component
CMSA6354
Public Made by Adomby adom
Cmos(广东场效应半导体) , DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CMSA6354
Cmos(广东场效应半导体) · IC · DFN-8(5x6)
CMSA6354 from Cmos(广东场效应半导体), in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives VDS of 30 V and continuous drain current of 65 A at TC=25℃ for the device. |
| 2 | S | passive | Source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives VGS limits of ±20 V for the device. |
| 3 | S | passive | Source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives a maximum total power dissipation of 40 W at TC=25℃ for the device. |
| 4 | G | input | Gate terminal of the MOSFET; the datasheet gives VGS(th) of 1 V to 3 V at ID=250μA and VGS limits of ±20 V. |
| 5 | D | passive | Drain terminal of the N-channel enhancement-mode MOSFET; the datasheet gives BVDSS of 30 V minimum at ID=250μA. |
| 6 | D | passive | Drain terminal of the N-channel enhancement-mode MOSFET; the datasheet gives RDS(ON) of 5.5 mΩ maximum at VGS=10 V and ID=20A. |
| 7 | D | passive | Drain terminal of the N-channel enhancement-mode MOSFET; the datasheet gives a pulsed drain current rating of 195 A. |
| 8 | D | passive | Drain terminal of the N-channel enhancement-mode MOSFET; the datasheet gives an operating junction temperature range of -55 to 150 ℃. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | DFN-8(5x6) |
| Category | |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 65 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 45 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 195 | A | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 132 | mJ | VDD=25V, VGS=10V, L=0.5mH, IAS=23A (Note 1) | 1 | ||
| Total Power Dissipation | PD | 40 | W | TC=25℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady-State) | RθJA | 55 | ℃/W | 1 | |||
| Thermal Resistance Junction-case (Steady-State) | RθJC | 3.1 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 4.6 | 5.5 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 9.6 | 13 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VGS=VDS, ID=250μA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=30V, VGS=0V | 2 | ||
| Diode continuous forward current | IS | 65 | A | 2 | |||
| Diode pulse current | IS,pulse | 195 | A | 2 | |||
| Diode Forward Voltage | VSD | 0.87 | 1.2 | V | VGS=0V, IF=20A, Tj=25℃ | 2 | |
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V | 2 |
CAD (KiCad official)
- Symbol:
CMSA6354 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
cmsa6354-etched.step/cmsa6354-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmsa6354.step/cmsa6354.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256
9845ef08ec63494c, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CMSA6354
**Cmos(广东场效应半导体)** · IC · DFN-8(5x6)
CMSA6354 from Cmos(广东场效应半导体), in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives VDS of 30 V and continuous drain current of 65 A at TC=25℃ for the device. |
| 2 | S | passive | Source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives VGS limits of ±20 V for the device. |
| 3 | S | passive | Source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives a maximum total power dissipation of 40 W at TC=25℃ for the device. |
| 4 | G | input | Gate terminal of the MOSFET; the datasheet gives VGS(th) of 1 V to 3 V at ID=250μA and VGS limits of ±20 V. |
| 5 | D | passive | Drain terminal of the N-channel enhancement-mode MOSFET; the datasheet gives BVDSS of 30 V minimum at ID=250μA. |
| 6 | D | passive | Drain terminal of the N-channel enhancement-mode MOSFET; the datasheet gives RDS(ON) of 5.5 mΩ maximum at VGS=10 V and ID=20A. |
| 7 | D | passive | Drain terminal of the N-channel enhancement-mode MOSFET; the datasheet gives a pulsed drain current rating of 195 A. |
| 8 | D | passive | Drain terminal of the N-channel enhancement-mode MOSFET; the datasheet gives an operating junction temperature range of -55 to 150 ℃. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | DFN-8(5x6) |
| Category | |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 65 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID | | | 45 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 195 | A | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 132 | mJ | VDD=25V, VGS=10V, L=0.5mH, IAS=23A (Note 1) | 1 |
| Total Power Dissipation | PD | | | 40 | W | TC=25℃ | 1 |
| Thermal Resistance Junction-ambient (Steady-State) | RθJA | | | 55 | ℃/W | | 1 |
| Thermal Resistance Junction-case (Steady-State) | RθJC | | | 3.1 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 4.6 | 5.5 | mΩ | VGS=10V, ID=20A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 9.6 | 13 | mΩ | VGS=4.5V, ID=20A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | 3 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=30V, VGS=0V | 2 |
| Diode continuous forward current | IS | | | 65 | A | | 2 |
| Diode pulse current | IS,pulse | | | 195 | A | | 2 |
| Diode Forward Voltage | VSD | | 0.87 | 1.2 | V | VGS=0V, IF=20A, Tj=25℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS = ±20V | 2 |
## CAD (KiCad official)
- Symbol: `CMSA6354`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `cmsa6354-etched.step` / `cmsa6354-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cmsa6354.step` / `cmsa6354.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Cmos(广东场效应半导体) datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603110616575844352) (3 pp, sha256 `9845ef08ec63494c`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cmsa6354-datasheet.pdf)