-State) RθJC 3.1 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 4.6 5.5 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 9.6 13 mΩ VGS=4.5V, ID=20A 2
Gate Threshold Voltage VGS(th) 1 3 V VGS=VDS, ID=250μA 2
Drain-Source Leakage Current IDSS 1 uA VDS=30V, VGS=0V 2
Diode continuous forward current IS 65 A 2
Diode pulse current IS,pulse 195 A 2
Diode Forward Voltage VSD 0.87 1.2 V VGS=0V, IF=20A, Tj=25℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS = ±20V 2

CAD (KiCad official)

  • Symbol: CMSA6354
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: cmsa6354-etched.step / cmsa6354-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmsa6354.step / cmsa6354.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256 9845ef08ec63494c, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF