component
BTB16Q-600BW
Public Made by Adomby adom
FUXINSEMI Thyristors (SCR)/Modules, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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btb16q-600bw: specified limits as data (metadata.characteristics, 22 rows from the datasheet)
2 files changed
+301−1
README.md+29@@ -21,6 +21,35 @@ BTB16Q-600BW from FUXINSEMI, in a TO-263. Pinout and pin descriptions extracted | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate trigger current | IGT | | | 50 | mA | VD =12V RL = 33Ω Tj =25℃, Ⅰ-Ⅱ-Ⅲ | 2 |+| Gate trigger voltage | VGT | | | 1.3 | V | Ⅰ-Ⅱ-Ⅲ | 2 |+| Gate non-trigger voltage | VGD | 0.2 | | | V | VD =VDRM Tj =125℃ | 2 |+| Latching current (Ⅰ-Ⅲ) | IL | | | 70 | mA | IG =1.2IGT, Ⅰ-Ⅲ | 2 |+| Latching current (Ⅱ) | IL | | | 80 | mA | IG =1.2IGT, Ⅱ | 2 |+| Holding current | IH | | | 50 | mA | IT =500mA | 2 |+| Critical-rate of rise of commutation voltage | dVD/dt | 1000 | | | V/μs | VD=2/3VDRM Gate Open Tj =125℃ | 2 |+| Forward on voltage | VTM | | | 1.55 | V | ITM =23A tp=380μs | 2 |+| Repetitive Peak Off-State Current | IDRM | | | 5 | μA | VD =VDRM VR =VRRM Tj=25℃ | 2 |+| Repetitive Peak Reverse Current | IRRM | | | 1 | mA | Tj=125℃ | 2 |+| Repetitive peak off-state voltage | VDRM | | | 600 | V | | 2 |+| Repetitive peak reverse voltage | VRRM | | | 600 | V | | 2 |+| RMS on-state current | IT(RMS) | | | 16 | A | | 2 |+| Non repetitive surge peak on-state current | ITSM | | | 160 | A | full cycle, F=50Hz | 2 |+| I2t value for fusing | I2t | | | 140 | A2s | tp=10ms | 2 |+| Critical rate of rise of on-state current | dIT/dt | | | 50 | A/μs | IG =2×IGT, Ⅰ-Ⅱ-Ⅲ | 2 |+| Peak gate current | IGM | | | 4 | A | | 2 |+| Average gate power dissipation | PG(AV) | | | 1 | W | | 2 |+| Junction temperature | TJ | -40 | | 125 | ℃ | | 2 |+| Storage temperature | TSTG | -40 | | 150 | ℃ | | 2 |+| Thermal resistance junction to case (AC) | Rth(j-c) | | | 1.2 | ℃/W | | 2 |+| Thermal resistance junction to ambient | Rth(j-a) | | | 45 | ℃/W | | 2 |+ ## CAD (KiCad official) - Symbol: `BTB16Q-600BW`
page.json+272−1@@ -148,6 +148,277 @@ "Package": "TO-263", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "2e4427fe4a8f79e0",+ "rows": [+ {+ "name": "Gate trigger current",+ "symbol": "IGT",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VD =12V RL = 33Ω Tj =25℃, Ⅰ-Ⅱ-Ⅲ",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger voltage",+ "symbol": "VGT",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "Ⅰ-Ⅱ-Ⅲ",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate non-trigger voltage",+ "symbol": "VGD",+ "kind": "electrical",+ "unit": "V",+ "min": 0.2,+ "typ": null,+ "max": null,+ "conditions": "VD =VDRM Tj =125℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Latching current (Ⅰ-Ⅲ)",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 70,+ "conditions": "IG =1.2IGT, Ⅰ-Ⅲ",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Latching current (Ⅱ)",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "IG =1.2IGT, Ⅱ",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Holding current",+ "symbol": "IH",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "IT =500mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical-rate of rise of commutation voltage",+ "symbol": "dVD/dt",+ "kind": "electrical",+ "unit": "V/μs",+ "min": 1000,+ "typ": null,+ "max": null,+ "conditions": "VD=2/3VDRM Gate Open Tj =125℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward on voltage",+ "symbol": "VTM",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.55,+ "conditions": "ITM =23A tp=380μs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive Peak Off-State Current",+ "symbol": "IDRM",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VD =VDRM VR =VRRM Tj=25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive Peak Reverse Current",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "Tj=125℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak off-state voltage",+ "symbol": "VDRM",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 600,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak reverse voltage",+ "symbol": "VRRM",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 600,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "RMS on-state current",+ "symbol": "IT(RMS)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak on-state current",+ "symbol": "ITSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 160,+ "conditions": "full cycle, F=50Hz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "I2t value for fusing",+ "symbol": "I2t",+ "kind": "absolute_maximum",+ "unit": "A2s",+ "min": null,+ "typ": null,+ "max": 140,+ "conditions": "tp=10ms",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of on-state current",+ "symbol": "dIT/dt",+ "kind": "absolute_maximum",+ "unit": "A/μs",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "IG =2×IGT, Ⅰ-Ⅱ-Ⅲ",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak gate current",+ "symbol": "IGM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Average gate power dissipation",+ "symbol": "PG(AV)",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -40,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -40,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction to case (AC)",+ "symbol": "Rth(j-c)",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction to ambient",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 45,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +460,4 @@ "visibility": { "public": true }-}+}