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Ray Set visibility: public 3ad4332 4h ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "cmsa055n06",
  "title": "CMSA055N06",
  "brief": "Cmos(广东场效应半导体) MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
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  "component": {
    "mpn": "CMSA055N06",
    "manufacturer": "Cmos(广东场效应半导体)",
    "package": "DFN-8(5x6)",
    "pin_count": 9,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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    "distributor_links": {
      "lcsc": "C7427445"
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    "distributor_check": {
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      "source": "Component Ocean /api/assign-pns",
      "digikey": {
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        "status": "quota"
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      },
      {
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      },
      {
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      },
      {
        "number": "4",
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        "type": "input",
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      },
      {
        "number": "5",
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      },
      {
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      },
      {
        "number": "8",
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        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET; drain-source breakdown voltage is 60 V minimum (BVDSS) at VGS=0 V, ID=250 μA."
      },
      {
        "number": "9",
        "name": "EP",
        "type": "passive",
        "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
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        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The pin configuration is only available as extracted text (the list 'S S S G D D D D' with a 'Pin 1'; The datasheet does not state a pin-level electrical limit for source or drain pins; the descriptions",
          "exposed pad 9 added from the footprint"
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        "cost_usd": 0.0223,
        "at": "2026-10-18T15:12:18"
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        "sha256": "9a1a5c2407c3f66f",
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
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        "described": 9,
        "cites_pages": true,
        "refuses_to_fabricate": true
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  "metadata": {
    "specs": {
      "Manufacturer": "Cmos(广东场效应半导体)",
      "Package": "DFN-8(5x6)",
      "Category": "Transistors/Thyristors",
      "Pins": "9"
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    "characteristics": {
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          "name": "Total Power Dissipation",
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        {
          "name": "Storage Temperature Range",
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          "name": "Thermal Resistance Junction-to-Ambient",
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          "min": 60,
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        {
          "name": "Static Drain-Source On-Resistance",
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          "unit": "mΩ",
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        {
          "name": "Static Drain-Source On-Resistance",
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        {
          "name": "Gate Threshold Voltage",
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          "name": "Gate-Source Leakage Current",
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          "name": "Diode continuous forward current",
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        },
        {
          "name": "Diode pulse current",
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          "max": 1.2,
          "conditions": "VGS=0V, IF=28A, Tj=25℃",
          "source_page": 2,
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  "author": {
    "name": "Ray",
    "email": "[email protected]"
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