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CJU100N03

Changjing · MOSFETs · TO-252-2L

CJU100N03 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal; gate-source voltage is rated at ±20V (IGSS tested at VGS=±20V) with a threshold of 1.0V min to 3.0V max at ID=250µA.
2 DRAIN passive Drain terminal, also the exposed tab; drain-source breakdown is 30V min at ID=250µA and RDS(on) is 6.5mΩ typ at VGS=10V.
3 SOURCE passive Source terminal; continuous source-drain diode current is 100A with a 400A pulsed rating.

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Junction temperature range TJ -55 150 ℃ 1
Storage temperature range Tstg -55 150 ℃ 1
Single pulsed avalanche energy EAS 100 mJ VDD=15V, VGS=10V, L=0.5mH, Rg=25Ω, Starting TJ=25℃ (note 3) 1
Thermal resistance junction to ambient RθJA 100 ℃/W Device mounted on 1 in² FR-4 board with 2oz copper, still air, Ta=25℃ (note 6) 1
Drain-source breakdown voltage V(BR)DSS 30 V VGS = 0V, ID = 250µA 2
Gate-body leakage current IGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Gate-threshold voltage VGS(th) 1 1.7 3 V VDS = VGS, ID = 250µA 2
Static drain-source on-state resistance RDS(on) 6.5 mΩ VGS = 10V, ID = 20A 2
Static drain-source on-state resistance RDS(on) 9 mΩ VGS = 4.5V, ID = 20A 2
Zero gate voltage drain current (TJ=25℃) IDSS 1 µA VDS = 24V, VGS = 0V, TJ = 25℃ 2
Zero gate voltage drain current (TJ=125℃) IDSS 100 µA VDS = 24V, VGS = 0V, TJ = 125℃ 2
Input capacitance Ciss 2734 pF VDS = 15V, VGS = 0V, f = 1MHz 2
Output capacitance Coss 300 pF VDS = 15V, VGS = 0V, f = 1MHz 2
Reverse transfer capacitance Crss 244 pF VDS = 15V, VGS = 0V, f = 1MHz 2
Gate resistance Rg 2 Ω f = 1MHz 2
Total gate charge Qg 49 nC VDS = 15V, VGS = 10V, ID = 50A 2
Gate-source charge Qgs 8.3 nC VDS = 15V, VGS = 10V, ID = 50A 2
Gate-drain charge Qgd 10 nC VDS = 15V, VGS = 10V, ID = 50A 2
Drain-source diode forward voltage VSD 1.2 V VGS = 0V, IS = 10A 2
Continuous drain-source diode forward current IS 100 A 2
Pulsed drain-source diode forward current ISM 400 A 2

CAD (KiCad official)

  • Symbol: CJU100N03
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: cju100n03-etched.step / cju100n03-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cju100n03.step / cju100n03.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (6 pp, sha256 fa3b9c247885008e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF