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Contents

README

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CI30N65SM

Tokmas · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3

CI30N65SM from Tokmas, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate control terminal; operate at recommended -5V to +20V relative to source to modulate drain-source current.
2 D passive Drain power terminal; rated to 650V maximum drain-source voltage with continuous current of 30A at 25°C.
3 S passive Source terminal serving as reference point for gate-source and drain-source voltages.

Key specifications

Parameter Value
Manufacturer Tokmas
Package TO-247-3
Category Silicon Carbide (SiC) Devices
Pins 3

CAD (KiCad official)

  • Symbol: CI30N65SM
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ci30n65sm-etched.step / ci30n65sm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ci30n65sm.step / ci30n65sm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tokmas datasheet (5 pp, sha256 57209089969db9ad, retrieved 2026-09-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF