component
CI30N65SM
Public Made by Adomby adom
Tokmas Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCI30N65SM
Tokmas · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3
CI30N65SM from Tokmas, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate control terminal; operate at recommended -5V to +20V relative to source to modulate drain-source current. |
| 2 | D | passive | Drain power terminal; rated to 650V maximum drain-source voltage with continuous current of 30A at 25°C. |
| 3 | S | passive | Source terminal serving as reference point for gate-source and drain-source voltages. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tokmas |
| Package | TO-247-3 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSmax | 650 | V | VGS=0V,ID=100μA | 1 | ||
| Gate-Source Voltage (absolute maximum) | VGSmax | -10 | 25 | V | Absolute maximum values | 1 | |
| Gate-Source Voltage (recommended operational) | VGSop | -5 | 20 | V | Recommended operational values | 1 | |
| Continuous Drain Current | ID | 30 | A | VGS=20V , TC=25˚C | 1 | ||
| Continuous Drain Current | ID | 22 | A | VGS=20V , TC=100˚C | 1 | ||
| Power Dissipation | PD | 171 | W | TC=25˚C, TJ=150˚C | 1 | ||
| Operating Junction and Storage Temperature | TJ, Tstg | -55 | 175 | ˚C | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 650 | V | VGS=0V,ID=100μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.3 | 3.5 | V | VGS= VDS, IDS=5mA,TC=25˚C | 2 |
| Gate Threshold Voltage | VGS(th) | 1.55 | V | VGS= VDS, IDS=5mA,TC=175˚C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 2 | 100 | μA | VDS= 650V, VGS=0V | 2 | |
| Gate-Source Leakage Current | IGSS | 50 | 200 | nA | VGS=20V, VDS= 0V | 2 | |
| Drain-Source On-state Resistance | RDS(on) | 65 | 80 | mΩ | VGS=20V, ID=20A, TC=25˚C | 2 | |
| Drain-Source On-state Resistance | RDS(on) | 95 | mΩ | VGS=20V, ID=20A, TC=175˚C | 2 | ||
| Thermal Resistance from Junction to Case | RθJC | 0.73 | ℃/W | Fig. 11 | 2 | ||
| Thermal Resistance From Junction to Ambient | RθJA | 35 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
CI30N65SM - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
ci30n65sm-etched.step/ci30n65sm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ci30n65sm.step/ci30n65sm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tokmas datasheet (5 pp, sha256
57209089969db9ad, retrieved 2026-09-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-4-6(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).