# BTB16Q-600BW

**FUXINSEMI** · Thyristors (SCR)/Modules · TO-263

BTB16Q-600BW from FUXINSEMI, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Main terminal 1 (A1) of the triac, the lead on the circuit diagram's lower terminal; the part is rated for IT(RMS) 16 A and VDRM/VRRM 600 V (600BW). |
| 2 | A2 | passive | Main terminal 2 (A2), connected to the uninsulated mounting tab; the middle lead is absent from the package, and the part is rated for IT(RMS) 16 A and VDRM/VRRM 600 V. |
| 3 | G | input | Gate trigger input; IGT is at most 50 mA (BW grade) and VGT is at most 1.3 V in quadrants I-II-III at VD=12 V, RL=33 Ω, and peak gate current IGM is 4 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | FUXINSEMI |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate trigger current | IGT |  |  | 50 | mA | VD =12V RL = 33Ω Tj =25℃, Ⅰ-Ⅱ-Ⅲ | 2 |
| Gate trigger voltage | VGT |  |  | 1.3 | V | Ⅰ-Ⅱ-Ⅲ | 2 |
| Gate non-trigger voltage | VGD | 0.2 |  |  | V | VD =VDRM Tj =125℃ | 2 |
| Latching current (Ⅰ-Ⅲ) | IL |  |  | 70 | mA | IG =1.2IGT, Ⅰ-Ⅲ | 2 |
| Latching current (Ⅱ) | IL |  |  | 80 | mA | IG =1.2IGT, Ⅱ | 2 |
| Holding current | IH |  |  | 50 | mA | IT =500mA | 2 |
| Critical-rate of rise of commutation voltage | dVD/dt | 1000 |  |  | V/μs | VD=2/3VDRM Gate Open Tj =125℃ | 2 |
| Forward on voltage | VTM |  |  | 1.55 | V | ITM =23A tp=380μs | 2 |
| Repetitive Peak Off-State Current | IDRM |  |  | 5 | μA | VD =VDRM VR =VRRM Tj=25℃ | 2 |
| Repetitive Peak Reverse Current | IRRM |  |  | 1 | mA | Tj=125℃ | 2 |
| Repetitive peak off-state voltage | VDRM |  |  | 600 | V |  | 2 |
| Repetitive peak reverse voltage | VRRM |  |  | 600 | V |  | 2 |
| RMS on-state current | IT(RMS) |  |  | 16 | A |  | 2 |
| Non repetitive surge peak on-state current | ITSM |  |  | 160 | A | full cycle, F=50Hz | 2 |
| I2t value for fusing | I2t |  |  | 140 | A2s | tp=10ms | 2 |
| Critical rate of rise of on-state current | dIT/dt |  |  | 50 | A/μs | IG =2×IGT, Ⅰ-Ⅱ-Ⅲ | 2 |
| Peak gate current | IGM |  |  | 4 | A |  | 2 |
| Average gate power dissipation | PG(AV) |  |  | 1 | W |  | 2 |
| Junction temperature | TJ | -40 |  | 125 | ℃ |  | 2 |
| Storage temperature | TSTG | -40 |  | 150 | ℃ |  | 2 |
| Thermal resistance junction to case (AC) | Rth(j-c) |  |  | 1.2 | ℃/W |  | 2 |
| Thermal resistance junction to ambient | Rth(j-a) |  |  | 45 | ℃/W |  | 2 |

## CAD (KiCad official)

- Symbol: `BTB16Q-600BW`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `btb16q-600bw-etched.step` / `btb16q-600bw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `btb16q-600bw.step` / `btb16q-600bw.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [FUXINSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588918030382743552) (4 pp, sha256 `2e4427fe4a8f79e0`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/btb16q-600bw-datasheet.pdf)