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CMSA055N06

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Cmos(广东场效应半导体) MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CMSA055N06

Cmos(广东场效应半导体) · MOSFETs · DFN-8(5x6)

CMSA055N06 from Cmos(广东场效应半导体), in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; the datasheet gives no separate pin-level limit, and the device is rated VDS 60 V with continuous ID 90 A at TC=25℃.
2 S passive Source terminal of the N-channel MOSFET; the datasheet gives no separate pin-level limit, and the device is rated VDS 60 V with continuous ID 90 A at TC=25℃.
3 S passive Source terminal of the N-channel MOSFET; the datasheet gives no separate pin-level limit, and the device is rated VDS 60 V with continuous ID 90 A at TC=25℃.
4 G input Gate terminal of the MOSFET; gate-source voltage is rated ±20 V (VGS) and VGS(th) is 1 to 3 V at ID=250 μA.
5 D passive Drain terminal of the N-channel MOSFET; drain-source breakdown voltage is 60 V minimum (BVDSS) at VGS=0 V, ID=250 μA.
6 D passive Drain terminal of the N-channel MOSFET; drain-source breakdown voltage is 60 V minimum (BVDSS) at VGS=0 V, ID=250 μA.
7 D passive Drain terminal of the N-channel MOSFET; drain-source breakdown voltage is 60 V minimum (BVDSS) at VGS=0 V, ID=250 μA.
8 D passive Drain terminal of the N-channel MOSFET; drain-source breakdown voltage is 60 V minimum (BVDSS) at VGS=0 V, ID=250 μA.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Cmos(广东场效应半导体)
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 90 A TC=25℃ 1
Continuous Drain Current ID 66 A TC=100℃ 1
Pulsed Drain Current IDM 360 A 1
Single Pulse Avalanche Energy EAS 156 mJ VDS=40V, VGS=10V, L=0.5mH, IAS=25A (per note 1) 1
Total Power Dissipation PD 100 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ 150 ℃ 1
Thermal Resistance Junction-to-Ambient RθJA 31.3 ℃/ W 1
Thermal Resistance Junction-to-Case RθJC 1.25 ℃/ W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 4.1 5.5 mΩ VGS=10V, ID=28A 2
Static Drain-Source On-Resistance RDS(ON) 6.7 8 mΩ VGS=4.5V, ID=20A 2
Gate Threshold Voltage VGS(th) 1 3 V VGS=VDS, ID=250μA 2
Drain-Source Leakage Current IDSS 1 uA VDS=60V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Diode continuous forward current IS 90 A 2
Diode pulse current IS,pulse 360 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IF=28A, Tj=25℃ 2

CAD (KiCad official)

  • Symbol: CMSA055N06
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: cmsa055n06-etched.step / cmsa055n06-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmsa055n06.step / cmsa055n06.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256 9a1a5c2407c3f66f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF