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BTB16Q-600BW

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FUXINSEMI Thyristors (SCR)/Modules, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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BTB16Q-600BW

FUXINSEMI · Thyristors (SCR)/Modules · TO-263

BTB16Q-600BW from FUXINSEMI, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Main terminal 1 (A1) of the triac, the lead on the circuit diagram's lower terminal; the part is rated for IT(RMS) 16 A and VDRM/VRRM 600 V (600BW).
2 A2 passive Main terminal 2 (A2), connected to the uninsulated mounting tab; the middle lead is absent from the package, and the part is rated for IT(RMS) 16 A and VDRM/VRRM 600 V.
3 G input Gate trigger input; IGT is at most 50 mA (BW grade) and VGT is at most 1.3 V in quadrants I-II-III at VD=12 V, RL=33 Ω, and peak gate current IGM is 4 A.

Key specifications

Parameter Value
Manufacturer FUXINSEMI
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate trigger current IGT 50 mA VD =12V RL = 33Ω Tj =25℃, Ⅰ-Ⅱ-Ⅲ 2
Gate trigger voltage VGT 1.3 V Ⅰ-Ⅱ-Ⅲ 2
Gate non-trigger voltage VGD 0.2 V VD =VDRM Tj =125℃ 2
Latching current (Ⅰ-Ⅲ) IL 70 mA IG =1.2IGT, Ⅰ-Ⅲ 2
Latching current (Ⅱ) IL 80 mA IG =1.2IGT, Ⅱ 2
Holding current IH 50 mA IT =500mA 2
Critical-rate of rise of commutation voltage dVD/dt 1000 V/μs VD=2/3VDRM Gate Open Tj =125℃ 2
Forward on voltage VTM 1.55 V ITM =23A tp=380μs 2
Repetitive Peak Off-State Current IDRM 5 μA VD =VDRM VR =VRRM Tj=25℃ 2
Repetitive Peak Reverse Current IRRM 1 mA Tj=125℃ 2
Repetitive peak off-state voltage VDRM 600 V 2
Repetitive peak reverse voltage VRRM 600 V 2
RMS on-state current IT(RMS) 16 A 2
Non repetitive surge peak on-state current ITSM 160 A full cycle, F=50Hz 2
I2t value for fusing I2t 140 A2s tp=10ms 2
Critical rate of rise of on-state current dIT/dt 50 A/μs IG =2×IGT, Ⅰ-Ⅱ-Ⅲ 2
Peak gate current IGM 4 A 2
Average gate power dissipation PG(AV) 1 W 2
Junction temperature TJ -40 125 ℃ 2
Storage temperature TSTG -40 150 ℃ 2
Thermal resistance junction to case (AC) Rth(j-c) 1.2 ℃/W 2
Thermal resistance junction to ambient Rth(j-a) 45 ℃/W 2

CAD (KiCad official)

  • Symbol: BTB16Q-600BW
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: btb16q-600bw-etched.step / btb16q-600bw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); btb16q-600bw.step / btb16q-600bw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FUXINSEMI datasheet (4 pp, sha256 2e4427fe4a8f79e0, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF