main
Ray Set visibility: public 00abd65 2d ago
{
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  "type": "component",
  "slug": "cmsa6354",
  "title": "CMSA6354",
  "brief": "Cmos(广东场效应半导体) , DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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  "component": {
    "mpn": "CMSA6354",
    "manufacturer": "Cmos(广东场效应半导体)",
    "package": "DFN-8(5x6)",
    "pin_count": 9,
    "category": "IC",
    "subcategory": "IC",
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      "lbr": "cmsa6354.lbr"
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    "distributor_links": {
      "lcsc": "C19188069"
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    "distributor_check": {
      "checked_at": "2026-10-21T00:32:22Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
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    },
    "pins": [
      {
        "number": "1",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives VDS of 30 V and continuous drain current of 65 A at TC=25℃ for the device."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives VGS limits of ±20 V for the device."
      },
      {
        "number": "3",
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        "type": "passive",
        "description": "Source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives a maximum total power dissipation of 40 W at TC=25℃ for the device."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate terminal of the MOSFET; the datasheet gives VGS(th) of 1 V to 3 V at ID=250μA and VGS limits of ±20 V."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel enhancement-mode MOSFET; the datasheet gives BVDSS of 30 V minimum at ID=250μA."
      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel enhancement-mode MOSFET; the datasheet gives RDS(ON) of 5.5 mΩ maximum at VGS=10 V and ID=20A."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel enhancement-mode MOSFET; the datasheet gives a pulsed drain current rating of 195 A."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel enhancement-mode MOSFET; the datasheet gives an operating junction temperature range of -55 to 150 ℃."
      },
      {
        "number": "9",
        "name": "EP",
        "type": "passive",
        "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
      }
    ],
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        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The datasheet's DFN-8 5x6 pin configuration lists only the terminal labels in the order S, S, S, G, ; The datasheet gives no per-pin electrical functions. Descriptions cite the device-level ratings from",
          "1/9 pins cited to the wrong page (name found elsewhere): ['7:D@p1']"
        ],
        "pages_sent": 3,
        "cost_usd": 0.0214,
        "at": "2026-10-21T00:29:56"
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        "sha256": "9845ef08ec63494c",
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      "cad": "KiCad official (CC-BY-SA 4.0)",
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        "described": 9,
        "cites_pages": true,
        "refuses_to_fabricate": true
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        "sha256": "13e5a2a05f78c2a0952534b2fb187d0be154d366a431374e398c7e2032779f1b",
        "checked": "2026-10-21",
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        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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  "metadata": {
    "specs": {
      "Manufacturer": "Cmos(广东场效应半导体)",
      "Package": "DFN-8(5x6)",
      "Category": "",
      "Pins": "9"
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    "characteristics": {
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      "source": "datasheet",
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      "rows": [
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          "symbol": "VDS",
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          "conditions": "",
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          "conditions": "TC=100℃",
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          "name": "Single Pulse Avalanche Energy",
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          "unit": "mJ",
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          "conditions": "VDD=25V, VGS=10V, L=0.5mH, IAS=23A (Note 1)",
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        {
          "name": "Thermal Resistance Junction-case (Steady-State)",
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          "unit": "℃/W",
          "min": null,
          "typ": null,
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          "min": 30,
          "typ": null,
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        {
          "name": "Static Drain-Source On-Resistance",
          "symbol": "RDS(ON)",
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          "unit": "mΩ",
          "min": null,
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          "max": 13,
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        {
          "name": "Gate Threshold Voltage",
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          "conditions": "VDS=30V, VGS=0V",
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        },
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          "name": "Diode continuous forward current",
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          "max": 65,
          "conditions": "",
          "source_page": 2,
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        {
          "name": "Diode pulse current",
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          "unit": "A",
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          "max": 195,
          "conditions": "",
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          "unit": "V",
          "min": null,
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          "max": 1.2,
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          "source_page": 2,
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        },
        {
          "name": "Gate-Source Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
          "typ": null,
          "max": 100,
          "conditions": "VGS = ±20V",
          "source_page": 2,
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  "author": {
    "name": "Ray",
    "email": "[email protected]"
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