component
CMSA055N06
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Cmos(广东场效应半导体) MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CMSA055N06
Cmos(广东场效应半导体) · MOSFETs · DFN-8(5x6)
CMSA055N06 from Cmos(广东场效应半导体), in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no separate pin-level limit, and the device is rated VDS 60 V with continuous ID 90 A at TC=25℃. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no separate pin-level limit, and the device is rated VDS 60 V with continuous ID 90 A at TC=25℃. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no separate pin-level limit, and the device is rated VDS 60 V with continuous ID 90 A at TC=25℃. |
| 4 | G | input | Gate terminal of the MOSFET; gate-source voltage is rated ±20 V (VGS) and VGS(th) is 1 to 3 V at ID=250 μA. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET; drain-source breakdown voltage is 60 V minimum (BVDSS) at VGS=0 V, ID=250 μA. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET; drain-source breakdown voltage is 60 V minimum (BVDSS) at VGS=0 V, ID=250 μA. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET; drain-source breakdown voltage is 60 V minimum (BVDSS) at VGS=0 V, ID=250 μA. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET; drain-source breakdown voltage is 60 V minimum (BVDSS) at VGS=0 V, ID=250 μA. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 90 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 66 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 360 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 156 | mJ | VDS=40V, VGS=10V, L=0.5mH, IAS=25A (per note 1) | 1 | ||
| Total Power Dissipation | PD | 100 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | 150 | ℃ | 1 | |||
| Thermal Resistance Junction-to-Ambient | RθJA | 31.3 | ℃/ W | 1 | |||
| Thermal Resistance Junction-to-Case | RθJC | 1.25 | ℃/ W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 4.1 | 5.5 | mΩ | VGS=10V, ID=28A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 6.7 | 8 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VGS=VDS, ID=250μA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=60V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Diode continuous forward current | IS | 90 | A | 2 | |||
| Diode pulse current | IS,pulse | 360 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IF=28A, Tj=25℃ | 2 |
CAD (KiCad official)
- Symbol:
CMSA055N06 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
cmsa055n06-etched.step/cmsa055n06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmsa055n06.step/cmsa055n06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256
9a1a5c2407c3f66f, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CMSA055N06
**Cmos(广东场效应半导体)** · MOSFETs · DFN-8(5x6)
CMSA055N06 from Cmos(广东场效应半导体), in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no separate pin-level limit, and the device is rated VDS 60 V with continuous ID 90 A at TC=25℃. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no separate pin-level limit, and the device is rated VDS 60 V with continuous ID 90 A at TC=25℃. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no separate pin-level limit, and the device is rated VDS 60 V with continuous ID 90 A at TC=25℃. |
| 4 | G | input | Gate terminal of the MOSFET; gate-source voltage is rated ±20 V (VGS) and VGS(th) is 1 to 3 V at ID=250 μA. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET; drain-source breakdown voltage is 60 V minimum (BVDSS) at VGS=0 V, ID=250 μA. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET; drain-source breakdown voltage is 60 V minimum (BVDSS) at VGS=0 V, ID=250 μA. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET; drain-source breakdown voltage is 60 V minimum (BVDSS) at VGS=0 V, ID=250 μA. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET; drain-source breakdown voltage is 60 V minimum (BVDSS) at VGS=0 V, ID=250 μA. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 60 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 90 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID | | | 66 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 360 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 156 | mJ | VDS=40V, VGS=10V, L=0.5mH, IAS=25A (per note 1) | 1 |
| Total Power Dissipation | PD | | | 100 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-to-Ambient | RθJA | | | 31.3 | ℃/ W | | 1 |
| Thermal Resistance Junction-to-Case | RθJC | | | 1.25 | ℃/ W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 4.1 | 5.5 | mΩ | VGS=10V, ID=28A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 6.7 | 8 | mΩ | VGS=4.5V, ID=20A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | 3 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=60V, VGS=0V | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Diode continuous forward current | IS | | | 90 | A | | 2 |
| Diode pulse current | IS,pulse | | | 360 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IF=28A, Tj=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `CMSA055N06`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `cmsa055n06-etched.step` / `cmsa055n06-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cmsa055n06.step` / `cmsa055n06.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Cmos(广东场效应半导体) datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590907408640393216) (3 pp, sha256 `9a1a5c2407c3f66f`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cmsa055n06-datasheet.pdf)