# BSS83PH6327

**Infineon Technologies** · MOSFETs · SOT-23

BSS83PH6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal for control signal with maximum gate-source voltage ±20 V and threshold voltage between -1 and -2 V (at VGS = VDS, ID = -80 µA). |
| 2 | S | passive | Source terminal with internal reverse diode rated for continuous forward current -0.33 A and inverse diode forward voltage -0.84 to -1.1 V. |
| 3 | D | passive | Drain terminal with maximum drain-source voltage -60 V and continuous drain current -0.33 A (at TA = 25°C). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current, TA = 25 °C | ID |  |  | -0.33 | A | TA = 25 °C | 1 |
| Continuous drain current, TA = 70 °C | ID |  |  | -0.27 | A | TA = 70 °C | 1 |
| Pulsed drain current, TA = 25 °C | ID puls |  |  | -1.32 | A | TA = 25 °C | 1 |
| Avalanche energy, single pulse | EAS |  |  | 9.5 | mJ | ID = -0.33 A, VDD = -25 V, RGS = 25 W | 1 |
| Avalanche energy, periodic limited by Tjmax | EAR |  |  | 0.036 |  | limited by Tjmax | 1 |
| Reverse diode dv/dt | dv/dt |  |  | 6 | kV/µs | IS = -0.33 A, VDS = -48 V, di/dt = 200 A/µs, Tjmax = 150 °C | 1 |
| Gate source voltage | VGS | -20 |  | 20 | V |  | 1 |
| Power dissipation, TA = 25 °C | Ptot |  |  | 0.36 | W | TA = 25 °C | 1 |
| Operating and storage temperature | Tj, Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal resistance, junction - soldering point (Pin 3) | RthJS |  |  | 150 | K/W |  | 2 |
| Thermal resistance, junction - ambient, SMD on PCB @ min. footprint | RthJA |  |  | 350 | K/W | SMD version, device on PCB, @ min. footprint | 2 |
| Thermal resistance, junction - ambient, SMD on PCB @ 6 cm2 cooling area | RthJA |  |  | 300 | K/W | SMD version, device on PCB, @ 6 cm2 cooling area | 2 |
| Drain-source breakdown voltage | V(BR)DSS | -60 |  |  | V | VGS = 0 V, ID = -250 µA | 2 |
| Gate threshold voltage | VGS(th) | -1 | -1.5 | -2 | V | VGS = VDS, ID = -80 µA | 2 |
| Zero gate voltage drain current, Tj = 25 °C | IDSS |  | -0.1 | -1 | µA | VDS = -60 V, VGS = 0 V, Tj = 25 °C | 2 |
| Zero gate voltage drain current, Tj = 125 °C | IDSS |  | -10 | -100 | µA | VDS = -60 V, VGS = 0 V, Tj = 125 °C | 2 |
| Gate-source leakage current | IGSS |  | -10 | -100 | nA | VGS = -20 V, VDS = 0 V | 2 |
| Drain-source on-state resistance | RDS(on) |  | 2 | 3 | W | VGS = -4.5 V, ID = -0.27 A | 2 |
| Drain-source on-state resistance | RDS(on) |  | 1.4 | 2 | W | VGS = -10 V, ID = -0.33 A | 2 |
| Transconductance | gfs | 0.24 | 0.47 |  | S | VDS>=2*ID*RDS(on)max, ID = -0.27 A | 3 |
| Input capacitance | Ciss |  | 62 | 78 | pF | VGS = 0 V, VDS = -25 V, f = 1 MHz | 3 |
| Output capacitance | Coss |  | 19 | 24 | pF | VGS = 0 V, VDS = -25 V, f = 1 MHz | 3 |
| Reverse transfer capacitance | Crss |  | 7 | 9 | pF | VGS = 0 V, VDS = -25 V, f = 1 MHz | 3 |
| Turn-on delay time | td(on) |  | 23 | 35 | ns | VDD = -30 V, VGS = -4.5 V, ID = -0.27 A, RG = 43 W | 3 |
| Rise time | tr |  | 71 | 106 | ns | VDD = -30 V, VGS = -4.5 V, ID = -0.27 A, RG = 43 W | 3 |
| Turn-off delay time | td(off) |  | 56 | 70 | ns | VDD = -30 V, VGS = -4.5 V, ID = -0.27 A, RG = 43 W | 3 |
| Fall time | tf |  | 61 | 76 | ns | VDD = -30 V, VGS = -4.5 V, ID = -0.27 A, RG = 43 W | 3 |
| Gate to source charge | Qgs |  | 0.12 | 0.18 | nC | VDD = -48 V, ID = -0.33 A | 4 |
| Gate to drain charge | Qgd |  | 1.1 | 1.65 | nC | VDD = -48 V, ID = -0.33 A | 4 |
| Gate charge total | Qg |  | 2.38 | 3.57 | nC | VDD = -48 V, ID = -0.33 A, VGS = 0 to -10 V | 4 |
| Inverse diode continuous forward current, TA = 25 °C | IS |  |  | -0.33 | A | TA = 25 °C | 4 |
| Inverse diode direct current, pulsed, TA = 25 °C | ISM |  |  | -1.32 | A | TA = 25 °C | 4 |
| Inverse diode forward voltage | VSD |  | -0.84 | -1.1 | V | VGS = 0 V, IF = -0.33 | 4 |
| Reverse recovery time | trr |  | 59.4 | 89 | ns | VR = -30 V, IF = IS, diF/dt = 80 A/µs | 4 |
| Reverse recovery charge | Qrr |  | 37.5 | 56 | nC | VR = -30 V, IF = IS, diF/dt = 80 A/µs | 4 |
| Gate plateau voltage | V(plateau) |  | -2.94 |  | V | VDD = -48 V, ID = -0.33 A | 4 |

## CAD (KiCad official)

- Symbol: `BSS83PH6327`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bss83ph6327-etched.step` / `bss83ph6327-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bss83ph6327.step` / `bss83ph6327.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588954671637938176) (10 pp, sha256 `96d66c574916a32d`, retrieved 2026-09-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-4-6` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bss83ph6327-datasheet.pdf)