component
CI30N65SM
Public Made by Adomby adom
Tokmas Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ci30n65sm: specified limits as data (metadata.characteristics, 16 rows from the datasheet)
2 files changed
+222
README.md+23@@ -21,6 +21,29 @@ CI30N65SM from Tokmas, in a TO-247-3. Pinout and pin descriptions extracted from | Category | Silicon Carbide (SiC) Devices | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDSmax | | | 650 | V | VGS=0V,ID=100μA | 1 |+| Gate-Source Voltage (absolute maximum) | VGSmax | -10 | | 25 | V | Absolute maximum values | 1 |+| Gate-Source Voltage (recommended operational) | VGSop | -5 | | 20 | V | Recommended operational values | 1 |+| Continuous Drain Current | ID | | | 30 | A | VGS=20V , TC=25˚C | 1 |+| Continuous Drain Current | ID | | | 22 | A | VGS=20V , TC=100˚C | 1 |+| Power Dissipation | PD | | | 171 | W | TC=25˚C, TJ=150˚C | 1 |+| Operating Junction and Storage Temperature | TJ, Tstg | -55 | | 175 | ˚C | | 1 |+| Drain-Source Breakdown Voltage | V(BR)DSS | 650 | | | V | VGS=0V,ID=100μA | 2 |+| Gate Threshold Voltage | VGS(th) | 1.8 | 2.3 | 3.5 | V | VGS= VDS, IDS=5mA,TC=25˚C | 2 |+| Gate Threshold Voltage | VGS(th) | 1.55 | | | V | VGS= VDS, IDS=5mA,TC=175˚C | 2 |+| Zero Gate Voltage Drain Current | IDSS | | 2 | 100 | μA | VDS= 650V, VGS=0V | 2 |+| Gate-Source Leakage Current | IGSS | | 50 | 200 | nA | VGS=20V, VDS= 0V | 2 |+| Drain-Source On-state Resistance | RDS(on) | | 65 | 80 | mΩ | VGS=20V, ID=20A, TC=25˚C | 2 |+| Drain-Source On-state Resistance | RDS(on) | | | 95 | mΩ | VGS=20V, ID=20A, TC=175˚C | 2 |+| Thermal Resistance from Junction to Case | RθJC | | 0.73 | | ℃/W | Fig. 11 | 2 |+| Thermal Resistance From Junction to Ambient | RθJA | | 35 | | ℃/W | | 2 |+ ## CAD (KiCad official) - Symbol: `CI30N65SM`
page.json+199@@ -133,6 +133,205 @@ "Package": "TO-247-3", "Category": "Silicon Carbide (SiC) Devices", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "57209089969db9ad",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSmax",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 650,+ "conditions": "VGS=0V,ID=100μA",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (absolute maximum)",+ "symbol": "VGSmax",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -10,+ "typ": null,+ "max": 25,+ "conditions": "Absolute maximum values",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (recommended operational)",+ "symbol": "VGSop",+ "kind": "recommended_operating",+ "unit": "V",+ "min": -5,+ "typ": null,+ "max": 20,+ "conditions": "Recommended operational values",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "VGS=20V , TC=25˚C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 22,+ "conditions": "VGS=20V , TC=100˚C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 171,+ "conditions": "TC=25˚C, TJ=150˚C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "˚C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 650,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V,ID=100μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.8,+ "typ": 2.3,+ "max": 3.5,+ "conditions": "VGS= VDS, IDS=5mA,TC=25˚C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.55,+ "typ": null,+ "max": null,+ "conditions": "VGS= VDS, IDS=5mA,TC=175˚C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": 2,+ "max": 100,+ "conditions": "VDS= 650V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": 50,+ "max": 200,+ "conditions": "VGS=20V, VDS= 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-state Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 65,+ "max": 80,+ "conditions": "VGS=20V, ID=20A, TC=25˚C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-state Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 95,+ "conditions": "VGS=20V, ID=20A, TC=175˚C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance from Junction to Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 0.73,+ "max": null,+ "conditions": "Fig. 11",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance From Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 35,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],