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Ray ci30n65sm: specified limits as data (metadata.characteristics, 16 rows from the datasheet) 7637454 20d ago
{
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  "type": "component",
  "slug": "ci30n65sm",
  "title": "CI30N65SM",
  "brief": "Tokmas Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "silicon carbide (sic) devices",
    "ci30n65sm",
    "factory-2.0.0",
    "extractor-text"
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  "component": {
    "mpn": "CI30N65SM",
    "manufacturer": "Tokmas",
    "package": "TO-247-3",
    "pin_count": 3,
    "category": "Silicon Carbide (SiC) Devices",
    "subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590234116303597568",
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      "footprint": "ci30n65sm.kicad_mod",
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      "lbr": "ci30n65sm.lbr"
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    "distributor_links": {
      "lcsc": "C3010930"
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    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate control terminal; operate at recommended -5V to +20V relative to source to modulate drain-source current."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain power terminal; rated to 650V maximum drain-source voltage with continuous current of 30A at 25°C."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source terminal serving as reference point for gate-source and drain-source voltages."
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    "provenance": {
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        "cost_usd": 0.0799,
        "at": "2026-09-21T17:12:24"
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        "pages": 5,
        "sha256": "57209089969db9ad",
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      "cad": "KiCad official (CC-BY-SA 4.0)",
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        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
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        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
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        "zmin_mm": -15.83,
        "centre_offset_mm": 0.185,
        "footprint_binding": "identity",
        "sha256": "ec0db59b04bcea2e0db6f976bf3ab8644e761c8b0059239f77f4febd6dc9eff4",
        "checked": "2026-10-07",
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        "sha256": "c032c911b2b6facf6324a959656f6e59389565956153ff524d7360b399ba4c82",
        "checked": "2026-10-07",
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  "metadata": {
    "specs": {
      "Manufacturer": "Tokmas",
      "Package": "TO-247-3",
      "Category": "Silicon Carbide (SiC) Devices",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
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      "rows": [
        {
          "name": "Drain-Source Voltage",
          "symbol": "VDSmax",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 650,
          "conditions": "VGS=0V,ID=100μA",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Gate-Source Voltage (absolute maximum)",
          "symbol": "VGSmax",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -10,
          "typ": null,
          "max": 25,
          "conditions": "Absolute maximum values",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Gate-Source Voltage (recommended operational)",
          "symbol": "VGSop",
          "kind": "recommended_operating",
          "unit": "V",
          "min": -5,
          "typ": null,
          "max": 20,
          "conditions": "Recommended operational values",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Continuous Drain Current",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 30,
          "conditions": "VGS=20V , TC=25˚C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Continuous Drain Current",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 22,
          "conditions": "VGS=20V , TC=100˚C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Power Dissipation",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 171,
          "conditions": "TC=25˚C, TJ=150˚C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Operating Junction and Storage Temperature",
          "symbol": "TJ, Tstg",
          "kind": "absolute_maximum",
          "unit": "˚C",
          "min": -55,
          "typ": null,
          "max": 175,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 650,
          "typ": null,
          "max": null,
          "conditions": "VGS=0V,ID=100μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 1.8,
          "typ": 2.3,
          "max": 3.5,
          "conditions": "VGS= VDS, IDS=5mA,TC=25˚C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 1.55,
          "typ": null,
          "max": null,
          "conditions": "VGS= VDS, IDS=5mA,TC=175˚C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": 2,
          "max": 100,
          "conditions": "VDS= 650V, VGS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-Source Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": null,
          "typ": 50,
          "max": 200,
          "conditions": "VGS=20V, VDS= 0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source On-state Resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 65,
          "max": 80,
          "conditions": "VGS=20V, ID=20A, TC=25˚C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source On-state Resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": null,
          "max": 95,
          "conditions": "VGS=20V, ID=20A, TC=175˚C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance from Junction to Case",
          "symbol": "RθJC",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": 0.73,
          "max": null,
          "conditions": "Fig. 11",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance From Junction to Ambient",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": 35,
          "max": null,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        }
      ]
    }
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  "discovery_pitch": "CI30N65SM (Tokmas) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
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  "updated_at": "2026-09-24T19:04:41.657Z"
}