component
BSS83PH6327
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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bss83ph6327: specified limits as data (metadata.characteristics, 36 rows from the datasheet)
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+482
README.md+43@@ -21,6 +21,49 @@ BSS83PH6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Continuous drain current, TA = 25 °C | ID | | | -0.33 | A | TA = 25 °C | 1 |+| Continuous drain current, TA = 70 °C | ID | | | -0.27 | A | TA = 70 °C | 1 |+| Pulsed drain current, TA = 25 °C | ID puls | | | -1.32 | A | TA = 25 °C | 1 |+| Avalanche energy, single pulse | EAS | | | 9.5 | mJ | ID = -0.33 A, VDD = -25 V, RGS = 25 W | 1 |+| Avalanche energy, periodic limited by Tjmax | EAR | | | 0.036 | | limited by Tjmax | 1 |+| Reverse diode dv/dt | dv/dt | | | 6 | kV/µs | IS = -0.33 A, VDS = -48 V, di/dt = 200 A/µs, Tjmax = 150 °C | 1 |+| Gate source voltage | VGS | -20 | | 20 | V | | 1 |+| Power dissipation, TA = 25 °C | Ptot | | | 0.36 | W | TA = 25 °C | 1 |+| Operating and storage temperature | Tj, Tstg | -55 | | 150 | °C | | 1 |+| Thermal resistance, junction - soldering point (Pin 3) | RthJS | | | 150 | K/W | | 2 |+| Thermal resistance, junction - ambient, SMD on PCB @ min. footprint | RthJA | | | 350 | K/W | SMD version, device on PCB, @ min. footprint | 2 |+| Thermal resistance, junction - ambient, SMD on PCB @ 6 cm2 cooling area | RthJA | | | 300 | K/W | SMD version, device on PCB, @ 6 cm2 cooling area | 2 |+| Drain-source breakdown voltage | V(BR)DSS | -60 | | | V | VGS = 0 V, ID = -250 µA | 2 |+| Gate threshold voltage | VGS(th) | -1 | -1.5 | -2 | V | VGS = VDS, ID = -80 µA | 2 |+| Zero gate voltage drain current, Tj = 25 °C | IDSS | | -0.1 | -1 | µA | VDS = -60 V, VGS = 0 V, Tj = 25 °C | 2 |+| Zero gate voltage drain current, Tj = 125 °C | IDSS | | -10 | -100 | µA | VDS = -60 V, VGS = 0 V, Tj = 125 °C | 2 |+| Gate-source leakage current | IGSS | | -10 | -100 | nA | VGS = -20 V, VDS = 0 V | 2 |+| Drain-source on-state resistance | RDS(on) | | 2 | 3 | W | VGS = -4.5 V, ID = -0.27 A | 2 |+| Drain-source on-state resistance | RDS(on) | | 1.4 | 2 | W | VGS = -10 V, ID = -0.33 A | 2 |+| Transconductance | gfs | 0.24 | 0.47 | | S | VDS>=2*ID*RDS(on)max, ID = -0.27 A | 3 |+| Input capacitance | Ciss | | 62 | 78 | pF | VGS = 0 V, VDS = -25 V, f = 1 MHz | 3 |+| Output capacitance | Coss | | 19 | 24 | pF | VGS = 0 V, VDS = -25 V, f = 1 MHz | 3 |+| Reverse transfer capacitance | Crss | | 7 | 9 | pF | VGS = 0 V, VDS = -25 V, f = 1 MHz | 3 |+| Turn-on delay time | td(on) | | 23 | 35 | ns | VDD = -30 V, VGS = -4.5 V, ID = -0.27 A, RG = 43 W | 3 |+| Rise time | tr | | 71 | 106 | ns | VDD = -30 V, VGS = -4.5 V, ID = -0.27 A, RG = 43 W | 3 |+| Turn-off delay time | td(off) | | 56 | 70 | ns | VDD = -30 V, VGS = -4.5 V, ID = -0.27 A, RG = 43 W | 3 |+| Fall time | tf | | 61 | 76 | ns | VDD = -30 V, VGS = -4.5 V, ID = -0.27 A, RG = 43 W | 3 |+| Gate to source charge | Qgs | | 0.12 | 0.18 | nC | VDD = -48 V, ID = -0.33 A | 4 |+| Gate to drain charge | Qgd | | 1.1 | 1.65 | nC | VDD = -48 V, ID = -0.33 A | 4 |+| Gate charge total | Qg | | 2.38 | 3.57 | nC | VDD = -48 V, ID = -0.33 A, VGS = 0 to -10 V | 4 |+| Inverse diode continuous forward current, TA = 25 °C | IS | | | -0.33 | A | TA = 25 °C | 4 |+| Inverse diode direct current, pulsed, TA = 25 °C | ISM | | | -1.32 | A | TA = 25 °C | 4 |+| Inverse diode forward voltage | VSD | | -0.84 | -1.1 | V | VGS = 0 V, IF = -0.33 | 4 |+| Reverse recovery time | trr | | 59.4 | 89 | ns | VR = -30 V, IF = IS, diF/dt = 80 A/µs | 4 |+| Reverse recovery charge | Qrr | | 37.5 | 56 | nC | VR = -30 V, IF = IS, diF/dt = 80 A/µs | 4 |+| Gate plateau voltage | V(plateau) | | -2.94 | | V | VDD = -48 V, ID = -0.33 A | 4 |+ ## CAD (KiCad official) - Symbol: `BSS83PH6327`
page.json+439@@ -133,6 +133,445 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "96d66c574916a32d",+ "rows": [+ {+ "name": "Continuous drain current, TA = 25 °C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -0.33,+ "conditions": "TA = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current, TA = 70 °C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -0.27,+ "conditions": "TA = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current, TA = 25 °C",+ "symbol": "ID puls",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -1.32,+ "conditions": "TA = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche energy, single pulse",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 9.5,+ "conditions": "ID = -0.33 A, VDD = -25 V, RGS = 25 W",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche energy, periodic limited by Tjmax",+ "symbol": "EAR",+ "kind": "absolute_maximum",+ "unit": "",+ "min": null,+ "typ": null,+ "max": 0.036,+ "conditions": "limited by Tjmax",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Reverse diode dv/dt",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "kV/µs",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "IS = -0.33 A, VDS = -48 V, di/dt = 200 A/µs, Tjmax = 150 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation, TA = 25 °C",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.36,+ "conditions": "TA = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating and storage temperature",+ "symbol": "Tj, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction - soldering point (Pin 3)",+ "symbol": "RthJS",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction - ambient, SMD on PCB @ min. footprint",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 350,+ "conditions": "SMD version, device on PCB, @ min. footprint",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction - ambient, SMD on PCB @ 6 cm2 cooling area",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "SMD version, device on PCB, @ 6 cm2 cooling area",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": -60,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = -250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": -1.5,+ "max": -2,+ "conditions": "VGS = VDS, ID = -80 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current, Tj = 25 °C",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": -0.1,+ "max": -1,+ "conditions": "VDS = -60 V, VGS = 0 V, Tj = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current, Tj = 125 °C",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": -10,+ "max": -100,+ "conditions": "VDS = -60 V, VGS = 0 V, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": -10,+ "max": -100,+ "conditions": "VGS = -20 V, VDS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "W",+ "min": null,+ "typ": 2,+ "max": 3,+ "conditions": "VGS = -4.5 V, ID = -0.27 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "W",+ "min": null,+ "typ": 1.4,+ "max": 2,+ "conditions": "VGS = -10 V, ID = -0.33 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": 0.24,+ "typ": 0.47,+ "max": null,+ "conditions": "VDS>=2*ID*RDS(on)max, ID = -0.27 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 62,+ "max": 78,+ "conditions": "VGS = 0 V, VDS = -25 V, f = 1 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 19,+ "max": 24,+ "conditions": "VGS = 0 V, VDS = -25 V, f = 1 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 7,+ "max": 9,+ "conditions": "VGS = 0 V, VDS = -25 V, f = 1 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "td(on)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 23,+ "max": 35,+ "conditions": "VDD = -30 V, VGS = -4.5 V, ID = -0.27 A, RG = 43 W",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Rise time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 71,+ "max": 106,+ "conditions": "VDD = -30 V, VGS = -4.5 V, ID = -0.27 A, RG = 43 W",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time",+ "symbol": "td(off)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 56,+ "max": 70,+ "conditions": "VDD = -30 V, VGS = -4.5 V, ID = -0.27 A, RG = 43 W",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Fall time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 61,+ "max": 76,+ "conditions": "VDD = -30 V, VGS = -4.5 V, ID = -0.27 A, RG = 43 W",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate to source charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 0.12,+ "max": 0.18,+ "conditions": "VDD = -48 V, ID = -0.33 A",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate to drain charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 1.1,+ "max": 1.65,+ "conditions": "VDD = -48 V, ID = -0.33 A",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate charge total",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.38,+ "max": 3.57,+ "conditions": "VDD = -48 V, ID = -0.33 A, VGS = 0 to -10 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Inverse diode continuous forward current, TA = 25 °C",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -0.33,+ "conditions": "TA = 25 °C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Inverse diode direct current, pulsed, TA = 25 °C",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -1.32,+ "conditions": "TA = 25 °C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Inverse diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.84,+ "max": -1.1,+ "conditions": "VGS = 0 V, IF = -0.33",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 59.4,+ "max": 89,+ "conditions": "VR = -30 V, IF = IS, diF/dt = 80 A/µs",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 37.5,+ "max": 56,+ "conditions": "VR = -30 V, IF = IS, diF/dt = 80 A/µs",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate plateau voltage",+ "symbol": "V(plateau)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -2.94,+ "max": null,+ "conditions": "VDD = -48 V, ID = -0.33 A",+ "source_page": 4,+ "source": "datasheet"+ }+ ] } }, "variants": [],