component
CJU100N03
Public Made by Adomby adom
Changjing MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCJU100N03
Changjing · MOSFETs · TO-252-2L
CJU100N03 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal; gate-source voltage is rated at ±20V (IGSS tested at VGS=±20V) with a threshold of 1.0V min to 3.0V max at ID=250µA. |
| 2 | DRAIN | passive | Drain terminal, also the exposed tab; drain-source breakdown is 30V min at ID=250µA and RDS(on) is 6.5mΩ typ at VGS=10V. |
| 3 | SOURCE | passive | Source terminal; continuous source-drain diode current is 100A with a 400A pulsed rating. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Junction temperature range | TJ | -55 | 150 | ℃ | 1 | ||
| Storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Single pulsed avalanche energy | EAS | 100 | mJ | VDD=15V, VGS=10V, L=0.5mH, Rg=25Ω, Starting TJ=25℃ (note 3) | 1 | ||
| Thermal resistance junction to ambient | RθJA | 100 | ℃/W | Device mounted on 1 in² FR-4 board with 2oz copper, still air, Ta=25℃ (note 6) | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | 30 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Gate-threshold voltage | VGS(th) | 1 | 1.7 | 3 | V | VDS = VGS, ID = 250µA | 2 |
| Static drain-source on-state resistance | RDS(on) | 6.5 | mΩ | VGS = 10V, ID = 20A | 2 | ||
| Static drain-source on-state resistance | RDS(on) | 9 | mΩ | VGS = 4.5V, ID = 20A | 2 | ||
| Zero gate voltage drain current (TJ=25℃) | IDSS | 1 | µA | VDS = 24V, VGS = 0V, TJ = 25℃ | 2 | ||
| Zero gate voltage drain current (TJ=125℃) | IDSS | 100 | µA | VDS = 24V, VGS = 0V, TJ = 125℃ | 2 | ||
| Input capacitance | Ciss | 2734 | pF | VDS = 15V, VGS = 0V, f = 1MHz | 2 | ||
| Output capacitance | Coss | 300 | pF | VDS = 15V, VGS = 0V, f = 1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 244 | pF | VDS = 15V, VGS = 0V, f = 1MHz | 2 | ||
| Gate resistance | Rg | 2 | Ω | f = 1MHz | 2 | ||
| Total gate charge | Qg | 49 | nC | VDS = 15V, VGS = 10V, ID = 50A | 2 | ||
| Gate-source charge | Qgs | 8.3 | nC | VDS = 15V, VGS = 10V, ID = 50A | 2 | ||
| Gate-drain charge | Qgd | 10 | nC | VDS = 15V, VGS = 10V, ID = 50A | 2 | ||
| Drain-source diode forward voltage | VSD | 1.2 | V | VGS = 0V, IS = 10A | 2 | ||
| Continuous drain-source diode forward current | IS | 100 | A | 2 | |||
| Pulsed drain-source diode forward current | ISM | 400 | A | 2 |
CAD (KiCad official)
- Symbol:
CJU100N03 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
cju100n03-etched.step/cju100n03-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cju100n03.step/cju100n03.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (6 pp, sha256
fa3b9c247885008e, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).