# CJU100N03

**Changjing** · MOSFETs · TO-252-2L

CJU100N03 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal; gate-source voltage is rated at ±20V (IGSS tested at VGS=±20V) with a threshold of 1.0V min to 3.0V max at ID=250µA. |
| 2 | DRAIN | passive | Drain terminal, also the exposed tab; drain-source breakdown is 30V min at ID=250µA and RDS(on) is 6.5mΩ typ at VGS=10V. |
| 3 | SOURCE | passive | Source terminal; continuous source-drain diode current is 100A with a 400A pulsed rating. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Junction temperature range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Storage temperature range | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Single pulsed avalanche energy | EAS |  |  | 100 | mJ | VDD=15V, VGS=10V, L=0.5mH, Rg=25Ω, Starting TJ=25℃ (note 3) | 1 |
| Thermal resistance junction to ambient | RθJA |  |  | 100 | ℃/W | Device mounted on 1 in² FR-4 board with 2oz copper, still air, Ta=25℃ (note 6) | 1 |
| Drain-source breakdown voltage | V(BR)DSS | 30 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Gate-body leakage current | IGSS | -100 |  | 100 | nA | VDS = 0V, VGS = ±20V | 2 |
| Gate-threshold voltage | VGS(th) | 1 | 1.7 | 3 | V | VDS = VGS, ID = 250µA | 2 |
| Static drain-source on-state resistance | RDS(on) |  |  | 6.5 | mΩ | VGS = 10V, ID = 20A | 2 |
| Static drain-source on-state resistance | RDS(on) |  |  | 9 | mΩ | VGS = 4.5V, ID = 20A | 2 |
| Zero gate voltage drain current (TJ=25℃) | IDSS |  |  | 1 | µA | VDS = 24V, VGS = 0V, TJ = 25℃ | 2 |
| Zero gate voltage drain current (TJ=125℃) | IDSS |  |  | 100 | µA | VDS = 24V, VGS = 0V, TJ = 125℃ | 2 |
| Input capacitance | Ciss |  | 2734 |  | pF | VDS = 15V, VGS = 0V, f = 1MHz | 2 |
| Output capacitance | Coss |  | 300 |  | pF | VDS = 15V, VGS = 0V, f = 1MHz | 2 |
| Reverse transfer capacitance | Crss |  | 244 |  | pF | VDS = 15V, VGS = 0V, f = 1MHz | 2 |
| Gate resistance | Rg |  | 2 |  | Ω | f = 1MHz | 2 |
| Total gate charge | Qg |  | 49 |  | nC | VDS = 15V, VGS = 10V, ID = 50A | 2 |
| Gate-source charge | Qgs |  | 8.3 |  | nC | VDS = 15V, VGS = 10V, ID = 50A | 2 |
| Gate-drain charge | Qgd |  | 10 |  | nC | VDS = 15V, VGS = 10V, ID = 50A | 2 |
| Drain-source diode forward voltage | VSD |  |  | 1.2 | V | VGS = 0V, IS = 10A | 2 |
| Continuous drain-source diode forward current | IS |  |  | 100 | A |  | 2 |
| Pulsed drain-source diode forward current | ISM |  |  | 400 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `CJU100N03`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `cju100n03-etched.step` / `cju100n03-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cju100n03.step` / `cju100n03.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Changjing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590283944643100672) (6 pp, sha256 `fa3b9c247885008e`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/cju100n03-datasheet.pdf)